Robert Boschgmbh

Other

Seg Automotive Germany Gmbh

Klaus Heyers

Markus Lutz

Michael Offenberg

Horst Muenzel

Franz Laermer

Wilhelm Frey

Wolfgang Feiler

Dietrich Schubert

Bernhard Elsner

Christoph Treutler

Alexandra Boehringer

Ning Qu

Herbert Goebel

Steffen Schmidt

Stephan Schwaiger

Jan-Hendrik Alsmeier

Joerg Buth

Heribert Weber

Alfred Goerlach

Frank Schatz

Hans Hecht

Kurt Weiblen

Jiri Marek

Hans Braun

Wolfgang E Mueller

Eckhard Graf

Roland Mueller-Fiedler

Helmut Baumann

Juergen Kurle

Martin Zechnall

Peter Flohrs

Heinz Eisenschmid

Manfred Lembke

Dick Scholten

Martin Willmann

Peter Urbach

Werner Steiner

Joachim Rudhard

Heinz-Georg Vossenberg

Jie Ge

Horst Munzel

Andreas Lock

Manfred Moellendorf

Apostolos Tsakiris

Hans-Friedemann Kober

Christian Tobias Banzhaf

Martin Neuburger

Carsten Raudzis

Nicholas Buchan

Helmut Skapa

Hans-Ulrich Gruber

Michael Gundlach

Jochen Heusel

Alberto Martinez-Limia

Christoph Kampshoff

A trench transistor. The transistor including: a semiconductor region, a trench structure formed in the semiconductor region; a gate insulation layer and an electrically conductive gate layer formed on the gate insulation layer in the trench structure, and a gate contact, which is electrically conductively connected to the gate layer in an edge area of the trench transistor. A thickness of the gate insulation layer in the edge area of the trench transistor is greater than in an active area of the trench transistor.

Trench transistor

A power transistor cell including a layer arrangement, which includes a front side and a rear side, the front side being situated opposite the rear side. A trench extends starting from, and perpendicular to, the front side along a first direction into the layer arrangement. The trench extends at least into a current-spreading layer, and expands along a second direction, which is situated perpendicularly to the first direction. Field shielding areas are situated at least partially in the current-spreading layer, wherein source areas and field shielding contacting areas are situated alternatingly along the second direction. One portion each of the body areas is situated between each source area and each field shielding contacting area. The field shielding contacting areas connect the field shielding areas to first metal areas on the front side. The field shielding contacting areas make contact at least partially with side faces of the trench.

Power transistor cell and power transistor having field shielding contacting areas connecting field shielding areas to metal areas

A device having a first gearing part for meshing with a second gearing part, in particular a starter device having a pinion for meshing with a ring gear of an internal combustion engine, in which at least one arrangement is provided whereby a motion state of the first gearing part and a motion state of the second gearing part are ascertainable. A method for operating a device having a first gearing part for meshing with a second gearing part, in particular a starter device having a pinion for meshing with a ring gear of an internal combustion engine, in which at least one arrangement is provided whereby a motion state of the first gearing part and a motion state of the first gearing part and a motion state of the second gearing part are ascertained.

Device having a first gearing part for meshing with a second gearing part, in particular a starting device having a pinion for meshing with a ring gear of an internal combustion engine, and a method for operating a device

A semiconductor component and a method for manufacturing such a semiconductor component which has a resistance behavior which depends heavily on the temperature. This resistance behavior is obtained by a special multi-layer structure of the semiconductor component, one layer being designed in such a way that, for example, multiple p-doped regions are present in an n-doped region, said regions being short-circuited on one side via a metal-plated layer. For example, the semiconductor component may be used for reducing current peaks, by being integrated into a conductor. In the cold state, the semiconductor component has a high resistance which becomes significantly lower when the semiconductor component is heated as a result of the flowing current.

Semiconductor component

An electric motor, in particular a starter device for internal combustion engines in which a current-limiting electric resistor () with a negative temperature coefficient is connected at the beginning of the main current path () of an electromagnetically excitable rotor () of the electric motor (). The electric resistor () contains at least one monocrystalline semiconductor.

Electric motor

A sensor array, in particular a micromechanical sensor array, and methods for manufacturing the sensor array are provided, which sensor array includes a sensor section for supplying certain sensor signals, and a cover section provided on the sensor section to form a hermetically sealed sensor interior. An electronic analyzer device is at least partially integratable into cover section for analysis of the sensor signals, and electrically connectable to a corresponding circuit device of the sensor section.

Sensor arrangement, in particular a micro-mechanical sensor arrangement

A process for manufacturing a membrane sensor over a silicon substrate, preferably a thermal membrane sensor. A thin layer of silicon carbide or silicon nitride is deposited over an area of porous silicon formed in the surface of the substrate, and then openings that extend as far as the layer of porous silicon are formed in the silicon carbide or silicon nitride layer via a dry etching process. Next, semiconductor structures and conductor path structures are implanted into the upper surface of the membrane layer via lithographic steps, and then the sacrificial layer of porous silicon is removed using a suitable solvent such as ammonia. Thus an empty space that thermally isolates the sensor membrane from the substrate is created beneath the membrane layer.

Thermal membrane sensor and method for the production thereof

A field effect transistor suited for use as a sensor element or in an acceleration sensor is described. For this purpose, the field effect transistor within a planar substrate has a drain area and a source area, which are separated from each other by a channel region. In addition, a gate electrode is provided which is arranged so as to be substantially self-supporting above the substrate over the channel region. The gate electrode is flexibly supported such that an external force acting upon it which has a component acting parallel to the surface of the substrate causes a deflection of the gate electrode parallel to the surface of the substrate. A method is also described in which, in a first method step, an integrated circuit having a drain area, a source area, and a channel region is manufactured or made available in a CMOS process, and thereafter, in a second method step, the substantially self-supporting gate electrode is produced on the integrated circuit using electroplating additive technology.

Field effect transistor, especially for use as a sensor element or acceleration sensor

In a method for the production of a field-effect structure and a field-effect structure, a movable gate structure is arranged above a gate region in a substrate between a drain and a source. The gate region is covered with a gate oxide. The movable gate structure is created from silicon-germanium and in an intermediate step of the production method is arranged on a germanium sacrificial layer on the gate oxide.

Method for the production of a field-effect structure

Method and device for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate

With a sensor and method, it is possible for platinum resistor elements to be used advantageously as heating elements, temperature sensors, printed circuit traces, or as chemically resistant electron beam sensitive layers. To ensure a long-lasting adhesion of the platinum resistance layer to a dielectric substrate, even during exposure to temperatures which are elevated over ambient temperature and under dry and most atmospheric conditions, a thin adhesion layer of platinum silicide, for example, is deposited between the platinum resistance layer and the dielectric substrate. Resistor elements patterned from the platinum layer can advantageously be used in temperature sensors, mass flow sensors, chemical sensors, gas sensors, or humidity sensors.

Sensor and method for manufacturing a sensor

A sensor has a membrane, on which at least one resistor element is situated. The membrane has a membrane layer which is composed of a plurality of partial layers. In addition, a covering layer is provided which is composed of a plurality of partial layers. The partial layers of the membrane and the covering layer are selected so that both in the membrane and in the covering layer light tensile stresses are set, the tensile stresses preferably being roughly the same.

Sensor having a membrane

A sensor has a thin film element, the thin film element having a temperature-dependent electrical resistance. The thin film element includes a platinum layer, which is doped with zircon or zircon oxide. The thin film element can be arranged on a membrane to create a mass airflow sensor.

Sensor having a thin film element

An acceleration sensor is composed of a three-layer system. The acceleration sensor and conductor tracks are patterned out of the third layer. The conductor tracks are electrically isolated from other regions of the third layer by recesses and electrically insulated from a first layer by a second electrically insulating layer. In this manner, a simple electrical contacting is achieved, which is configured out of a three-layer system. One exemplary application of the acceleration sensor includes mounting the acceleration sensor on a vibrational system of an rpm (rate-of-rotation sensor). This simplifies the manufacturing of an rpm sensor, since the vibrational system and the acceleration sensor are configured out of a three-layer system, wherein the conductor tracks are run into the frame of the rpm sensor in which the vibrational system is suspended, so as to allow excursion.

Acceleration sensor

A method for fabricating metal micropatterns. Trenches are introduced into a polymer layer. These trenches are filled with the metal micropatterns using an electroplating process. Before the deposition of the metal micropatterns, the side walls of the trenches are covered with insulating layers which adhere to the metal micropatterns after the polymer layer is removed.

Method for fabricating metal micropatterns

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Reutlingen, Germany

Klaus Heyers