Toyoda Gosei Co., Ltd.

Kiyotaka Mizukami

Takahiro Sonoyama

Tohru Oka

Toru Oka

Junya Nishii

The present invention provides a MIS-type semiconductor device having a ZrONgate insulating film in which threshold voltage shift is suppressed, thereby achieving stable operation. In the MIS-type semiconductor device having a gate insulating film on the semiconductor layer and a gate electrode on the gate insulating film, with a gate applied voltage of 5 V or more, the gate insulating film is formed of ZrON(x and y satisfy the relation: x&#x3e;0, y&#x3e;0, 0.8&#x2266;y/x&#x2266;10, and 0.8&#x2266;0.59x+y&#x2266;1.0). The MIS-type semiconductor device having such a gate insulating film can perform stable operation because there is no shift in the threshold voltage even if a high voltage is applied to the gate electrode.

MIS-type semiconductor device

A manufacturing method of MIS (Metal Insulator Semiconductor)-type semiconductor device includes the steps of: forming a zirconium oxynitride (ZrON) layer; forming an electrode layer containing titanium nitride (TiN) on the zirconium oxynitride (ZrON) layer; and heating the electrode layer.

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Kiyosu, Japan

Kiyotaka Mizukami