Osram Opto Semiconductors Gmbh

Osram Gmbh

Osram Opto Semiconductor Gmbh

Osram Opto Semi-conductors Gmbh Co. Ohg

Klaus Streubel

Ralph Wirth

Norbert Linder

Stefan Illek

Wolfgang Schmid

Karl Engl

Walter Wegleiter

Peter Stauss

Berthold Hahn

Jürgen Moosburger

Reiner Windisch

Andreas Ploessl

Norwin Von Malm

Georg Bogner

Matthias Sabathil

Stefan Grötsch

Markus Heinrich Klein

Lutz Höppel

Tony Albrecht

Patrick Rode

Krister Bergenek

Stefan Groetsch

Julius Muschaweck

Martin Strassburg

Hans-Jürgen Lugauer

Franz Eberhard

Arndt Jaeger

Andreas Plössl

Andreas Plößl

Magnus Ahlstedt

Werner Kuhlmann

Günther Grönninger

Peter Heidborn

Günter Kirchberger

Guenter Kirchberger

Siegmar Kugler

Christian Karnutsch

Mark Hampel

Walter Wegletter

Markus Klein

Stefan GRÖTSCH

An optoelectronic semiconductor chip () is disclosed comprising a thin-film semiconductor body (), which comprises a semiconductor layer sequence () having an active region () suitable for generating radiation, and comprising a carrier layer (), which is formed on the semiconductor layer sequence and carries the thin-film semiconductor body.

Optoelectronic semiconductor chip and method for producing it

An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.

Optoelectronic projection device

A radiation-emitting semiconductor chip includes: a carrier and a semiconductor body with a semiconductor layer sequence including an active region that generates radiation, a first semiconductor layer and a second semiconductor layer; wherein the active region is arranged between the first semiconductor layer and the second semiconductor layer; the first semiconductor layer is arranged on a side of the active region which faces away from the carrier; the semiconductor body comprises at least one recess which extends through the active region; the first semiconductor layer is electrically conductively connected to a first connection layer extending in the recess from the first semiconductor layer in a direction of the carrier; and the first connection layer is electrically connected to the second semiconductor layer via a protective diode.

Radiation-emitting semiconductor chip and method for producing a radiation-emitting semiconductor chip

A method for the connection of two wafers in which a contact area is formed between the two wafers by placing the two wafers one on top of the other. The contact area is heated locally and for a limited time. A wafer arrangement comprises two wafers which have been placed one on top of the other and between whose opposite surfaces a contact area is located. The wafers are connected to one another at selected areas of the contact area.

Method for the connection of two wafers, and a wafer arrangement

A method of producing a radiation-emitting thin film component includes providing a substrate, growing nanorods on the substrate, growing a semiconductor layer sequence with at least one active layer epitaxially on the nanorods, applying a carrier to the semiconductor layer sequence, and detaching the semiconductor layer sequence and the carrier from the substrate by at least partial destruction of the nanorods.

Method of producing a radiation-emitting thin film component and radiation-emitting thin film component

A luminescent diode chip includes a semiconductor body, which produces radiation of a first wavelength. A luminescence conversion element produces radiation of a second wavelength from the radiation of the first wavelength. An angular filter element reflects radiation that impinges on the angular filter element at a specific angle in relation to a main direction of emission back in the direction of the semiconductor body.

Luminescent diode chip with luminescence conversion element and angular filter element

A radiation-emitting component () having a layer stack () which is based on a semiconductor material and which has an active layer sequence () for generating electromagnetic radiation, and a filter element () which is arranged after the active layer sequence () in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element ().

Radiation emitting element

An LED semiconductor body includes a number of at least two radiation-generating active layers. Each active layer has a forward voltage, wherein the number of active layers is adapted to an operating voltage in such a way that the voltage dropped across a series resistor connected in series with the active layers is at most of the same magnitude as a voltage dropped across the LED semiconductor body. The invention furthermore describes various uses of the LED semiconductor body.

LED semiconductor body and use of an LED semiconductor body

A radiation detector is disclosed with a detector arrangement, which has a plurality of detector elements, by means of which a detector signal is obtained during operation of the radiation detector, and with a control device, wherein the detector elements each have a spectral sensitivity distribution, and are suited for generating signals, at least one detector element comprises a compound semiconductor material, and this detector element is designed for detecting radiation in the visible spectral region, the radiation detector is designed such that the sensitivity distributions of the detector elements are used to form different spectral sensitivity channels of the radiation detector, a channel signal assigned to the respective sensitivity channel can be generated in these sensitivity channels using the detector elements, and the control device is designed such that the contributions of different channel signals to the detector signal of the radiation detector are differently controlled.

Radiation detector

An LED chip is specified that comprises at least one current barrier. The current barrier is suitable for selectively preventing or reducing, by means of a reduced current density, the generation of radiation in a region laterally covered by the electrical connector body. The current spreading layer contains at least one TCO (Transparent Conductive Oxide). In a particularly preferred embodiment, at least one current barrier is contained which comprises material of the epitaxial semiconductor layer sequence, material of the current spreading layer and/or an interface between the semiconductor layer sequence and the current spreading layer. A method for producing an LED chip is also specified.

Luminescence diode chip with current spreading layer and method for producing the same

An optoelectronic thin-film chip is specified, comprising at least one radiation-emitting region () in an active zone () of a thin-film layer () and a lens () disposed downstream of the radiation-emitting region (). The lens is formed by at least one partial region of the thin-film layer (), the lateral extent (&#x3a6;) of the lens () being greater than the lateral extent of the radiation-emitting region (&#x3b4;). A method for producing such an optoelectronic thin-film chip is furthermore specified.

Optoelectronic thin-film chip

A semiconductor substrate, of GaAs with a semiconductor layer sequence applied on top of the substrate. The semiconductor layer sequence comprises a plurality of semiconductor layers of AlGaAsPwith 0&#x2266;x&#x2266;1 and 0&#x2266;y&#x2266;1. A number of the semiconductor layers respectively comprising a phosphorus component x which is greater than in a neighboring semiconductor layer lying thereunder in the direction of growth of the semiconductor layer sequence. Two semiconductor layers directly preceding the uppermost semiconductor layer of the semiconductor layer sequence have a smaller lattice constant than the uppermost layer.

Semiconductor substrate of GaAs and semiconductor device

A method for the connection of two wafers (), in which a contact area () is formed between the wafers () by placing the two wafers one on top of the other, and in which the contact area () is heated locally and for a limited time. A wafer arrangement is also described in which two wafers () which have been placed one on top of the other and between whose opposite surfaces a contact area () is located. The wafers are connected to one another at selected areas () of their contact area.

The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.

Radiation-emitting semiconductor body for a vertically emitting laser and method for producing same

An optoelectronic chip having a semiconductor body (), which contains a radiation-emitting region (), and a partial region () in which the surface () of the semiconductor body () is curved convexly toward a carrier (). The lateral extent () of the radiation-emitting region () is less than the lateral extent (R) of the partial region (). A method for producing such a chip is also described.

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Laaber, Germany

Klaus Streubel