Trikon Holdings Limited

Trikon Technologies Limited

Knut Beekman

Paul Rich

Claire Louise Wiggins

Robert John Wilby

John Macneil

Jashu Patel

A silicon nitride film, for example, is deposited by introducing into a plasma region of a chamber a silicon containing gas, molecular nitrogen and sufficient hydrogen to dissociate the nitrogen to allow the silicon and nitrogen to react to form a silicon nitride film on a surface adjacent the plasma region. The thus deposited film may then be subjected to an activation anneal.

Methods of forming nitride films

This invention relates to a method of depositing a layer on an exposed surface of an insulating layer of material. The method includes treating the exposed surface with hydrogen or a gaseous source of hydrogen in the presence of a plasma, prior to or during deposition of a metallic layer.

Method of depositing a layer

Method and depositing a layer

This invention relates semiconductor devices incorporating an intermediate etch stop layer between two dielectric layers in which the dielectric constant of each of the layers is k&lE;3.5 and the etch stop layer has a selectivity of at least 2.5:1 relative to the upper layer. Methods and apparatus for forming nitrogen doped silicon carbide films, for example, for use as etch stop layers are described.

Methods and apparatus for forming a film on a substrate

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Yatton, United Kingdom

Knut Beekman