Infineon Technologies Ag

Klemens Prügl

Berthold Schuderer

Jürgen Förster

Jürgen Zimmer

A method in which a base layer is deposited in a contact hole region under a protective gas, where base layer contains a nitride as main constituent. After the deposition of the base layer, a covering layer is deposited under gaseous nitrogen. An adhesion promoting layer results which is simple to produce and has good electrical properties.

Method for filling a contact hole and integrated circuit arrangement with contact hole

An integrated circuit includes two first adjacent magneto-resistive effect (xMR) structures. Each first xMR structure is configured to sense a first magnetic field direction. The integrated circuit includes two second adjacent xMR structures at a distance from the two first xMR structures. Each second xMR structure is configured to sense a second magnetic field direction. The two first xMR structures and the two second xMR structures are configured for in-plane magnetic field components perpendicular to the first magnetic field and the second magnetic field and phase shifted by approximately 90&#xb0; from the first magnetic field and the second magnetic field acting on the two first xMR structures and the two second xMR structures.

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Wuppertal, Germany

Klemens Prügl