Rohm Co., Ltd.

Kiyotaka Umemoto

Ko Takemura

Masaru Sakai

Kenichi Nakata

Genki Tsuruyama

Yuhei Yamaguchi

Tetsuo Tateishi

Shingo Hashiguchi

Kenji Otani

Shogo Hachiya

Keisuke Tsutsumi

A semiconductor device, includes: a first semiconductor chip including a first semiconductor substrate; and a second semiconductor chip including a second semiconductor substrate, wherein the first semiconductor substrate has a first substrate main surface and a first substrate back surface facing opposite directions in a first direction, and includes a first region and a second region disposed on the first substrate main surface, wherein the first semiconductor chip includes: a first MOSFET of a first type structure formed to include the first region; and a control circuit formed to include the second region, wherein the second semiconductor chip includes a second MOSFET of a second type structure formed to include the second semiconductor substrate, and wherein the second type structure is different from the first type structure.

Semiconductor device

A semiconductor device includes a semiconductor chip including a semiconductor substrate, an element formed in an element forming region of the semiconductor substrate, and a through-via penetrating across a front surface and a rear surface of the semiconductor substrate while avoiding the element forming region of the semiconductor substrate to form a conductive path between the front surface and the rear surface; a circuit component mounted on a circuit component connection surface at the same side as the front surface of the semiconductor substrate of the semiconductor chip; and an external connection members formed on the rear surface of the semiconductor substrate.

A constant voltage generating circuit includes an ED-type reference voltage supply that generates a predetermined constant voltage by using a first transistor of depletion-type and a second transistor of enhancement-type that are connected in series between a power supply terminal and a ground terminal, and a third transistor a source of which is connected to an output terminal for the constant voltage, a drain of which is connected to the power supply terminal or the ground terminal, and a gate of which is connected to a connection node between the first transistor and the second transistor.

Constant voltage generating circuit

In a switching regulator, a first switch and a second switch are turned ON and OFF complementarily according to an output voltage. In a step-up/down mode, a third switch and a fourth switch are turned ON and OFF complementarily while the ON-duty D of the third switch is kept fixed.

Switching regulator

A semiconductor package includes a plurality of chips, which include a plurality of corresponding functional blocks having the same function among the chips, and only one of the corresponding functional blocks having the same function among the chips enables function, and one or more functional blocks enable function in each of the chips, so that the functional blocks are distributed among the chips.

Semiconductor package

A synchronous rectification DC/DC converter includes a first transistor and a second transistor including respective main electrodes connected to a common connection point, the first transistor and the second transistor being NMOS transistors, a control circuit configured to control switching of the first transistor and the second transistor in a complementary manner, a bootstrap circuit that includes a first capacitor charged with a current supplied from a high voltage potential terminal and is configured to raise a voltage potential of a control electrode of the first transistor to turn on the first transistor, and a charging stop circuit configured to stop the first capacitor from being charged from the high voltage potential terminal in a time period in which the first transistor and the second transistor are turned off simultaneously.

Synchronous rectification DC/DC converter

An output monitoring comparator outputs an ON signal when an output voltage becomes lower than a reference voltage. A pulse modulator generates a pulse signal at a predetermined level, an ON time-period from when the ON signal is outputted. A driver circuit alternately turns ON, after a dead time, a switching transistor and a synchronous rectification transistor, based on the pulse signal. A light load mode detector compares a switching voltage at a connection point of the switching transistor and the synchronous rectification transistor, and ground potential, and at timing at which the ON signal is outputted from the output monitoring comparator, when the switching voltage is higher than the ground potential, nullifies the ON signal.

Control circuit for synchronous rectification type step-down switching regulator

Step-down switching regulator

In a power supply apparatus that is so configured as to produce from an input voltage an output voltage Vo within a predetermined permissible variation range, the output voltage Vo is so controlled as to decrease within the permissible variation range as the output current Io increases. This configuration offers an output voltage with an improved transient characteristic against an abrupt variation in the output current and simultaneously permits reduction of the power consumed when the output current increases.

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Kyoto, Japan

Kiyotaka Umemoto