Matsushita Electric Industrial Co., Ltd.

Kiyotaka Wasa

Osamu Yamazaki

Kentaro Setsune

Shigeru Hayakawa

Shusuke Ono

Tsuneo Mitsuyu

Kenzo Ohji

Ritsuo Inaba

Hideaki Adachi

Hidetaka Higashino

Fumio Hosomi

Makoto Kitabatake

Takashi Hirao

Akira Enokihara

Takeshi Kamada

Eiichi Hirota

Shigemi Kohiki

Shinichiro Hatta

Kazuo Tazuke

Noboru Nomura

Seiji Nishino

Atsushi Nishino

Kazuo Yokoyama

Takeo Ohta

Takao Tohda

Shigenori Hayashi

Takeshi Nagai

Yasuo Wakahata

Koichi Mizuno

Takao Kawaguchi

Yukio Kasahara

Shigeru Eayakawa

Junichi Inohara

Hisamitsu Maeda

Masazumi Katase

Tomohiro Yashiki

Atsuo Nishikawa

Tomoaki Matsushima

You Ichikawa

Shunichiro Kawashima

There is disclosed a method for annealing oxide thin film superconductors having layered structures including at least Cu--O layers in which each oxide thin film superconductor is heated partially by a heating means and the heating portion is moved at a predetermined speed.

Method for annealing thin film superconductors

A manufacturing method for the thin film superconductor is disclosed in which photons having energies larger than ultraviolet rays are irradiated to the thin film superconductor on or after formation of the thin film. Further, manufacturing methods for superconductive magnetic memory, Josephson device and superconductive transistor are disclosed.

Method for manufacturing thin film oxide superconductors and

A Josephson device, comprising a junction formed by forming the first layer-shaped oxide superconductor thin film including a plurality of Cu-O layers on a substrate, a barrier layer thereon and the second layer-shaped oxide superconductor thin film on the barrier layer. The Josephson device according to the present invention is manufactured by forming the first layer-shaped oxide superconductor thin film on a substrate, forming a barrier layer in the same vacuum chamber, defining patterns to said barrier layer and said first layer-shaped oxide superconductor thin film, forming an interlayer insulating film on said barrier layer, removing said interlayer insulating film in a region serving as a junction, effecting exposure to oxygen plasma, forming the second layer-shaped oxide superconductor thin film in contact with a part of the surface of said barrier layer and defining patterns to said second layer-shaped oxide superconductor thin film.

Josephson devices and process for manufacturing the same

A superconductor structure of very high performance is realized by forming a crystalline coating on a substrate of semiconductor, etc. and epitaxially depositing a crystalline superconductor film of good quality on this crystalline coating. Especially, CaF.sub.2 crystal and ZrO.sub.2 crystal of CaF.sub.2 crystal structure have latice constants which match well with the substrate such as Si, GaAs, etc. and the superconductor. The crystalline coating may be a perovskite material such as BaTiO.sub.3 when the superconductor is a perovskite material.

Superconductor structure

A diamond-like hard carbon film is formed on a substrate by impinging particles of carbon onto a surface of the substrate, bombarding the surface of the substrate with accelerated particles of inert gas or particles of carbon together with hydrogen in a direction not more than 10 degrees out of parallel to the surface so that the particles of carbon aggregate on the surface, at room temperature.

Method for deposition of hard carbon film

Optical valve

An inorganic protection film (12) such as of silicon nitride for protecting humidity-sensitive functional devices (16) on the substrate from water molecules (15) is formed on an organic substrate (11) such as one made of polycarbonate plastic material, with a soft buffer interface film (13) between the substrate and the protection film, and the buffer film releases stress due to the difference of thermal expansion coefficients of the organic substrate and the protection film.

Protection film structure for functional devices

Optical switch

In a method of manufacturing a surface-acoustic-wave device composed of, at least, a substrate through which a surface acoustic wave is propagated, the propagation velocity of the surface acoustic wave is adjusted by applying light directly to the surface of the substrate constituting the device or through a thin film of asymmetric lattice configuration deposited thereon by sputtering, the thin film having a thickness not exceeding a value of 0.03 times as large as the wavelength of the surface acoustic wave propagated through the substrate.

Method of manufacturing surface acoustic wave device

An electrostatic voltage sensor which includes a surface acoustic wave propagating medium and transmitting and receiving transducers coupled to the medium. The voltage sensor is provided with a separate voltage collecting member different from the electrode for applying a voltage or electric field, and the voltage obtained in the voltage collecting member is varied by a predetermined frequency for being applied to the electrode so as to detect external voltage by the variation component of the oscillating frequency.

Electrostatic voltage sensor

A magnetic head includes at least a core for constituting a magnetic circuit and a magnetic gap formed in the core. The core comprises an amorphous magnetic metallic film formed on a non-magnetic high-resistance substrate so that one of the end faces of the non-magnetic high-resistance substrate and the amorphous magnetic metallic film may be brought into contact with a magnetic recording medium.

Magnetic head incorporating an amorphous magnetic metallic film having a

A voltage measuring device includes a surface acoustic wave propagating medium and transmitting and receiving transducers coupled to the medium. An electrode that receives an unknown voltage is applied to the medium for effecting, when the unknown voltage is supplied, a frequency change in the acoustic wave propagating through the medium. A detector is provided for detecting the frequency change which is an indication of voltage supplied to the electrode.

Voltage measuring device

A surface acoustic wave transducer has a multilayered substrate which is made of a nonpiezoelectric plate which has a surface which is coated with a piezoelectric film, and has an interdigital electrode which is disposed on or under the surface of the piezoelectric film. The interdigital electrode has a split structure and the phase velocity of the surface acoustic wave of the piezoelectric film is smaller than that of the nonpiezoelectric plate.

Surface acoustic wave transducer using a split-finger electrode on a

A pickup stylus comprises a diamond stylus body having a rough surface and a conductive coating deposited onto said rough surface. The rough surface is made by ion bombardment process. The pickup stylus is useful for information playback in video and/or audio disc system.

Pickup stylus

Environmental condition sensor

Growing community of inventors

Nara, Japan

Kiyotaka Wasa