Toppan Printing Co., Ltd.

Kodai Murata

Manabu Ito

Noriaki Ikeda

Chihiro Miyazaki

A source electrode () and a drain electrode () are film-formed, and a semiconductor layer () is formed in a substantially stripe shape substantially parallel to the X axis direction (channel-length direction) using a coating method. Then, a protection layer () is formed in a substantially stripe shape substantially parallel to the Y axis direction (channel width direction) orthogonal to the semiconductor layer (). Then, a semiconductor layer () portion not covered with the protection layer () is removed using an organic solvent or an inorganic solvent or a mixed solution of the organic solvent and the inorganic solvent. Consequently, the semiconductor layer () and the protection layer () are formed with improved alignment accuracy, and electrical isolation between transistor elements () can be achieved with a simplified process.

Thin film transistor, method of manufacturing same, and image display apparatus

A method for fabricating a thin-film transistor is provided whereby isolation of transistor devices is realized and the performance and the stability of the product thin-film transistor are improved. The thin-film transistor includes a substrate; a gate electrode laminated on the substrate; a gate insulating layer laminated on the substrate and the gate electrode; a recessed portion provided in the gate insulating layer; a semiconductor layer formed in the recessed portion of the gate insulating layer; and a source electrode and a drain electrode connected to the semiconductor layer at respective positions which are spaced apart from each other.

Thin-film transistor, fabrication method thereof, and image display device

One embodiment of the present invention is a thin film transistor having a substrate, a gate electrode formed on the substrate, a gate insulating film, a semiconductor layer formed on the gate insulating film, a protective film formed on the semiconductor layer and the gate insulating film and having first and second opening sections which are separately and directly formed on the semiconductor layer, a source electrode formed on the protective film and electrically connected to the semiconductor layer at the first opening section of the protective film, and a drain electrode formed on the protective film and electrically connected to the semiconductor layer at the second opening section of the protective film.

Growing community of inventors

Tokyo, Japan

Kodai Murata