Advanced Optoelectronic Technology, Inc.

Au Optronics Corporation

Opto Tech Corporation

Ko-Wei Chien

Han-Ping D Shieh

Chih-Jen Hu

Chih-Ming Chang

Yung-Lun Lin

Yi-Cheng Hsu

Chien-Min Chen

Hung-Chin Lin

Yu-Mioun Chu

Yen-Kei Lei

Ching-Huan Lin

Po-Lun Chen

Ching-Yu Tsai

Chien-Liang Yeh

Meng-Chang Tsai

Hsiu-Chi Tung

Mu-Jen Su

Ju-Yuan You

Zong-Huai Lee

Chieh-Ting Chen

Ching-Sang Yang

Meng-Hsien Hong

Kuo-Fu Peng

June-Jay Wang

A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors.

Semiconductor lighting module package

A manufacturing method of an LED chip includes the following steps: providing a substrate; forming a light emitting layer comprising an n-type semiconductor layer and a p-type semiconductor layer on the substrate; forming a pair of electrodes electrically connected the n-type semiconductor layer and the p-type semiconductor layer, respectively; connecting a bonding wire to one of the electrodes by adding melted metal to a portion of a top surface of the electrode, a ratio between an area of the portion of the top surface of the electrode and the top surface of the electrode being no less 6:10; and solidifying the melted metal to form a bonding pad to connect the bonding wire and the electrode together.

Method for manufacturing light emitting diode chip

An LED package includes a substrate, an LED chip, and an encapsulation. The substrate includes a first surface. The LED chip is mounted on the first surface of the substrate. The encapsulation covers the LED chip. The encapsulation includes a transparent main body and a number of carbon nanotubes distributed in the transparent main body; the carbon nanotubes are arranged substantially extending along a same direction whereby light generated by the LED chip is polarized prior to radiation out of the encapsulation.

LED package and method for manufacturing the same

An exemplary LED chip includes a substrate, a buffer layer formed on the substrate and a light emitting layer formed on the buffer layer. The light emitting layer includes an n-type semiconductor layer and a p-type semiconductor layer. A first electrode is electrically connected with one of the n-type semiconductor layer and the p-type semiconductor layer. A second electrode is electrically connected with the other one of the n-type semiconductor layer and the p-type semiconductor layer. A bonding pad is formed on a top surface of the first electrode. A bonding wire is secured to the bonding pad. A ratio between a contacting area between the bonding pad and the top surface of the first electrode and an area of the top surface of the first electrode is no less than 6:10.

Light emitting diode chip and manufacturing method thereof

An LED package structure includes an LED die, a lead frame and a housing connecting to the lead frame. The LED die is located on a surface of the lead frame. The housing includes an inner face surrounding the LED die. The inner face has a bottom edge connected to the surface of the lead frame, a top edge and a waist line between the bottom edge and top edge. The bottom edge surrounds an area less than an area surrounded by the waist line. The area surrounded by the waist line is less than an area surrounded by the top edge. The inner face has a curved surface between the waist line and the bottom edge.

LED package structure

A semiconductor package includes at least four lead frames each having an extending portion and a connecting portion, a heat dissipation plate having a top surface and a bottom surface, at least one semiconductor chip positioned on the top surface of the heat dissipation plate. At least one conductive wire electrically connects the chip to the lead frames. An encapsulation covers the lead frames, the heat dissipation plate, the semiconductor chip, and the conductive wires, while the bottom surface of the heat dissipation plate and the extending portions of the lead frames are exposed.

Semiconductor package

A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.

Semiconductor light emitting device package

A three-dimensional (3D) display system includes a liquid crystal display and a directional backlight module. The backlight module disposed behind the liquid crystal display includes a light-guide plate, a focusing layer, a left backlight source, a right backlight source, and a first V-shaped micro-grooved and a second V-shaped micro-grooved structures of the light-guide plate. The focusing layer is disposed between the light-guide plate and the liquid crystal display. The 3D display method is to instantly switch on and off the left and the right backlight sources to alternately emit the light from the left side and right side of light-guide plate. By means of the first and the second V-shaped micro-grooved structure, the light transmitted from the light-guide plate is focused by the focusing layer within a particular range of angles and passing through the liquid crystal layer for being alternately projected to form a 3D image.

Three-dimensional display system and method thereof

A backlight module including a first light guide plate, a first light source, a second light guide plate, and a second light source. The first light guide plate includes a first side, a second side opposite to the first side, and a first surface with a micro-groove structure. The first light source is disposed on the first side of the first light guide plate. The second light guide plate is disposed on the first light guide plate, and includes a third side, a fourth side opposite to the third side, and a second surface with a micro-groove structure. The fourth side and the second side are located at the same side. The second light source is disposed on the fourth side of the second light guide plate.

Backlight module for 3D display device and method for displaying 3D images utilizing the same

A lighting system capable of adjusting color temperature is provided. The lighting system mainly comprises a light source module and a mixing assembly. The light source module produces red-color, blue-color, and green-color lights so as to control the color temperature of a white light resulted from mixing the color lights. The mixing assembly is located at a side of the light source module and comprises a first, a second, and a third mixing device sequentially arranged along the light transmission path. The function of the first and third mixing devices is for light mixing by causing the lights to undergo multiple internal reflections. The second mixing device directs the lights passing through the first mixing device in a reverse direction (180 degrees) and enters into the third mixing device.

Growing community of inventors

Hsinchu, Taiwan

Ko-Wei Chien