Hitachi, Ltd.

Hitachi Metals, Ltd.

Ko Soeno

Hisashi Ando

Hiroshi Sakamoto

Masatoshi Tsuchiya

Akira Misumi

Hiroshi Fukushima

Satoshi Shimada

Motohisa Nishihara

Masateru Suwa

Jin Onuki

Toshio Doi

Tomio Iizuka

Akira Okayama

Testuo Oyama

Kazuji Yamada

Yasumasa Matsuda

Kenichi Onisawa

Toshiyuki Aida

Akio Yasukawa

Takao Kawamura

Shigehiko Yamamoto

Masanori Tanabe

Mitsuo Chigasaki

Yoshitaka Matsuoka

Takeo Nagata

Keiichi Morita

Mitsuo Ai

Tomio Yasuda

Atsuya Kamada

Hideyuki Nemoto

Tetsuo Oyama

Tomomasa Yoshida

Kiyoshi Otaka

Hisakichi Onodera

Hisakiti Onodera

Hisakithi Onodera

Hisasuke Takeuchi

Jin Onuke

Akio Okayama

A solder joint between a semiconductor substrate and an electrode is disclosed in which that principal surface of the semiconductor substrate where an n-type semiconductor layer is exposed is bonded to the electrode with brazing solder, and the brazing solder includes aluminum solder provided on the side of the semiconductor substrate and copper solder provided on the side of the electrode. Since solid phase adhesion can be achieved between aluminum and copper even at temperatures below an eutectic temperature of 548.degree. C., the semiconductor substrate can be soldered to the electrode at the low temperatures.

Semiconductor device

A semiconductor pressure transducer comprising a piezoresistive semiconductor diaphragm, a cylindrical stem made of a glass having a thermal expansion coefficient approximating that of the diaphragm and hermetically bonded by anodic bonding to the latter, and a cylindrical holder hermetically bonded by anodic bonding to the cylindrical stem is disclosed. The holder is made of a ferromagnetic alloy material containing Fe, Co and Ni and having a mean thermal expansion coefficient of 35.times.10.sup.-7 /.degree.C. or less within the temperature range between 30.degree. C. and 350.degree. C.

Semiconductor pressure transducer

A structure comprising a main body formed of a nickel base alloy, and a NiAl coating applied to the main body, wherein the NiAl coating includes a nickel rich NiAl layer and an aluminum rich NiAl layer and the thickness ratio of the nickel rich NiAl layer to the whole NiAl coating is in a range between 20 and 40%. A method of applying an aluminum coating to a nickel base alloy comprising the steps of forming an aluminide layer of Ni.sub.2 Al.sub.3 on the surface portion of the nickel base alloy by the diffusion and penetration of aluminum, and subjecting the alumide layer to heat treatment to change the aluminide layer to a monoaluminide layer and making the thickness ratio of a nickel rich NiAl layer to the whole monoaluminide layer be in the range between 20 and 40%.

Method of producing nickel base alloy structure with NiAl coating

A directly heated cathode for electron tube having a stable electron emission characteristic is provided. The cathode comprises a base metal of Ni-W alloy consisting essentially of 20-30% by weight of tungsten, the balance being nickel and incidental impurities, said alloy being free from a reducing agent, and a layer of thermoelectron emission oxides laid directly and baked onto the flat part at the front side of the base metal. The layer of thermoelectron emission oxides is in direct contact with the flat part of the base metal.

Directly heated cathode for electron tube

A strain gauge is formed on one main surface of a semiconductor single crystal substrate while an insulating oxide film is formed on the other main surface of the substrate. A metal junction layer including several layers inclusive of eutectic alloy layers is formed on the surface of the insulating oxide film and the thus prepared structure is mounted on a metal strain generator. By heating this assembly to temperatures approximating to the eutectic point of the eutectic alloy layer, the semiconductor substrate and the metal strain generator are joined together.

Method of producing semiconductor displacement transducer

A directly heated cathode for an electron tube comprising a base plate made of an alloy containing 20 to 30% by weight of W, 0.12 to 0.28% by weight of Zr and the remainder being Ni and an electron emissive oxide layer disposed directly on the base plate shows good and stable electron emission properties and when it is installed in a television picture tube, the picture tube shows excellent initial properties.

There is provided a method of fabricating a semiconductor device wherein in a bonding surface of a silicon substrate of n-type conductivity are formed recesses having each a bonding surface of a higher order plane index than that of the bonding surface of the silicon substrate, and the substrate and electrodes and the like members are bonded together with an aluminum solder so as to decrease a forward voltage drop FVD. After forming the recesses but prior to the bonding with the aluminum solder, phosphor is diffused into a region ranging from the bonding surface to a depth of 20 microns, thereby further decreasing the forward voltage drop FVD. When cooling after the bonding, a temperature gradient is established so that temperature in the silicon substrate is higher than a temperature in the molten aluminum so that the forward voltage drop FVD can be decreased further.

Method of fabricating semiconductor device by bonding together silicon

A method of producing a sintered material having a high wearing resistance and damping capacity by mixing 5-30 wt. % of a powdery metal selected from the group consisting of lead, magnesium and graphite with the remainder of a powdery metal selected from the group consisting of iron, copper, aluminum, cast iron and alloys thereof, compression-molding the mixture, subjecting the same to plastic treatment and sintering the same by heating to a temperature above a recrystallization point of the matrix metal, and the sintered material thus produced.

Method of producing sintered material having high damping capacity and

A directly heated cathode for electron tube having a stable electron emission characteristic and a low cut-off voltage is provided. The cathode comprises a base metal of an alloy consisting essentially of 20-30% by weight of tungsten and a trace amount to 0.25% by weight of zirconium, the balance being nickel, binder dots of metallic nickel powders distributed on a flat part at the front side of the base metal, and a layer of thermoelectron emission oxides laid on the flat part at the front side of the base metal. The layer of thermoelectron emission oxides is in direct contact with the flat part through clearances among the binder dots of the metallic nickel powders.

A semiconductor transducer comprising an improved strain-yielding body yielding a strain in response to the impartation of a force or displacement, and a semiconductor strain gauge bonded to the strain-yielding body. The improved strain-yielding body is made of an iron-nickel-cobalt alloy containing 28.2 to 31.0% by weight of nickel and 15.0 to 19.5% by weight of cobalt. This iron-nickel-cobalt alloy is initially heated up to a temperature above 600.degree. C. for the purpose of standard heat treatment for removing its internal strain. After the standard heat treatment, the iron-nickel-cobalt alloy is subjected to cold working at a working rate of more than and including 60%, and is then subjected to heat treatment at a temperature between 350.degree. C. and 600.degree. C. The heat-treated iron-nickel-cobalt alloy is shaped into the predetermined form of the strain-yielding body.

Semiconductor transducer

The present cathode for cathode ray tube of directly heating type is characterized by comprising a cathode substrate body having two leg pieces extended in the same direction and a flat part connected to one end of each leg piece, prepared by shaping a flat metal plate of nickel- or cobalt-based alloy, a bonding layer having an uneven surface prepared by diffusion bonding by heating a powder layer comprising powders of alloy or mixture of nickel and cobalt formed on the flat part, to which a thermionic emission layer is to be bonded, and the thermionic emission layer, and has a very small deformation when used and a longer life. A cathode with much less deformation and much longer life can be obtained by using a cathode substrate body prepared from a flat metal plate provided with a thinner metal layer of at least one of nickel and cobalt on its surface than the flat metal plate by diffusion bonding. A cathode with much less deformation after the service for a long period and much longer life is obtained by using a cathode substrate body prepared from a flat metal plate provided with a metal layer of at least one of nickel and cobalt having a smaller thickness on its surface than that of the flat metal plate by diffusion bonding, and then applying a plastic working to the flat metal plate to a desired thickness.

Cathode for cathode ray tube of directly heating type and process for

In a process for producing a cathode for a cathode ray tube of directly heating type, which comprises shaping a heat-resistant and electro-conductive, flat metal plate, into a cathode substrate body having two leg pieces extended in the same direction and a flat part connected to one end of each leg piece, forming a heat-diffusible metal powder layer having a good affinity to said flat metal plate and on an outer surface of said flat part, heating the powder layer, thereby diffusion bonding the powder layer to the flat part and forming a bonding layer having an uneven surface, to which a thermionic emission layer is to be bonded, and forming the thermionic emission layer on the surface of the bonding layer, the process is characterized by forming on said flat metal plate a metal layer having a good affinity to the flat metal plate, by diffusion bonding, thereby forming a compound plate, and shaping the resulting compound plate into the shape of said cathode substrate body. A cathode having less thermal deformation and a longer life can be produced thereby. Furthermore, the process is characterized by applying a plastic working to the compound plate to a desired thickness and shaping the resulting compound plate into the shape of the cathode substrate body, and a cathode having much less thermal deformation and much longer life can be produced thereby.

Process for producing cathode for cathode ray tube of directly heating

This invention relates to an apparatus for production of metal powders of a low oxygen content, which are preferred as raw material powders for sintered bodies of a high toughness, according to the water atomizing method. More specifically, when a molten metal is sprayed in a limited space with use of a liquid crystal medium and cooled promptly, a metal powder results of a good moldability which has an oxygen content corresponding to 1/2 or less of the oxygen contents of metal powders prepared by conventional apparatuses and which is excellent in the size uniformity.

Apparatus for production of metal powder according water atomizing method

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Hitachi, Japan

Ko Soeno