Qunano Ab

Sol Voltaics Ab

Alignedbio Ab

Btg International Limited

Knut Deppert

Lars Samuelson

Martin Magnusson

Jonas Ohlsson

Greg Alcott

Olivier Postel

Magnus Heurlin

Carl Martin Hall Magnusson

Thomas Johannes Krinke

Lars Ivar Samuelson

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber.

Concentric flow reactor

A gas phase nanowire growth apparatus including a reaction chamber, a first input and a second input. The first input is located concentrically within the second input and the first and second input are configured such that a second input fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

Concentric flower reactor

The present invention provides a method and a system for forming wires () that enables a large scale process combined with a high structural complexity and material quality comparable to wires formed using substrate-based synthesis. The wires () are grown from catalytic seed particles () suspended in a gas within a reactor. Due to a modular approach wires () of different configuration can be formed in a continuous process. In-situ analysis to monitor and/or to sort particles and/or wires formed enables efficient process control.

Gas-phase synthesis of epitaxial semiconductor wires from seed crystals

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires and applying an electrical field over the population of nanowires, whereby an electrical dipole moment of the nanowires makes them align along the electrical field. Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate. The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

Method for manufacturing a nanowire structure

A gas phase nanowire growth apparatus including a reaction chamber (), a first input and a second input (B,A). The first input is located concentrically within the second input and the first and second input are configured such that a second fluid delivered from the second input provides a sheath between a first fluid delivered from the first input and a wall of the reaction chamber. An aerosol of catalyst particles may be used to grow the nanowires.

Gas-phase synthesis method for forming semiconductor nanowires

The present invention provides a method for aligning nanowires which can be used to fabricate devices comprising nanowires that has well-defined and controlled orientation independently on what substrate they are arranged on. The method comprises the steps of providing nanowires () and applying an electrical field (E) over the population of nanowires (), whereby an electrical dipole moment of the nanowires makes them align along the electrical field (E). Preferably the nanowires are dispersed in a fluid during the steps of providing and aligning. When aligned, the nanowires can be fixated, preferably be deposition on a substrate (). The electrical field can be utilized in the deposition. Pn-junctions or any net charge introduced in the nanowires () may assist in the aligning and deposition process. The method is suitable for continuous processing, e.g. in a roll-to-roll process, on practically any substrate materials and not limited to substrates suitable for particle assisted growth.

A method of forming a nanostructure having the form of a tree, comprises a first stage and a second stage. The first stage includes providing one or more catalytic particles on a substrate surface, and growing a first nanowhisker via each catalytic particle. The second stage includes providing, on the periphery of each first nanowhisker, one or more second catalytic particles, and growing, from each second catalytic particle, a second nanowhisker extending transversely from the periphery of the respective first nanowhisker. Further stages may be included to grow one or more further nanowhiskers extending from the nanowhisker(s) of the preceding stage. Heterostructures may be created within the nanowhiskers. Such nanostructures may form the components of a solar cell array or a light emitting flat panel, where the nanowhiskers are formed of a photosensitive material. A neural network may be formed by positioning the first nanowhiskers close together so that adjacent trees contact one another through nanowhiskers grown in a subsequent stage, and heterojunctions within the nanowhiskers create tunnel barriers to current flow.

Nanostructures formed of branched nanowhiskers and methods of producing the same

A fast method of creating nanostructures comprising the steps of forming one or more electrically-charged regions () of predetermined shape on a surface () of a first material, by contacting the regions with a stamp for transferring electric charge, and providing electrically charged nanoparticles () of a second material, and permitting the particles to flow in the vicinity of the regions, to be deposited on the regions.

Particle deposition apparatus and methods for forming nanostructures

A single electron tunnelling device is formed by positioning between first and second electrodes a particle formed of a material having a first conductivity characteristic having a surface layer of a material of a second conductivity characteristic, the thickness of said layer being sufficiently small to support quantum mechanical tunnelling therethrough.

Growing community of inventors

Lund, Sweden

Knut Deppert