Koninklijke Philips Corporation N.v.

Ferro Corporation

U.S. Philips Corporation

Knuth Albertsen

Tilman Ulrich Schlenker

Wilhelm A Groen

Bernd Rausenberger

Petra Huppertz

Willibrordus J L M J Coppens

Ronald Mikkenie

Gerardus Christiaan Marie Dortant

Heinz Georg Kohler

Gerhardus W Koebrugge

Daniel Edward McCauley

Dieter W Mateika

Mike S H Chu

Oliver Steigelmann

Mohammed H Megherhi

Wilhelm-Albert Groen

Elizabeth W Römer

Willibrordus J Coppens

Multilayer ceramic chip capacitors which satisfy X8R requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel and nickel alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise a barium titanate base material doped with other metal oxides such as BaO, YO, ZrO, SiO, MgO, MnO, MoO, CaO, LuO, YbO, or WOin various combinations.

X8R dielectric composition for use with nickel electrodes

Multilayer ceramic chip capacitors which satisfy Y5V requirements and which are compatible with reducing atmosphere sintering conditions so that non-noble metals such as nickel, copper, and alloys thereof may be used for internal and external electrodes are made in accordance with the invention. The capacitors exhibit desirable dielectric properties (high capacitance, low dissipation factor, high insulation resistance), excellent performance on highly accelerated life testing, and very good resistance to dielectric breakdown. The dielectric layers comprise BaTiOdoped with other metal oxides such as MgO, CaO, ZnO, MnO, ZrO, SiO, NdO, NbO, and YO.

Y5V dielectric composition

The dielectric composition contains a mixture of a ceramic composition containing BaRETiO, wherein RE represents a rare earth element, with 0.05&#x2266;a&#x2266;0.25, 0.525&#x2266;b&#x2266;0.70, 0.85&#x2266;c&#x2266;1.0, and 2a+3b+4c=6, and free from lead and bismuth, a glass composition, and a metal oxide. The glass composition preferably contains ZnO or MgO, SiO, and at least 10% by weight of LiO or TiO. Preferably, the alkaline earth metal oxide is MgO. By preference, the glass composition essentially consists of 50&#x2013;80% weight of SiO, 5&#x2013;25% weight of MgO, and optionally another alkaline earth metal oxide, and 10&#x2013;25% by weight of LiO, and is substantially free from boron. The dielectric composition can be sintered in the presence of Cu electrodes at a temperature below the melting point of Cu so as to manufacture an electronic device such as a ceramic multilayer element. After sintering, the dielectric composition has a relative dielectric constant of at least 55.

Dielectric composition, method of manufacturing a ceramic multilayer element, and electronic device

The dielectric composition contains a mixture of a ceramic composition containing Ba RE Ti O , wherein RE represents a rare earth element, with 0.05&lE;a&lE;0.25, 0.525&lE;b&lE;0.70, 0.85&lE;c&lE;1.0, and 2a&plus;3b&plus;4c&equals;6, and free from lead and bismuth, a glass composition, and a metal oxide. The glass composition preferably contains ZnO or MgO, SiO , and at least 10% by weight of Li O or TiO . Preferably, the alkaline earth metal oxide is MgO. By preference, the glass composition essentially consists of 50-80% weight of SiO , 5-25% weight of MgO, and optionally another alkaline earth metal oxide, and 10-25% by weight of Li O, and is substantially free from boron. The dielectric composition can be sintered in the presence of Cu electrodes at a temperature below the melting point of Cu so as to manufacture an electronic device such as a ceramic multilayer element. After sintering, the dielectric composition has a relative dielectric constant of at least 55.

A gas discharge lamp with at least one capacitive coupling structure ( ) is described, which lamp has the particular characteristic that the coupling structure ( ) comprises a ceramic material which comprises pure BaTiO . In particular an additional doping of at least part of the BaTiO with barium leads to a material whose Curie temperature and saturation polarization are substantially higher and whose coercitive field strength is substantially smaller, so that a gas discharge lamp with a coupling structure manufactured from this material can be operated at substantially higher temperatures and at a lower operating voltage. Various dopings of the BaTiO with titanium, manganese, and lead are furthermore described.

Gas discharge lamp

The invention describes an electronic component, in particular a multiplayer component, with a dielectric and at least one electrode. The dielectric is a composite made of a dielectric ceramic material and an organic polymer. To manufacture the electronic component, the dielectric ceramic material is mixed with a suitable monomer, the mass id formed, and the monomer is polymerized. Ceramic bodies of stable shape are obtained which can be processed further into capacitors, antennas, or other passive components in that electrodes are provided. Sintering of the electronic components is no longer necessary.

Electronic composite material component

Liquid crystal picture screen with improved backlighting

A capacitor having a ceramic dielectric and at least two electrodes, the ceramic dielectric being predominantly composed of a dielectric, ceramic composition having a main component of BaTiO.sub.3 and/or �Ba.sub.1-y Sr.sub.y !Ti.sub.x O.sub.31 z, wherein 0.95.ltoreq.x.ltoreq.0.995, 0.ltoreq.y.ltoreq.0.04, z=2(1-x), and having at least an additive of the group formed by XMnO.sub.3, X.sub.2 MoO.sub.6, X.sub.2 WO.sub.6, X.sub.2 SiO.sub.5 +Mn.sub.2 SiO.sub.4 and Li.sub.2 SiO.sub.3 +Mn.sub.2 SiO.sub.4, and at least an additive of the group formed by Li.sub.2 SiO.sub.3, SiO.sub.2 and a mixture of 6 mol % Li.sub.2 O, 13 mol % BaO, 13 mol % SrO, 13 mol % MgO and 55 mol % SiO.sub.2, which is calcined at 800.degree. C., and, if necessary, an additive of the group formed by XInO.sub.3, XGaO.sub.3 and XAlO.sub.3, wherein X is one or more elements of the group formed by Y, Dy and Er, is characterized by a flat .DELTA.C/.DELTA.t curve and a stable dielectric behavior on exposure to temperature and voltage influences.

Multilayer capacitor comprising a dielectric of modified barium

Growing community of inventors

Goch, Germany

Knuth Albertsen