Riken Corporation

S.i Seiko Co., Ltd.

Aisin Seiki Kabushiki Kaisha

Nec Electronics Corporation

Shibuya Seiki Co., Ltd.

Kodo Kawase

Masayoshi Tonouchi

Tomofumi Ikari

Takayuki Shibuya

Kiyoshi Nikawa

Hiromasa Ito

Chiko Otani

Masatsugu Yamashita

Ken-ichiro Maki

Masahiro Yamashita

Tomoya Hirosumi

Yuki Watanabe

Kazuhiro Imai

Ryoichi Fukusawa

Toshihiro Kiwa

Yuichi Ogawa

Yuuki Watanabe

To provide a terahertz beam scanning apparatus and method that can scan a terahertz beam at high speed over a wide angle. The terahertz beam scanning apparatus includes: a laser devicethat generates a first laser beamand a second laser beamhaving different wavelengths; a laser optical systemthat focuses the first laser beamand the second laser beamon a same common focal point; and a terahertz generatorthat is located at the common focal point and generates a terahertz beamby difference frequency mixing. The laser optical systemis configured to be capable of changing a relative incidence &#x3b8;between the first laser beam and the second laser beam to the terahertz generator.

Terahertz beam scanning apparatus and method thereof

A method includes a spectroscopic measurement step of pre-measuring a spectrum [S] of tera-hertz wave absorbencies of a target component for a plurality of frequencies ranging about from 1 THz to 3 THz, and an object spectroscopic step of irradiating an object with tera-hertz waves of the plurality of frequencies to measure absorbencies I of the object. Presence and absence of the target component in the object is determined on the basis of the spectrum [S] of the absorbancy S and the spectrum [I] of the absorbancy I of the object.

Method and apparatus for inspecting target by tera-hertz wave spectrometry

An apparatus for detecting materials includes a database for storing detecting spectra of detecting materials, and a tera-hertz wave applying unit for applying tera-hertz waves having a plurality of different frequencies around a boundary between a light wave frequency and a radio wave frequency, to a predetermined position of an inspecting object. The apparatus includes an output wave receiving unit for receiving an output wave that is the tera-hertz wave having been applied to the inspecting object, and a determining unit for determining whether or not the output wave includes the detecting spectrum.

Method and apparatus for detecting materials

There is disclosed an apparatus comprising: a terahertz wave generation device which generates a terahertz wave; a terahertz wave irradiation device which irradiates an object to be inspected with the terahertz wave; and a scattering intensity detection device which cuts a rectilinear wave of the terahertz wave which has passed through the object to be inspected and which detects an intensity of a scattered wave, and a scattered material such as powder or foam contained in an envelope, a capsule, a container or the like is detected in a non-destructive manner without unsealing the envelope or the like.

Apparatus and method for detecting scattered material by terahertz wave

An apparatus for diagnosing a fault in a semiconductor device includes an laser applying unit, a detection/conversion unit, and a fault diagnosis unit. The semiconductor device is held at a state where no bias voltage is applied thereto. The laser applying unit then applies a pulse laser beam having a predetermined wavelength to the semiconductor device so as to two-dimensionally scan the semiconductor device with the pulse laser beam. The detection/conversion unit detects an electromagnetic wave generated from a laser applied position in the semiconductor device, and converts the detected electromagnetic wave into a time-varying voltage signal that corresponds to a time-varying amplitude of an electric field of the electromagnetic wave. The fault diagnosis unit derives an electric field distribution in the semiconductor device on the basis of the time-varying voltage signal to perform fault diagnosis on the semiconductor device.

Method and apparatus for diagnosing fault in semiconductor device

An apparatus that inspects wire breaking of a semiconductor integrated circuit includes a voltage applying device (), a light pulse source (), a scanning device (), an electromagnetic wave detection device (), and a wire breaking detection device (). The voltage applying device () maintains a semiconductor integrated circuit in a state where a predetermined voltage is being applied thereto. The light pulse source () generates an ultrashort light pulse (). The scanning device () two-dimensionally scans and irradiates the two-dimensional circuit of the semiconductor integrated circuit by using the ultrashort light pulse (). The electromagnetic wave detection device () detects an electromagnetic wave () radiated from a position irradiated with the ultrashort light pulse on the semiconductor integrated circuit. The wire breaking detection device () detects wire breaking of the irradiated position based on presence and absence or intensity of the electromagnetic wave.

Method and apparatus for inspecting wire breaking of integrated circuit

There are disclosed a nonlinear optical crystalwhich can generate a THz wave by a parametric effect; a pump light incidence apparatusfor allowing a pump lightto be incident upon the nonlinear optical crystal; and a seed light injection apparatusfor injecting a seed lighthaving a variable frequency in a generation direction of an idler lightgenerated by the pump light. The seed light injection apparatuscomprises angle dispersion compensation meansset so that an incidence angle &#x3b8;of the seed light upon the nonlinear optical crystalsubstantially equals to a desired phase matching condition regardless of a wavelength.

Apparatus for generating tera-Hertz wave and tuning method

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Wako, Japan

Kodo Kawase