U.S. Philips Corporation

Klaus Drews

Udo Bringmann

Detlef G Schon

Jens-Peter Krumme

A device for covering a substrate by means of both plasma chemical vapor deposition and by high-frequency cathode sputtering which, as a result of easily exchangeable individual devices to introduce gaseous substances into the reaction space as well as easily exchangeable individual devices for influencing the flow of the process gases within the reaction space, results in a very good uniformity of the layer thickness of the produced layers even when the operation has to be carried out at higher gas pressures and hence higher flow rates.

Device for coating a substrate by means of plasma-CVD or cathode

Substrate holder for etching thin films by means of an ion beam in which a driving device moves the surface of a substrate placed on a turntable with respect to the ion beam, which holder includes a friction disk which rotates in rolling contact with a surface of a driving disk carrying the turntable and is spaced from the axis of the driving disk by a distance equal to that at which the point of impact of the ion beam on the substrate is located.

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Halstenbek, Germany

Klaus Drews