Brown, Boveri & Cie Ag

Klaus Bunk

Arno Neidig

Jens Gobrecht

Georg F Wahl

Helmut Keser

Bernd Leukel

Werner Weidenauer

Karl-Heinz Thiele

A semiconductor power module includes a substrate formed of metallized ceramic, at least one semiconductor power component with a base surface soldered to the metallized ceramic, and at least one heat conduit integrated into the semiconductor power module. The heat conduit includes a condensation area having a larger surface than the base surface, over which dissipation heat from the semiconductor power component is distributed.

Semiconductor power module

A method for manufacturing insulated semiconductor power modules includes: presoldering a plurality of semiconductor sandwiches and a carrier unit including a metal base plate, ceramic insulating discs and connecting tabs with a high-melting solder in a first step; joining the semiconductor sandwiches and the carrier unit together with a low-melting solder in a second step; performing the first and second soldering steps without flux in a gas from the group consisting of hydrogen and forming gas; and preventing a mixture of the high-melting solder and the low-melting solder during the second step.

Method for manufacturing semiconductor power modules with an insulated

In directly bonding a metal to ceramics, in accordance with the invention, that surface of a metal component which is to be bonded by heating to a ceramic substrate is provided with parallel-running grooves before the preoxidation. The grooves make it possible to optimize the quantity of oxygen available at the bonding location and provide good flow behavior of the melt. As a result, a bond with good adhesion is obtained. Moreover, there is no formation of a thicker oxide layer on the free smooth surface of the metal component.

Process for the direct bonding of metal to ceramics

Method for the direct joining of metal pieces which have a surface metal oxide layer, to oxide ceramic substrates by heating the ceramic substrates covered with the metal pieces in an oxygen-containing atmosphere to a temperature above the eutectic temperature of the metal and the metal oxide, but below the melting temperature of the metal. The heating is carried out in a continuous heating furnace in a nitrogen atmosphere with an addition of oxygen of 20 to 50 vpm. The cooling-down in the continuous heating furnace takes place after the solidification of the eutectic melt, in a nitrogen atmosphere which has an oxygen content well below the 20 vpm.

Growing community of inventors

Worms, Germany

Klaus Bunk