Kokusai Electric Corporation

Hitachi-Kokusai Electric Inc.

Koei Kuribayashi

Takafumi Sasaki

Arito Ogawa

Takeo Hanashima

Shinya Ebata

Sadao Nakashima

Yoshinori Imai

Tomoshi Taniyama

Tsukasa Kamakura

Kenji Kameda

Takatomo Yamaguchi

Atsuro Seino

Naoya Miyashita

Hiroto Yamagishi

Shuhei Saido

Takaaki Noda

Norikazu Mizuno

Hiroaki Hiramatsu

Takuya Joda

Masaya Nagato

Sadao Hisakado

Hiroki Hatta

Shin Sone

Daigo Yamaguchi

Shogo Hayasaka

Hiroyuki Miyagishi

Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.

Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium

There is provided a technique that includes: (a) supplying a molybdenum-containing gas containing molybdenum and oxygen to a substrate in a process chamber; (b) supplying an additive gas containing hydrogen to the substrate; and (c) supplying a reducing gas containing hydrogen and having a chemical composition different from that of the additive gas to the substrate, wherein at least two of (a), (b), and (c) are performed simultaneously or to partially overlap with each other in time one or more times or (a), (b), and (c) are performed sequentially one or more times to form a molybdenum film on the substrate.

Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

There is provided a technique that includes a reaction vessel including a first region in which a substrate is arranged and a second region in which no substrate is arranged; a heater configured to heat the first region; a gas supplier configured to supply a plurality of gases including cleaning gases; and a controller that controls at least one selected from the group of the gas supplier, the heater, and a cooler to clean the first region and the second region under different conditions by at least one method selected from the group of a method in which the gas supplier supplies two different kinds of cleaning gases, a method in which the gas supplier supplies one or more cleaning gases from two different locations, and a method in which the heater sets a temperature differently between the first region and the second region.

Apparatus and method for cleaning reaction vessel for processing substrate

There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

Cleaning method, method of manufacturing semiconductor device, and substrate processing apparatus

There is provided a technique that cleans a member in a process container by performing a cycle a predetermined number of times, the cycle including: (a) separately supplying a cleaning gas and an additive gas that reacts with the cleaning gas, respectively, from any two supply parts among at least three supply parts into the process container after processing a substrate; and (b) separately supplying the cleaning gas and the additive gas, respectively, from any two supply parts among the at least three supply parts into the process container, wherein at least one selected from the group of the cleaning gas and the additive gas is supplied from different supply parts in (a) and (b).

Method of cleaning member in process container, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique of cleaning an interior of a supply part by performing a cycle a predetermined number of times, the cycle including: (a) supplying a first gas, which is one of a cleaning gas and an additive gas that reacts with the cleaning gas, from the supply part toward an interior of a process container in which a substrate has been processed by supplying a processing gas from the supply part to the substrate; and (b) supplying a second gas, which is the other one of the cleaning gas and the additive gas and is different from the first gas, from the supply part toward the interior of the process container in a state in which a part of the first gas remains in the supply part after supply of the first gas is stopped.

Method of cleaning, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

There is provided a technique that includes forming a film on at least one substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) performing a first set a number of times, the first set including non-simultaneously performing: supplying a precursor to the at least one substrate from at least one first ejecting hole of a first nozzle arranged along a substrate arrangement direction of a substrate arrangement region where the at least one substrate is arranged; and supplying a reactant to the at least one substrate; and (b) performing a second set a number of times, the second set including non-simultaneously performing: supplying the precursor to the at least one substrate from at least one second ejecting hole of a second nozzle arranged along the substrate arrangement direction of the substrate arrangement region; and supplying the reactant to the at least one substrate.

Method of processing substrate, substrate processing apparatus, recording medium, and method of manufacturing semiconductor device

Method of manufacturing semiconductor device, recording medium, and substrate processing apparatus

There is provided a technique that includes: (a) providing a substrate having a film containing a predetermined element, oxygen and carbon formed on a surface of the substrate; and (b) modifying at least a surface of the film by supplying a carbon-free fluorine-based gas to the substrate under a condition in which etching of the film does not occur.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

A cleaning method includes: removing deposits adhered to an inside of a processing vessel by forming a film on a substrate in the processing vessel, and thereafter, supplying a cleaning gas into the processing vessel, wherein the removing the deposits includes: a first step of supplying the cleaning gas into the processing vessel at a first flow rate when a temperature of a connection portion connecting an exhaust pipe that exhausts the interior of the processing vessel and the processing vessel is lower than a first temperature; and a second step of supplying the cleaning gas to the processing vessel while gradually decreasing the flow rate of the cleaning gas from the first flow rate to a second flow rate lower than the first flow rate when the temperature of the connection portion reaches a first temperature.

Cleaning method, method of manufacturing semiconductor device and substrate processing apparatus

A technique for improving cleaning efficiency after a film forming process is performed is provided. Provided is a method of cleaning a processing chamber after a formation of a film on a substrate, the method including: (a) supplying a gas containing hydrogen and fluorine into the processing chamber heated to a first temperature; (b) elevating an inner temperature of the processing chamber to a second temperature higher than the first temperature; and (c) supplying a gas containing fluorine into the processing chamber heated to the second temperature, wherein the first temperature is a temperature whereat the gas containing fluorine is not activated, and the second temperature is a temperature whereat the gas containing fluorine is activated.

Cleaning method and method of manufacturing semiconductor device

The method of the present invention is related to a technique of efficiently purging source gases remaining on a substrate and improving in-plane uniformity of a substrate. The method of the present invention includes forming a thin film on a substrate accommodated in a process chamber by (a) supplying a source gas into the process chamber, and (b) supplying an inert gas into the process chamber while alternately increasing and decreasing a flow rate of the inert gas supplied into the process chamber and exhausting the source gas and the inert gas from the process chamber.

Method of manufacturing semiconductor device by alternatively increasing and decreasing pressure of process chamber

A method of manufacturing a semiconductor device by using a substrate processing apparatus comprises a reaction chamber configured to process a plurality of substrates stacked at predetermined intervals, wherein a first gas flow from a first gas supply inlet and a second gas flow from a second gas supply inlet are crossed with each other before these gas flows reach the substrates. The method of manufacturing a semiconductor device comprises: loading the plurality of substrates into the reaction chamber; supplying a silicon-containing gas and a chlorine-containing gas from the first gas supply inlet into the reaction chamber, supplying a carbon-containing gas and a reducing gas from the second gas supply inlet into the reaction chamber and supplying a dopant-containing gas into the reaction chamber from the first gas supply inlet or the second gas supply inlet; and unloading the substrates from the reaction chamber.

Method of manufacturing semiconductor device, method of manufacturing substrate and substrate processing apparatus

There are provided a substrate processing apparatus, a method of manufacturing a semiconductor device, and a method of manufacturing a substrate, for growing a SiC epitaxial film at a high-temperature condition. The substrate processing apparatus comprises: a reaction chamber; a first gas supply system configured to supply at least a gas containing silicon atoms and a gas containing chlorine atoms, or a gas containing silicon and chlorine atoms; a second gas supply system configured to supply at least a reducing gas; a third gas supply system configured to supply at least a gas containing carbon atoms; a first gas supply nozzle connected to the first gas supply system or the first and third gas supply systems; a second gas supply nozzle connected to the second gas supply system or the second and third gas supply systems; and a controller configured to control the first to third gas supply systems.

Growing community of inventors

Toyama, Japan

Koei Kuribayashi