Fujitsu Corporation

Fujitsu Semiconductor Limited

Mitsui Mining & Smelting Company, Ltd.

Fujitsu Microelectronics Limited

Amada Holdings Company Ltd.

Ko Nakamura

Wensheng Wang

Tomohiro Takamatsu

Yoshihiro Arimoto

Sadahiro Kishii

Yoshimasa Horii

Akiyoshi Hatada

Junichi Watanabe

Katsuyoshi Matsuura

Kazuaki Takai

Masaki Kurasawa

Aki Dote

Mitsushi Fujiki

Kenji Nomura

Rintaro Suzuki

Naoyuki Sato

Hiroshi Horie

Kenzo Hanawa

Makoto Takahashi

Masaki Aoki

Fan Chu

Glen Richard Fox

Takashi Eshita

Hiroshi Takano

Takahiro Shibata

Brian Lee Eastep

Akio Itoh

Kenkichi Suezawa

Naruo Ueda

Atsushi Fukuroda

Mitsuteru Mushiga

Norio Imai

Provided is a laser processing device that performs laser processing on a workpiece to which a protective film has been attached, wherein a determination is made as to whether or not a common part for which laser marking processing is necessary for cutting the protective film is present on the basis of processing information including a processing program, and when a common part for which laser marking processing is necessary for cutting the protective film is present, the laser marking processing process for that common part is added to the processing program.

Laser processing device and laser processing method

There are provided a capacitor lower electrode formed on an adhesive layer, whose surface roughness is 0.79 nm or less, and having a (111) orientation that is inclined from a perpendicular direction to an upper surface of a substrate by 2.3&#xb0; or less, a ferroelectric layer having a structure the (111) orientation of which is inclined from the perpendicular direction to the upper surface of the substrate by 3.5&#xb0; or less, and a capacitor upper electrode.

Manufacturing method of a semiconductor device

A semiconductor device has a ferro-electric capacitor with small leak current and less process deterioration even upon miniaturization. The semiconductor device includes: a semiconductor element formed in a semiconductor substrate; lamination of an interlayer insulating film and a lower insulating shielding film having a hydrogen/moisture shielding function, the lamination being formed covering the semiconductor element; a conductive adhesion enhancing film formed above the lower insulating shielding film; and a ferro-electric capacitor including a lower electrode formed above the conductive adhesion enhancing film, a ferro-electric film formed on the lower electrode and being disposed within the lower electrode as viewed in plan, and an upper electrode formed on the ferro-electric film and being disposed within the ferro-electric film as viewed in plan, wherein the conductive adhesion enhancing film has a function of improving adhesion of the lower electrode and reducing leak current of the ferro-electric capacitor.

Semiconductor device with ferro-electric capacitor

A method for manufacturing a semiconductor device comprises: forming a lower electrode on a semiconductor substrate, sputtering a ferroelectric film on the lower electrode using a target, thermal treating the ferroelectric film in an atmosphere containing oxygen in accordance with an accumulated period of use of the target for fabricating the ferroelectric film, and forming an upper electrode on the ferroelectric film.

Semiconductor device and method for manufacturing the same having improved polarization reversal characteristic

According to the present invention, there is provided a method for manufacturing a semiconductor device, including the steps of forming an insulating film on a silicon substrate, forming a first conductive film on the insulating film, forming an aluminum crystal layer on the first conductive film, forming a ferroelectric film containing Pb(ZrTi)O(where 0&#x2266;x&#x2266;1) on the aluminum crystal layer, forming a second conductive film on the ferroelectric film, and patterning the first conductive film, the ferroelectric film, and the second conductive film to form a capacitor including a lower electrode, a capacitor dielectric film, and an upper electrode which are laminated sequentially.

Semiconductor device and method for manufacturing the same

A method for fabricating a semiconductor device includes the steps of forming a first ferroelectric film over a lower electrode, crystallizing the first ferroelectric film, forming a second ferroelectric film in an amorphous state over the first ferroelectric film so as to fill voids existing on a surface of the first ferroelectric film, and forming an upper electrode over the second ferroelectric film of the amorphous state, wherein the crystallizing step of the first ferroelectric film is conducted by a thermal annealing process at a temperature of 585&#xb0; C. or higher.

Fabrication process of semiconductor device

Semiconductor device and manufacturing method of a semiconductor device

An IrOfilm is formed as a first conductive oxide film on a PLZT film by a reactive sputtering method. Thereafter, thermal treatment by, for example, RTA is performed in an atmosphere containing oxygen having partial pressure of less than 5% of atmospheric pressure. As a result, crystallization of the PLZT film is promoted, and annealing treatment is performed for the IrOfilm. Thereafter, furnace annealing at 600&#xb0; C. or higher, for example, 650&#xb0; C. is performed for 60 minutes in, for example, an Oatmosphere as recovering annealing to recover oxygen deficiency in the PLZT film. Subsequently, an IrOfilm is formed as a second conductive oxide film on the IrOfilm by a sputtering method.

Manufacturing method of semiconducter device

A capacitor which has a lower electrode having a structure in which the first conductive layer containing a first metal, a second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and a third conductive layer that is formed on the second conductive layer and made of a third metal different from the first metal. These layers are formed sequentially. A dielectric layer is formed on the lower electrode, and an upper electrode is formed on the capacitor dielectric layer.

Semiconductor capacitor with diffusion prevention layer

A method for fabrication of ferroelectric capacitor elements of an integrated circuit includes steps of deposition of an electrically conductive bottom electrode layer, preferably made of a noble metal. The bottom electrode is covered with a layer of ferroelectric dielectric material. The ferroelectric dielectric is annealed with a first anneal prior to depositing a second electrode layer comprising a noble metal oxide. Deposition of the electrically conductive top electrode layer is followed by annealing the layer of ferroelectric dielectric material and the top electrode layer with a second anneal. The first and the second anneal are performed by rapid thermal annealing.

Process for producing high quality PZT films for ferroelectric memory integrated circuits

A semiconductor device has a ferroelectric capacitor including a ferroelectric film provided on a lower electrode and an upper electrode provided on the ferroelectric film, wherein the upper electrode is formed of a first layer of a non-stoichiometric oxide and a second layer of a non-stoichiometric or stoichiometric oxide provided on the first layer, the second oxide having a composition closer to the stoichiometric composition as compared with the first layer.

Semiconductor device having a ferroelectric capacitor and fabrication process thereof

There is provided the capacitor which has the lower electrode having a structure in which the first conductive layer containing a first metal, the second conductive layer that is formed on the first conductive layer and made of the metal oxide of the second metal different from the first metal, and the third conductive layer that is formed on the second conductive layer and made of the third metal different from the first metal are formed sequentially; the dielectric layer formed on the lower electrode; and the upper electrode formed on the capacitor dielectric layer.

A slurry contains MnO.sub.2 or other manganese oxide as a primary component of abrasive particles. Further, a polishing process using such a manganese oxide abrasive and a fabrication process of a semiconductor device using such a polishing process are disclosed.

Slurry containing manganese oxide and a fabrication process of a

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Kawasaki, Japan

Ko Nakamura