Csem Centre Suisse D'electronique Et De Microtechnique Sa&#x2014;recherche Et D&#xe9;veloppement

Schott Solar Ag

Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Knut Vaas

Berthold Schum

Ingo Schwirtlich

Wilfried Schmidt

Andreas Teppe

Agata Lachowicz

Dieter Franke

A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so as to perform etching homogeneously, an HF-containing etching solution containing at least one oxidizing agent selected from the group of peroxodisulfates, peroxomonosulfates, and hydrogen peroxide.

Method for the wet-chemical etching back of a solar cell emitter

A method for chemically treating a disc-shaped substrate having a bottom surface, a top surface and side surfaces by contacting a process medium that is fluid-chemically active with at least the bottom surface of the substrate. The substrate is moved relative to the process medium while forming a triple line between the substrate, the substrate medium and the atmosphere surrounding the substrate and medium. In order to chemically remove errors, particularly in the side surfaces, relative motion should be carried out while avoiding a contacting of the process medium with the top surface of the substrate, where the triple line is formed at a desired height of the side surface facing away from the process medium flow side in relation to the relative motion between the substrate and the process medium.

Method for chemically treating a substrate

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Alzenau, Germany

Knut Vaas