Infineon Technologies Ag

Klaus Von Arnim

Christian Pacha

Joerg Berthold

Christian Cornelius Russ

Gernot Langguth

David Alvarez

Krzysztof Domanski

Wolfgang Soldner

Jörg Berthold

Hans-Joachim Barth

Thomas Schulz

Ralf Peter Brederlow

Sergei Postnikov

Florian Bauer

Techniques and architectures corresponding to electrostatic discharge clamping circuits with tracing circuitry are described.

Electrostatic discharge clamping devices with tracing circuitry

Techniques and architectures corresponding to electrostatic discharge blocking circuits are described.

Electrostatic discharge blocking circuits

One or more embodiments relate to an apparatus comprising: a first transistor including a channel in a fin; and a second transistor including a channel in a fin, the channel of the first transistor being doped with a first dopant of a first polarity and counter-doped with a second dopant of a second polarity opposite to the first polarity, a concentration of the first dopant being approximately equal to a concentration of the second dopant, wherein the first transistor and the second transistor are of a same conductivity type.

Apparatus comprising a first transistor including a channel in a fin and a second transistor including a channel in a fin

One or more embodiments relate to an apparatus comprising: a first transistor including a fin; and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor.

Transistor with reduced charge carrier mobility

One or more embodiments of the invention relate to a method comprising: treating a fin of a first n-channel access transistor in a static random access memory cell to have a lower charge carrier mobility than a fin of a first n-channel pull-down transistor in a first inverter in the memory cell, the first n-channel access transistor being coupled between a first bit line and a first node of the first inverter; and treating a fin of a second n-channel access transistor in the memory cell to have a lower charge carrier mobility than a fin of a second n-channel pull-down transistor in a second inverter in the memory cell, the second n-channel access transistor being coupled between a second bit line and a second node of the second inverter.

Method of manufacture transistor with reduced charge carrier mobility

A device includes a first transistor including a fin and a second transistor including a fin, the fin of the first transistor having a lower charge carrier mobility than the fin of the second transistor. In a method, the fin of the first transistor is treated to have a lower charge carrier mobility than the fin of the second transistor.

A method of fabricating a semiconductor device including depositing a hardmask layer on a layer of the semiconductor device, selectively etching a pattern of continuous lines in the hardmask layer, depositing an antireflective coating over remaining portions of the hardmask layer, depositing a photoresist layer on the antireflective coating, patterning the photoresist layer with a plurality of isolation trenches via a lithography process, each of the isolation trenches extending perpendicular to and crossing portions of at least one of the continuous lines of the underlying hardmask layer, and with each isolation trench having an initial width. The method further includes reducing the width of each of the isolation trenches from the initial width to desired width via a shrinking process, etching the antireflective coating underlying the isolation trenches to expose intersecting portions of the underlying continuous lines, and etching the exposed intersecting portions of the underlying continuous lines of the hardmask layer to form a pattern of line segments having line ends separated by the desired width.

Method of fabricating a semiconductor device including a pattern of line segments

A circuit array includes a plurality cells, wherein each cell has at least one group of odd fins. The cells may be arranged in a repeating pattern that includes mirror images of the pattern. A plurality of fin forming regions are provided about which the fins are formed for the dual fin and single fin transistors.

MuGFET array layout

Pulse-generator circuit for generating an input signal for a flip-flop circuit from a clock-pulse signal and a data signal. The circuit includes a control unit for controlling a clock-pulse field effect transistor, a logic field effect transistor and a feedback field effect transistor. To generate the input signal, the control unit is configured in such a way that the clock-pulse field effect transistor is controlled chronologically after the logic field effect transistor and the feedback field effect transistor, thus generating the flip-flop signal.

Pulse-generator circuit and circuit arrangement

In an embodiment of the invention, a CMOS circuit arrangement is provided. The CMOS circuit arrangement includes a PMOS logic circuit providing a logic function, having PMOS field effect transistors, wherein a first operating potential is fed to an input of a PMOS logic circuit, an NMOS logic circuit providing the logic function, having NMOS field effect transistors, a first clock transistor, the first source/drain terminal of which is coupled to an input of the NMOS logic circuit, wherein a clock signal is applied to the gate terminal of the first clock transistor, and wherein a second operating potential is fed to the second source/drain terminal. An output of the PMOS logic circuit and an output of the NMOS logic circuit are coupled to one another. Furthermore, an inverter circuit is coupled to the output of the PMOS logic circuit and to the output of the NMOS logic circuit. At least a portion of the NMOS field effect transistors of the NMOS logic circuit have a first threshold voltage and at least a portion of the PMOS field effect transistors of the PMOS logic circuit have a third threshold voltage. The first clock transistor has a second threshold voltage. The first threshold voltage is lower than the second threshold voltage.

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Munich, Germany

Klaus Von Arnim