Infineon Technologies Ag

Qimonda Ag

Siemens Aktiengesellschaft

Infineon Technologies Austria Ag

Klaus Elian

Horst Theuss

Rainer Markus Schaller

Thomas Mueller

Guenther Ruhl

Jochen Dangelmaier

Matthias Eberl

Georg Meyer-Berg

Cyrus Ghahremani

Tobias Werth

Michael Sebald

James Sterling

Derek Debie

Fabian Merbeler

Jens G Pohl

Volker Strutz

Irmgard Escher-Poeppel

Mathias Vaupel

Ludwig Heitzer

Rainer Leuschner

Stefan Kolb

Christian Geissler

Christoph Steiner

Adolf Koller

Manfred Fries

Helmut Wietschorke

Michael Weber

Emanuel Stoicescu

Martin Petz

Costin Batrinu

Andreas Allmeier

Rafael Abargues

Thorsten Meyer

Thoralf Kautzsch

Juergen Hoegerl

Carsten Ahrens

Dirk Meinhold

Maciej Wojnowski

David Tumpold

Franz Michael Darrer

Bernhard Rieder

Franz-Peter Kalz

Albert Auburger

Werner Roessler

Johann Strasser

Johannes Lodermeyer

Christoph Hohle

Georg Ernst

Ernst-Christian Richter

Tue Fatt David Wee

Manfred Schindler

Johannes Kretz

Matthias Rose

Alexander Glas

Renate Hofmann

Walter Hartner

Oskar Neuhoff

Uwe Schindler

Franz Gabler

Stephan Auer

Ben Rosam

Stefan Hien

Tuncay Erdoel

Sie Boo Chiang

Werner Breuer

Chew Theng Tai

Franz Stegerer

Beng-Keh See

Alexander Spielbauer

Ingrid Bollmann

Choo Tian Ooi

Mohd Hirzarul Hafiz Mohd Tahir

Marco Müller

Kang-Hoon Choi

Frank Thrum

Armelle Vix

Ewald Guenther

Ewald Gunther

Christian Irrgang

Fabian Streb

Thomas Müller

Mohanraj Soundara Pandian

The application relates to a semiconductor device for particle measurement having a cavity housing and a MEMS chip arranged inside the cavity housing. The housing includes a first opening, via which the cavity is connected to the surroundings and in which a first grating is arranged, which is capable by setting it to a first electrical potential of attracting particles from the surroundings and/or electrically charging them. The MEMS chip includes a membrane facing toward the first opening, which is capable by setting it to a second electrical potential of attracting particles. The application furthermore relates to a method for operating a semiconductor device having a cavity housing and a MEMS chip arranged inside the cavity housing.

Semiconductor device for particle measurement and method for operating the semiconductor device

An ultrasonic touch sensor includes a touch structure having a touch surface with a plurality of sensitive areas, a pixel array of capacitive ultrasonic transducers, and a sensor circuit. Each pixel includes a respective ultrasonic transmitter and a respective ultrasonic receiver and is configured to monitor for a touch at a respective first sensitive area and at a respective second sensitive area. Moreover, each pixel is configured to generate a measurement signal that is representative of a first respective ultrasonic reflected wave reflected by the touch interface at the respective first sensitive area or that is representative of a second respective ultrasonic reflected wave reflected by the touch interface at the respective second sensitive area. The sensor circuit is configured to determine whether the measurement signal of a respective pixel corresponds to the respective first sensitive area or to the respective second sensitive area associated with the respective pixel.

Capacitive micromachined ultrasonic transducer (CMUT) multi-touch and slider detection with improved pixel area coverage and ultrasonic feedback by a same pixel array

An ultrasonic transducer includes at least one ultrasonic transducer element, a semiconductor chip that includes the ultrasonic transducer element, and a housing. The semiconductor chip is arranged in the housing. The semiconductor chip is embedded in a dimensionally stable encapsulation, wherein a contact surface of the dimensionally stable encapsulation is configured for acoustically coupling the ultrasonic transducer to a casing. Additionally, an ultrasonic transducer system and a method for fitting the ultrasonic transducer or ultrasonic transducer system are provided.

Ultrasonic transducer

One example implementation of a mirror system comprises a carrier, and a first chip package arranged on a surface of the carrier and comprising a first MEMS mirror. Furthermore, the mirror system comprises a second chip package arranged on the surface of the carrier and comprising a second MEMS mirror. The mirror system furthermore comprises a reflective element arranged over the surface of the carrier and above the first chip package and the second chip package in such a way that a radiation that is incident in the mirror system and is reflected by the first MEMS mirror in the direction of the reflective element is reflected by the reflective element in the direction of the second MEMS mirror.

Mirror systems

An ultrasonic touch sensor is proposed for attachment to a casing, having a semiconductor chip including a substrate side and a component side, the semiconductor chip including an ultrasonic transducer element and the ultrasonic transducer element being arranged on the component side, having an acoustic coupling medium covering the semiconductor chip at least in the region of the ultrasonic transducer element, having electrical contact elements for controlling the ultrasonic transducer element, and the electrical contact elements being arranged on the component side of the semiconductor chip.

Ultrasonic touch sensor

A sensor system for attachment to a casing includes at least one sensor element, where the sensor element is configured for detecting an environment property of an environment which, with the sensor system attached to the casing, is situated on the opposite side of the casing with respect to the sensor system. The sensor system also includes an encapsulation layer, where the sensor element is embedded in the encapsulation layer, and where the encapsulation layer has a contact surface for attaching the sensor system to the casing.

Integration of a sensor system in a casing

A radiation source device includes at least one membrane layer, a radiation source structure to emit electromagnetic or infrared radiation, a substrate and a spacer structure, wherein the substrate and the at least one membrane form a chamber, wherein a pressure in the chamber is lower than or equal to a pressure outside of the chamber, and wherein the radiation source structure is arranged between the at least one membrane layer and the substrate.

Radiation source device

What is proposed is an ultrasonic touch sensor having a contact surface for attaching the ultrasonic touch sensor to a casing, having a first ultrasonic transducer element, having a first semiconductor chip, wherein the first semiconductor chip comprises the first ultrasonic transducer element, wherein the first semiconductor chip is potted into a potting compound in such a way that a first cutout is formed from the first ultrasonic transducer element to the contact surface of the ultrasonic touch sensor, and wherein the potting compound forms the housing of the ultrasonic touch sensor.

A method for producing sensor devices includes generating a semiconductor wafer having a plurality of sensor chips, wherein each sensor chip comprises a micro-electromechanical systems (MEMS) structure arranged at a main surface of the semiconductor wafer; forming a plurality of gas-permeable covers over the main surface of the semiconductor wafer, wherein each gas-permeable cover covers a corresponding MEMS structure of the MEMS structures and forms a cavity above the corresponding MEMS structure; and singulating the semiconductor wafer into a plurality of sensor devices.

Sensor devices with gas-permeable cover and associated production methods

A touch sensor includes a touch structure including a touch interface and an inner interface arranged opposite to the touch interface; a capacitive ultrasonic transmitter arranged inside an enclosed interior volume and configured to transmit an ultrasonic transmit wave towards the touch structure; a capacitive ultrasonic receiver arranged inside the enclosed interior volume and configured to receive at least one ultrasonic reflected wave produced from the ultrasonic transmit wave via internal reflection; a coupling medium that fills an area between the inner interface and the capacitive ultrasonic receiver, wherein an external force applied to the touch interface is configured to impart an internal pressure onto the capacitive ultrasonic receiver through the coupling medium; and a sensor circuit configured to convert the at least one ultrasonic reflected wave into a measurement signal and detect the external force based on the measurement signal.

Ultrasonic touch sensors and capacitive pressure sensing microelectromechanical system fusion

A sensor device contains at least one sensor chip having at least one MEMS structure arranged at a main surface of the at least one sensor chip, wherein the at least one sensor chip is configured to transmit ultrasonic signals and/or to receive ultrasonic signals. The sensor device further contains an acoustic coupling medium arranged selectively on the at least one MEMS structure, wherein the acoustic coupling medium is configured to decouple an ultrasonic signal to be emitted from the at least one MEMS structure and/or to inject a received ultrasonic signal into the at least one MEMS structure. The acoustic coupling medium only partially covers the main surface of the at least one sensor chip.

Sensor devices having an acoustic coupling medium, and associated manufacturing methods

An ultrasonic touch sensor includes a housing having a package cavity; an ultrasonic transmitter arranged within the package cavity, and configured to transmit an ultrasonic transmit wave; an ultrasonic receiver arranged within the package cavity, and configured to receive an ultrasonic reflected wave produced by a reflection of the ultrasonic transmit wave and generate a measurement signal representative of the ultrasonic reflected wave; a measurement circuit arranged within the package cavity and coupled to the ultrasonic receiver, and configured to detect a touch or a non-touch based on the measurement signal; a light source configured to produce an activating light; and a coupling medium that fills or at least partially fills the package cavity. The coupling medium includes a luminescent material that is configured to be activated by the activating light to produce a backlight that is emitted from the package cavity.

Ultrasonic touch sensor with backlight

A radio-frequency device comprises a printed circuit board and a radio-frequency package having a radio-frequency chip and a radio-frequency radiation element, the radio-frequency package being mounted on the printed circuit board. The radio-frequency device furthermore comprises a waveguide component having a waveguide, wherein the radio-frequency radiation element is configured to radiate transmission signals into the waveguide and/or to receive reception signals via the waveguide. The radio-frequency device furthermore comprises a gap arranged between a first side of the radio-frequency package and a second side of the waveguide component, and a shielding structure, which is configured: to permit a relative movement between the radio-frequency package and the waveguide component in a first direction perpendicular to the first side of the radio-frequency package, and to shield the transmission signals and/or the reception signals in such a way that a propagation of the signals via the gap is attenuated or prevented.

Radio-frequency devices and methods for producing radio-frequency devices

An ultrasonic touch sensor includes: a covering having a contact face configured to receive a touch; a first ultrasonic transducer element; a first semiconductor chip comprising the first ultrasonic transducer element; a second ultrasonic transducer element; and an acoustic barrier formed between the first ultrasonic transducer element and the second ultrasonic transducer element.

A sensor device includes a sensor chip with a micro-electromechanical systems (MEMS) structure, wherein the MEMS structure is arranged at a main surface of the sensor chip, and a gas-permeable cover arranged over the main surface of the sensor chip, which covers the MEMS structure and forms a cavity above the MEMS structure.

Growing community of inventors

Alteglofsheim, Germany

Klaus Elian