Infineon Technologies Ag

Infineon Technologies Austria Ag

Klemens Pruegl

Juergen Zimmer

Stefan Kolb

Andreas Strasser

Wolfgang Raberg

Anton Mauder

Bernhard Winkler

Dirk Meinhold

Hermann Gruber

Dirk Offenberg

Uwe Hoeckele

Ines Uhlig

Emanuele Bruno Bodini

Felix Braun

Guenther Ruhl

Ralf-Rainer Schledz

Norbert Thyssen

Olaf Kuehn

Hans-Joachim Schulze

Franz Hirler

Hans Weber

Helmut Strack

Hermann Wendt

Carsten Ahrens

Wolfgang Lehnert

Carsten Schaeffer

Gunther Mackh

Werner Robl

Rudolf Berger

Armin Satz

Michael Nelhiebel

Raimund Foerg

Dieter Suess

Thomas Popp

Hubert Brueckl

Andreas Zankl

Roland Meier

Michael Fugger

Bernhard Endres

Tobias Wurft

Anton Bachleitner Hofmann

Exemplary embodiments are directed to magnetoresistive sensors and corresponding fabrication methods for magnetoresistive sensors. One example of a magnetoresistive sensor includes a layer stack, wherein the layer stack includes a reference layer having a fixed reference magnetization, wherein the fixed reference magnetization has a first magnetic orientation. The layer stack furthermore includes a magnetically free system of a plurality of layers, wherein the magnetically free system has a magnetically free magnetization, wherein the magnetically free magnetization is variable in the presence of an external magnetic field, and wherein the magnetically free magnetization has a second magnetic orientation in a ground state. The magnetically free system has two ferromagnetic layers and an interlayer, wherein the interlayer is arranged between the two ferromagnetic layers and includes magnesium oxide. The layer stack furthermore includes a barrier layer, which is arranged between the reference layer and the magnetically free system and includes magnesium oxide.

Magnetoresistive sensor and fabrication method for a magnetoresistive sensor

A magnetoresistive sensor includes a first non-magnetic layer, a second non-magnetic layer, and a magnetic free bi-layer. The magnetic free bi-layer is disposed between first non-magnetic layer and the second non-magnetic layer, the magnetic free bi-layer including a first magnetic free layer coupled to a second magnetic free layer. The first magnetic free layer is coupled to the first non-magnetic layer, and the second magnetic free layer is coupled to the second non-magnetic layer. The second non-magnetic layer comprises a non-magnetic material having an atomic radius within 10% of an atomic radius of at least one of the first magnetic free layer and the second magnetic free layer.

Magnetoresistive sensor with reduced stress sensitivity

According to various embodiments, a device may include: a semiconductor region; a metallization layer disposed over the semiconductor region; and a self-organizing barrier layer disposed between the metallization layer and the semiconductor region, wherein the self-organizing barrier layer comprises a first metal configured to be self-segregating from the metallization layer.

Semiconductor device and a method of forming the semiconductor device

Techniques are discloses regarding methods of manufacturing an imager as well as an imager device.

Method of manufacturing an imager and imager device

Embodiments relate to xMR sensors, in particular AMR and/or TMR angle sensors with an angle range of 360 degrees. In embodiments, AMR angle sensors with a range of 360 degrees combine conventional, highly accurate AMR angle structures with structures in which an AMR layer is continuously magnetically biased by an exchange bias coupling effect. The equivalent bias field is lower than the external rotating magnetic field and is applied continuously to separate sensor structures. Thus, in contrast with conventional solutions, no temporary, auxiliary magnetic field need be generated, and embodiments are suitable for magnetic fields up to about 100 mT or more. Additional embodiments relate to combined TMR and AMR structures. In such embodiments, a TMR stack with a free layer functioning as an AMR structure is used. With a single such stack, contacted in different modes, a high-precision angle sensor with 360 degrees of uniqueness can be realized.

XMR angle sensors

An embodiment relates to a magnetic sensor device () comprising a magneto-resistive structure (). The magneto-resistive structure () comprises a magnetic free layer () configured to spontaneously generate a closed flux magnetization pattern in the free layer (). The magneto-resistive structure () also comprises a magnetic reference layer () having a non-closed flux reference magnetization pattern. The magnetic sensor device () further comprises a current generator () configured to generate an electric current in one or more layers of the magneto-resistive structure (). The electric current has a non-zero directional component perpendicular to the reference magnetization pattern.

Magnetic sensor device and method for a magnetic sensor device having a magneto-resistive structure

The present disclosure relates to a magnetic sensor device having at least one magneto-resistive structure. The magneto-resistive structure comprises a magnetic free layer configured to generate a closed flux magnetization pattern in the free layer, and a magnetic reference layer having non-closed flux reference magnetization pattern; and a magnetic flux concentrator configured to increase a flux density of an external magnetic field in the magnetic free layer.

Magnetic sensor device and magnetic sensing method

Embodiments relate to microelectromechanical systems (MEMS) and more particularly to membrane structures comprising pixels for use in, e.g., display devices. In embodiments, a membrane structure comprises a monocrystalline silicon membrane above a cavity formed over a silicon substrate. The membrane structure can comprise a light interference structure that, depending upon a variable distance between the membrane and the substrate, transmits or reflects different wavelengths of light. Related devices, systems and methods are also disclosed.

Membrane structures for microelectromechanical pixel and display devices and systems, and methods for forming membrane structures and related devices

Embodiments related to a method of manufacturing of an imager and an imager device are shown and depicted.

Self-organizing barrier layer disposed between a metallization layer and a semiconductor region

In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.

System and method for integrated inductor

Sensor devices and methods are provided where a second magnetoresistive sensor stack is provided on top of a first magnetoresistive sensor stack.

XMR sensor device

A magnetoresistive device that can include a magnetoresistive stack and an etch-stop layer (ESL) disposed on the magnetoresistive stack. A method of manufacturing the magnetoresistive device can include: depositing the magnetoresistive stack, the ESL and a mask layer on a substrate; performing a first etching process to etch a portion of the mask layer to expose a portion of the ESL; and performing a second etching process to etch the exposed portion of the ESL. The second etching process can also etch a portion of the magnetoresistive stack. The first and second etching processes can be different. For example, the first etching process can be a reactive etching process and the second etching process can be a non-reactive etching process.

Magnetoresistive devices and methods for manufacturing magnetoresistive devices

In various embodiments, a method for processing a carrier is provided. The method for processing a carrier may include: forming a first catalytic metal layer over a carrier; forming a source layer over the first catalytic metal layer; forming a second catalytic metal layer over the source layer, wherein the thickness of the second catalytic metal layer is larger than the thickness of the first catalytic metal layer; and subsequently performing an anneal to enable diffusion of the material of the source layer forming an interface layer adjacent to the surface of the carrier from the diffused material of the source layer.

Method for processing a carrier and an electronic component

Growing community of inventors

Wuppertal, Germany

Klemens Pruegl