Taiwan Semiconductor Manufacturing Comp. Ltd.

Ko-Bin Kao

Ru-Gun Liu

Li-Jen Wu

Su-Yu Yeh

Chih-Ming Lai

Ken-Hsien Hsieh

Chia-Hung Chung

Chih-Liang Chen

Kam-Tou Sio

Chun-Kuang Chen

Yung-Sung Yen

Shun Li Chen

Hui-Ting Yang

Yu Kai Chen

Dian-Hau Chen

Charles Chew-Yuen Young

Yu-Kai Chen

Ming-Hung Lin

Zhi-You Ke

Chung-Yi Lin

Hsiang-Lin Chen

Jiing-Feng Yang

Yung-Shih Cheng

Shi-Ming Wang

Chin-Kun Fang

Oliver Yu

Tzu-Hao Huang

Chih-Hao Hsieh

Ching-Yu Chang

Hung-Jui Kuo

Chin-Hsiang Lin

Tsai-Sheng Gau

Burn Jeng Lin

Wen-Chun Huang

Wei-Liang Lin

Hua-Tai Lin

Chien-Wei Wang

Hung-Ming Chen

Kuei Shun Chen

Chii-Ping Chen

Ming-Hui Chih

Heng-Jen Lee

Li-Kong Turn

Chia-Hsiang Lin

Bang-Chein Ho

Chun-Yu Chen

Jui-Ching Wu

Tsung-Chih Chien

Yong-Ting Wu

Wen-Chieh Hsieh

Forster Yuan

Wen-Shiung Chen

Ai-Jen Jung

A method (of manufacturing conductors for a semiconductor device) includes: forming active regions (ARs) in a first layer, the ARs extending in a first direction; forming a conductive layer over the first layer; forming first, second and third caps over the conductive layer, the caps extending in a second direction perpendicular to the first direction, and the caps having corresponding first, second and third sensitivities that are different from each other; removing portions of the conductive layer not under the first, second or third caps resulting in gate electrodes under the first caps and first and second drain/source (D/S) electrodes correspondingly under the second or third caps; and selectively removing portions of corresponding ones of the first D/S electrodes and the second D/S electrodes.

Method of manufacturing conductors for semiconductor device

A system for detecting leakage of a liquid supply pipe includes a pipe casing for enclosing an end portion of the liquid supply pipe adjoined to a nozzle and a sensor system configured to detect presence of a liquid leaked from the liquid supply pipe at the end portion. The sensor system is in alignment with the end portion of the liquid supply pipe.

System and method for liquid leak detection

A method of manufacturing a semiconductor device is as below. An exposed photoresist layer is developed using a developer supplied by a developer supplying unit. An ammonia gas by-product of the developer is discharged through a gas outlet of the developer supplying unit into a treating tool. The ammonia gas by-product is retained in the treating tool. A concentration of the ammonia gas by-product is monitored.

Manufacturing method of semiconductor device and semiconductor processing system

A system that generates a layout diagram has a processor that implements a method, the method including: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.

Method and system of manufacturing conductors and semiconductor device which includes conductors

A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Embodiments of the present disclosure describe a chemical replacement system and a method to automatically replace PR bottles. The chemical replacement system includes a computer system and a transfer module. The computer system can receive a request signal to replace one or more chemical containers and transmit a command to the transfer module. The transfer module, being controlled by the computer system, can include a holder configured to hold the one or more chemical containers (e.g., PR bottles); a door unit configured to open in response to the command; and a transfer unit configured to eject the holder in response to the command for replacement. The chemical replacement system can further include an automated vehicle configured to replace the one or more chemical containers in the ejected holder.

Chemical replacement system

A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.

Method for monitoring gas in wafer processing system

A method of generating a layout diagram includes: generating first and second conductor shapes; generating first, second and third cap shapes correspondingly over the first and second conductor shapes; arranging a corresponding one of the second conductor shapes to be interspersed between each pair of neighboring ones of the first conductor shapes; generating first cut patterns over selected portions of corresponding ones of the first cap shapes; and generating second cut patterns over selected portions of corresponding ones of the second cap shapes. In some circumstances, the first cut patterns are designated as selective for a first etch sensitivity corresponding to the first cap shapes; and the second cut patterns are designated as selective for a second etch sensitivity corresponding to the second cap shapes.

The present disclosure describes a container for placing an object therein. The container includes a container body and a lid over the container body, a collision-preventing portion attached to one or more of the container body and the lid and configured to buffer an impact force, a pairing recognition mechanism configured to detect an object placed in the container body, and a liquid-detecting sensor configured to detect a leakage from the object.

Photoresist bottle container

A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.

Lithographic technique for feature cut by line-end shrink

A method of manufacturing conductors for a semiconductor device, the method comprising: forming a structure on a base; and eliminating selected portions of members of a first set and selected portions of members of a second set from the structure. The structure includes: capped first conductors arranged parallel to a first direction; and capped second conductors arranged parallel to and interspersed with the capped first conductors. The capped first conductors are organized into at least first and second sets. Each member of the first set has a first cap with a first etch sensitivity. Each member of the second set has a second cap with a second etch sensitivity. Each of the capped second conductors has a third etch sensitivity. The first, second and third etch sensitivities are different.

Method of manufacturing conductors and semiconductor device which includes conductors

Growing community of inventors

Taichung, Taiwan

Ko-Bin Kao