Panasonic Corporation

Panasonic Intellectual Property Management Co., Ltd.

Kiyotaka Tsuji

Takumi Mikawa

Kazuhiko Shimakawa

Yumiko Kato

Takashi Okada

Kenji Tominaga

Satoru Fujii

Koji Katayama

Taichi Sato

Ryotaro Azuma

Haruyuki Sorada

Yukio Hayakawa

Yoshihide Sawada

Shinichi Yoneda

Yuichiro Ikeda

Akifumi Kawahara

Ken Shimono

Li Liu

An electric reaction measuring apparatus measures a potential of each of measurement electrodes, which are respectively disposed in chambers in a culture vessel, with respect to at least one reference electrode. The electric reaction measuring apparatus includes at least one control circuit. A measurement object is disposed in each of the chambers. The at least one control circuit calculates at least one principal component for each of the measurement electrodes by performing principal component analysis of the potential of each of the measurement electrodes; estimates, for each of the measurement electrodes, a potential corresponding to the principal component from the principal component of the measurement electrode, and synthesizes the estimated potential; subtracts the synthesized potential of the measurement electrode from a potential measured at the measurement electrode; and outputs a potential after subtraction.

Electric reaction measuring apparatus, electric reaction processing method, and recording medium

A method for evaluating drug responsiveness includes disposing a myocardial cell produced through differential induction onto a board including an electrode, administering a drug to the myocardial cell, continuously applying, after the drug is administered, a pulse current or a pulse voltage to the myocardial cell through the electrode for a certain period of time, measuring, after the certain period of time has elapsed, a pulsation characteristic of the myocardial cell, and evaluating responsiveness of the myocardial cell to the drug on a basis of the pulsation characteristic.

Method for evaluating drug responsiveness and drug responsiveness evaluation system

The present disclosure provides a technique which makes it possible to evaluate a state of a cell aggregation of one or more spheroids. In the culture state determination device according to the present disclosure, a plurality of light sources sequentially illuminate a plurality of cell aggregations put on an image sensor. The image sensor acquires captured images of the plurality of the cell aggregations each time when the plurality of the light sources illuminate the plurality of the cell aggregations. Control circuitry extracts a region including an image of the cell aggregation in the captured image; generates three-dimensional image information of the region using a plurality of the captured images; extracts an outer shape of the cell aggregation and a cavity part inside the cell aggregation using the three-dimensional image information; calculates a first volume that is a volume based on the outer shape of each of the cell aggregation and a second volume that is a volume of the cavity part based on the cavity part of each of the cell aggregation in the three-dimensional image information; and determines a culture state of the cell aggregations using the first volume and the second volume.

Culture state determination based on direction-dependent image information

The present invention provides a method for producing a &#x3b2; myosin heavy chain in cardiac muscle cells differentiated from induced pluripotent stem cells derived from Homo sapiens. In the present method, first, a liquid culture medium containing the cardiac muscle cells is supplied onto a substrate comprising a first electrode, a second electrode and insulative fibers on the surface thereof. At least a part of the insulative fibers is located between the first electrode and the second electrode in a top view of the substrate. Then, the substrate is left at rest. Finally, the cardiac muscle cells are cultivated, while a pulse electric current is applied to the cardiac muscle cells through the first electrode and the second electrode.

Method for efficiently producing &#x3b2; myosin heavy chain in cardiac muscle cells differentiated from induced pluripotent stem cells derived from

The present invention provides a cell potential measuring electrode assembly comprising: an insulating substrate; a conductive pattern arranged in the insulating substrate; an insulating fiber having cell compatibility; and a measurement electrode. The insulating fiber is arranged on the insulating substrate. The measurement electrode has a front surface and a back surface. The back surface of the measurement electrode is in contact with the conductive pattern. The insulating fiber is not arranged on the front surface of the measurement electrode. The cell potential measuring electrode assembly according to the present invention has low impedance. The cell potential measuring electrode assembly according to the present invention is suitable to measure electric potential change of a cardiomyocyte.

Cell potential measuring electrode assembly and method for measuring electric potential change of cell using the same

A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first current steering layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second current steering layer which covers side surfaces of the first current steering element electrode, the first current steering layer, and the second current steering element electrode.

Nonvolatile semiconductor memory element, nonvolatile semiconductor memory device, and method for manufacturing nonvolatile semiconductor memory device

Provided is a variable resistance element (Rij) the resistance state of which is reversibly changed by applying electrical signals of different polarities; and a current steering element (Dij) in which a first current is larger than a second current, the first current being a current which flows when a voltage of the first polarity having a first value is applied, the first value being less than a predetermined voltage value and having an absolute value greater than zero, the second current being a current which flows when a voltage of the second polarity having an absolute value which is the first value is applied, the second polarity being different from the first polarity, in which Rij and Dij are connected in series such that the polarity of a voltage to be applied to Dij is the second polarity when the resistance state of Rij is changed to high resistance state.

Variable resistance nonvolatile memory device

A nonvolatile semiconductor memory device includes word lines, bit lines, a cross-point cell array including cells, each of which includes memory cells and at least one offset detection cell, a word line selection circuit, a bit line selection circuit, a write control circuit, a current sensing circuit which detects a current and converts it into an electrical signal, wherein a write control circuit adjusts a write electrical signal for causing a second write current higher than a first write current to flow through the memory cell.

Nonvolatile semiconductor memory device and write method for the same

A method of designing a cross-point non-volatile memory device including memory elements arranged in (N&#xd7;M) matrix, each of the memory elements including a variable resistance element and a bidirectional current steering element connected in series with the variable resistance element, the method comprises the step of: when an absolute value of a low-resistance state writing voltage is VR and an absolute value of a current flowing through the variable resistance element having changed to a low-resistance state by application of the low-resistance state writing voltage to both ends of the variable resistance element in a high-resistance state is I, and a relationship between a voltage Vapplied to both ends of the bidirectional current steering element and a current I flowing through the bidirectional current steering element is approximated as |V|=a&#xd7;Log(I)+b, deciding N, M, VR, I, a, and b such that b&#x2212;VR/2&#x3e;a&#xd7;[Log {(N&#x2212;1)&#xd7;(M&#x2212;1)}&#x2212;Log(I)] is satisfied (S).

Designing method of non-volatile memory device, manufacturing method of non-volatile memory device, and non-volatile memory device

A cross point nonvolatile memory device capable of suppressing sneak-current-caused reduction in sensitivity of detection of a resistance value of a memory element is provided. The device includes perpendicular bit and word lines; a cross-point cell array including memory cells each having a resistance value reversibly changing between at least two resistance states according to electrical signals, arranged on cross-points of the word and bit lines; an offset detection cell array including an offset detection cell having a resistance higher than that of the memory cell in a high resistance state, the word lines being shared by the offset detection cell array; a read circuit (a sense amplifier) that determines a resistance state of a selected memory cell based on a current through the selected bit line; and a current source which supplies current to the offset detection cell array in a read operation period.

Nonvolatile semiconductor memory device and read method for the same

A method of manufacturing a nonvolatile memory device that is a variable resistance nonvolatile memory device, which has good consistency with a dual damascene process that is suitable for the formation of fine copper lines and which enables large capacity and high integration. This method includes: forming a variable resistance element, a contact hole and a line groove; and forming a current steering layer of a bidirectional diode element above interlayer insulating layers and a variable resistance layer to cover the line groove without covering a bottom surface of the contact hole.

Nonvolatile memory device manufacturing method

A nonvolatile semiconductor memory device includes: word lines; bit lines formed so as to three-dimensionally cross the word lines; and a cross-point cell array including cells each provided at a corresponding one of three-dimensional cross-points of the word lines and the bit lines. The cells include: a memory cell including a memory element that operates as a memory by reversibly changing in resistance value between at least two states based on an electrical signal; and an offset detection cell having a constant resistance value that is higher than the resistance value of the memory element in a high resistance state which is a state of the memory element when operating as the memory.

A memory device that can prevent degradation in characteristics of a diode and the destruction due to the miniaturization includes: a substrate; first electrodes, a second electrode, and a third electrode that are stacked above the substrate; a variable resistance layer between the first and second electrodes; and a non-conductive layer between the second and third electrodes. The variable resistance layer includes a high-concentration variable resistance layer closer to the first electrodes, and a low-concentration variable resistance layer closer to the second electrode and having an oxygen concentration lower than that of the high-concentration variable resistance layer. The second and third electrodes and the non-conductive layer comprise the diode, and the first and second electrodes and the variable resistance layer comprise variable resistance elements, a total number of which is equal to that of the first electrodes.

Memory device, semiconductor storage device, method for manufacturing memory device, and reading method for semiconductor storage device

A non-volatile semiconductor memory device comprises a plurality of memory cell holes () formed through an interlayer insulating layer () at respective cross-points of a plurality of first wires () of a stripe shape and a plurality of second wires () of a stripe shape when viewed from above such that the memory cell holes () expose upper surfaces of the plurality of first wires, respectively, a plurality of dummy holes () formed on the plurality of first wires in the interlayer insulating layer such that the dummy holes reach the upper surfaces of the plurality of first wires, respectively, and stacked-layer structures formed inside the memory cell holes and inside the dummy holes, respectively, each of the stacked-layer structures including a first electrode () and a variable resistance layer (); an area of a portion of the first wire which is exposed in a lower opening of one of the dummy holes being greater than an area of a portion of the first wire which is exposed in a lower opening of one of the memory cell holes; and one or more of the dummy holes being formed on each of the first wires.

Non-volatile semiconductor memory device and manufacturing method thereof

A nonvolatile memory element including a resistance variable element configured to reversibly change between a low-resistance state and a high-resistance state in response to electric signals with different polarities; and a current controlling element configured such that when a current flowing when a voltage whose absolute value is a first value which is larger than 0 and smaller than a predetermined voltage value and whose polarity is a first polarity is applied is a first current and a current flowing when a voltage whose absolute value is the first value and whose polarity is a second polarity is applied is a second current, the first current is higher than the second current, and the resistance variable element is connected with the current controlling element such that the first polarity voltage is applied to the current controlling element when the resistance variable element changes from the low-resistance to the high-resistance state.

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Osaka, Japan

Kiyotaka Tsuji