Samsung Electronics Co., Ltd.

Lg Electronics Inc.

Sungkyunkwan University

Seoul National University

Cornell University

Kiyoung Lee

Jinseong Heo

Seongjun Park

Jaeho Lee

Eunkyu Lee

Sanghyun Jo

Sangyeob Lee

Hyeonjin Shin

Eunsun Kim

Byunghoon Na

Yongsung Kim

Woojin Lee

Dongwook Lee

Jooho Lee

Haeryong Kim

Sungmin Park

Myoungho Jeong

Woojong Yu

Jemin Woo

Yongseon Shin

Taeho Kim

Sungmin Kim

Sanghee Lee

Jin-seong Heo

Changseung Lee

Minhyun Lee

Euncheol Do

Kyuho Cho

Darrell G Schlom

Hyosik Mun

Dowon Song

Gerhard H Olsen

Zhe Wang

Natalie M Dawley

Craig J Fennie

Dongyeon Shin

Kookrin Char

Hahoon Lee

A capacitor includes a first electrode including a first reinforcement material having a perovskite crystal structure; and a first metallic material having a perovskite crystal structure; a second electrode on the first electrode; and a dielectric layer between the first electrode and the second electrode, wherein the first metallic material has greater a greater electronegativity than that of the first reinforcement material.

Capacitor and semiconductor device including the same

Provided are a capacitor, an electronic device including the same, and a method of manufacturing the same, the capacitor including a first thin-film electrode layer; a second thin-film electrode layer; a dielectric layer between the first thin-film electrode layer and the second thin-film electrode layer; and an interlayer between the dielectric and at least one of the first thin-film electrode layer or the second thin-film electrode layer, the interlayer including a same crystal structure type as and a different composition from at least one of the first thin film electrode layer, the second thin film electrode layer, or the dielectric layer, the interlayer including at least one of a anionized layer or a neutral layer.

Capacitor, electronic device including the same, and method of manufacturing the same

A thin film laminate structure, an integrated device including the same, and a method of manufacturing the thin film laminate structure are provided. The thin film laminate structure includes two or more dielectric layers, wherein at least one of the dielectric layers of the thin film laminate structure includes a compound represented by Formula 1 and having a perovskite-type crystal structure having a B/B' composition ratio different from that of a remainder of the dielectric layers:ABB′O  <Formula 1>

Thin film laminate structure, integrated device including the same, and method of manufacturing the thin film laminate structure

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO, wherein at least one of A and B in ABOis substituted and doped with another atom having a larger atom radius, and ABObecomes AA'BB′O(where x>=0, y>=0, at least one of x and y≠0, a dopant A′ has an atom radius greater than A and/or a dopant B′ has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

Thin film structure including dielectric material layer and electronic device including the same

Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

Image sensor for high photoelectric conversion efficiency and low dark current

The present disclosure discloses an artificial intelligence apparatus including an input interface configured to obtain input data, a sensing interface configured to obtain environment information, and one or more processors configured to classify an object by inputting the input data obtained from the input interface to an artificial intelligence model, in which the artificial intelligence model uses a first learning model and a second learning model which is connected with the first learning model and includes a plurality of output layers to respectively assign weights to the respective result values output by the plurality of output layers and combine the respective result values to which the weights are assigned to derive the final result.

Artificial intelligence apparatus using a plurality of output layers and method for same

Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

Optical sensor and image sensor including graphene quantum dots

Disclosed is an electronic apparatus. The electronic apparatus includes: a non-volatile memory having no internal controller; and a controller configured to: control the non-volatile memory, and transmit, to the non-volatile memory, first data and a generated first message authentication code (MAC). Accordingly, it is possible to efficiently defend against a replay attack in a non-volatile memory having no internal controller.

Electronic apparatus including non-volatile memory

A thin film structure including a dielectric material layer and an electronic device to which the thin film structure is applied are provided. The dielectric material layer includes a compound expressed by ABO, wherein at least one of A and B in ABOis substituted and doped with another atom having a larger atom radius, and ABObecomes AA'BB&#x2032;O(where x&#x3e;=0, y&#x3e;=0, at least one of x and y&#x2260;0, a dopant A&#x2032; has an atom radius greater than A and/or a dopant B&#x2032; has an atom radius greater than B) through substitution and doping. A dielectric material property of the dielectric material layer varies according to a type of a substituted and doped dopant and a substitution doping concentration.

A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

Broadband multi-purpose optical device and methods of manufacturing and operating the same

Example embodiments relate to a graphene device, methods of manufacturing and operating the same, and an electronic apparatus including the graphene device. The graphene device is a multifunctional device. The graphene device may include a graphene layer and a functional material layer. The graphene device may have a function of at least one of a memory device, a piezoelectric device, and an optoelectronic device within the structure of a switching device/electronic device. The functional material layer may include at least one of a resistance change material, a phase change material, a ferroelectric material, a multiferroic material, multistable molecules, a piezoelectric material, a light emission material, and a photoactive material.

Graphene device, methods of manufacturing and operating the same, and electronic apparatus including the graphene device

A thin-film structure includes a support layer and a dielectric layer on the support layer. The support layer includes a material having a lattice constant. The dielectric layer includes a compound having a Ruddlesden-Popper phase (ABX). where A and B each independently include a cation, X is an anion, and n is a natural number. The lattice constant of the material of the support layer may be less than a lattice constant of the compound.

Thin-film structure and method of manufacturing the same

Growing community of inventors

Seoul, South Korea

Kiyoung Lee