Cypress Semiconductor Corporation

Klyoko Keuchi

Krishnaswamy Ramkumar

James A Hunter

Mira Ben-Tzur

Thurman John Rodgers

Mike Bruner

In one embodiment, a sacrificial layer is deposited over a base layer. The sacrificial layer is used to define a subsequently formed floating metal structure. The floating metal structure may be anchored into the base layer. Once the floating metal structure is formed, the sacrificial layer surrounding the floating metal structure is etched to create a unity-k dielectric region separating the floating metal structure from the base layer. The unity-k dielectric region also separates the floating metal structure from another floating metal structure. In one embodiment, a noble gas fluoride such as xenon difluoride is used to etch a sacrificial layer of polycrystalline silicon.

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Sunnyvale, CA, United States of America

Klyoko Keuchi