Spansion Israel Ltd

Spansion Isreal, Ltd

Kobi Danon

Shai Eisen

Marcelo Krygier

Itzic Cohen

Ori Tirosh

Shmulik Hadas

Disclosed are methods and circuits for performing recovery associated with programming of non-volatile memory (NVM) array cells. According to embodiments, there are provided methods and circuits for programming NVM cells, including: (1) erasing NVM array cells; (2) loading an SRAM with user data; (3) if programming is successful, then flipping bits in the SRAM; and (4) if programming is not successful, reading data back from the array to the SRAM.

Recovery while programming non-volatile memory (NVM)

A cache programming operation which requires 2 SRAMs (one for the user and one for the array) may be combined with a multi-level cell (MLC) programming operation which also requires 2 SRAMs (one for caching the data and one for verifying the data), using only a total of two SRAMs (or buffers). One of the buffers (User SRAM) receives and stores user data. The other of the two buffers (Cache SRAM) may perform a caching function as well as a verify function. In this manner, if a program operation fails, the user can have its original data back so that he can try to reprogram it to a different place (address).

Operation of a non-volatile memory array

Growing community of inventors

Rishon Lezion, Israel

Kobi Danon