Sicoxs Corporation

Kabushiki Kaisha Toyota Jidoshokki

National Institute of Advanced Industrial Science and Technology

Ko Imaoka

Akiyuki Minami

Hidetsugu Uchida

Motoki Kobayashi

Takamitsu Kawahara

Kuniaki Yagi

Toyokazu Sakata

Naoki Hatta

Tomoatsu Makino

Toshihisa Shimo

Hideki Takagi

Takanori Murasaki

Yuuichi Kurashima

Mitsuharu Kato

A technique related to a bonded semiconductor substrate capable of reducing an interface resistance is provided. The semiconductor substrate comprises a single-crystalline SiC substrate and a polycrystalline SiC substrate. The single-crystalline SIC substrate and the polycrystalline SiC substrate are bonded. A bonded region of the single-crystalline SiC substrate and the polycrystalline SiC substrate contains 1&#xd7;10(atoms/cm) or more of particular atoms.

Semiconductor substrate

A method for manufacturing a semiconductor substrate may comprise irradiating a surface of a first semiconductor layer and a surface of a second semiconductor layer with one or more types of first impurity in a vacuum. The method may comprise bonding the surface of the first semiconductor layer and the surface of the second semiconductor layer to each other in the vacuum. The method may comprise applying heat treatment to the semiconductor substrate produced in the bonding. The first impurity may be an inert impurity that does not generate carriers in the first and second semiconductor layers. The heat treatment may be applied such that a width of an in-depth concentration profile of the first impurity contained in the first and second semiconductor layers is narrower after execution of the heat treatment than before the execution of the heat treatment.

Semiconductor substrate and method for manufacturing semiconductor substrate

A technique disclosed herein relates to a manufacturing method for a semiconductor substrate having the bonded interface with high bonding strength without forming an oxide layer at the bonded interface also for the substrate having surface that is hardly planarized. The manufacturing method for the semiconductor substrate may include an amorphous layer formation process in which a first amorphous layer is formed by modifying a surface of a support substrate and a second amorphous layer is formed by modifying a surface of a single-crystalline layer of a semiconductor. The manufacturing method may include a contact process in which the first amorphous layer and the second amorphous layer are contacted with each other. The manufacturing method may include a heat treatment process in which the support substrate and single-crystalline layer are heat-treated with the first amorphous layer and the second amorphous layer being in contact with each other.

Manufacturing method for semiconductor substrate

Growing community of inventors

Kariya, Japan

Ko Imaoka