Taiwan Semiconductor Manufacturing Comp. Ltd.

Ko-Min Lin

Ying-Lang Wang

Chih-Mu Huang

I-Chih Chen

Fu-Tsun Tsai

Yung-Fa Lee

A semiconductor device includes a gate structure on a substrate; a raised source/drain region adjacent to the gate structure; and an interconnect plug on the doped region. The raised source/drain region includes a top surface being elevated from a surface of the substrate; and a doped region exposed on the top surface. The doped region includes a dopant concentration greater than any other portions of the raised source/drain region. A bottommost portion of the interconnect plug includes a width approximate to a width of the doped region.

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Tainan, Taiwan

Ko-Min Lin