Dow Corning Toray Silicone Company Limited

Kiyotaka Sawa

Katsutoshi Mine

Takashi Nakamura

Akihiko Kobayashi

Motoshi Sasaki

Yoshitsugu Morita

Kazuo Kobayashi

Ryuji Tachibana

Yasushi Sugiura

Tadashi Hamachi

Osamu Tanaka

A method for forming an electrically insulating thin film coating the surface of an electronic device with an electrically insulating thin-film-forming resin composition and crosslinking the composition by a method selected from the group consisting of heating and irradiation with high-energy rays.

Method for forming thin film from electrically insulating resin composition

An electrically insulating crosslinked thin-film-forming organic resin composition comprising (A) an electrically insulating organic resin having silicon atom-bonded hydrogen atoms or silicon atom-bonded alkenyl groups and (B) a solvent, and a method for forming a crosslinked thin film therefrom.

Electrically insulating crosslinked thin-film-forming organic resin composition and method for forming thin film therefrom

An electrically insulating thin-film-forming resin composition comprising (A) a hydrogen silsesquioxane resin, (B) a solvent-soluble polymer, and (C) a solvent; and a method for forming an electrically insulating thin film therefrom.

Electrically insulating thin-film-forming resin composition and method for forming thin film therefrom

Method for forming insulating thin films

A method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. A semiconductor device is also disclosed as having an interconnect structure including at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method described above.

Semiconductor device and method for the fabrication thereof

This invention pertains to a method for forming thin films on substrates wherein the films are produced by applying a solution of an electrically insulating, heat-curing resin onto the substrate, evaporating the solvent and exposing the resin to high energy radiation to cure the resin. The resin solution contains a substance selected from solvents and gas generating additives that causes the dedensification of the film during the cure of the resin. This results in a film having a dielectric constant of below 2.7. This invention also pertains to a semiconductor device having an interconnect structure comprising at least one electrically conductive layer with an interposed insulating layer having a dielectric constant of less than 2.7 wherein the insulating layer is produced by the method of this invention.

The instant invention pertains to a composition that can form silica thin films, wherein said composition performs well as a substrate planarizing coating when applied to a substrate and can be converted by exposure to high-energy radiation into silica thin film with an excellent electrical insulating performance. The composition for the formation of silica thin films comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing the surface of the said substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.

Method for the formation of silica thin films

To provide a composition and process for forming insulating films that can produce insulating films having low dielectric constants. The composition comprises (A) an electrically insulating curable inorganic or organic resin, (B) a solvent, and (C) at least one solvent-soluble substance (excluding the solvent used for component (B)) that upon heating or by interaction with the resin (A) can generate gas or undergo volatilization in the temperature range from 0.degree. C. to 800.degree. C. The insulating films are prepared by coating the surface of a substrate the composition; evaporating the solvent; and subsequently heating the substrate in order to generate gas from component (C) during the course of or after the cure of the said resin (A).

Composition and process for forming electrically insulating thin films

To provide a composition for the formation of insulating films that can form an insulating film having a low dielectric constant. The composition comprises (A) an electrically insulating curable resin selected from the group consisting of electrically insulating curable organic resins and electrically insulating curable inorganic resins; and (B) at least two solvents: (B)(i) a solvent capable of dissolving resin (A) and (B)(ii) a solvent whose boiling point or vapor pressure curve differs from that of solvent (B)(i) or whose affinity for resin (A) differs from that of solvent (B)(i). Also claimed is a method for forming a insulating films that have a dielectric constant of less than 2.7.

A cured silicone powder inhibited from evolving unpleasant odors with the passage of time, and an efficient method for preparation of the cured silicone powder, in which the surface of the cured silicone powder is treated with an alkali, by dipping the cured silicone powder in an aqueous alkaline solution.

Cured silicone powder and method of preparation

Silicone grease compositions are prepared by blending a thickening agent with a liquified crosslinked organosiloxane gel produced using a platinum-catalyzed hydrosilylation reaction. The gel is liquified by application of a shearing force to the crosslinked gel. The shearing force can be applied prior to and/or during blending of the gel with the thickener.

Growing community of inventors

Chiba Prefecture, Japan

Kiyotaka Sawa