Kabushiki Kaisha Toshiba

Nuflare Technology, Inc.

Kiyotaka Miyano

Ichiro Mizushima

Yoshitaka Tsunashima

Tomonori Aoyama

Kyoichi Suguro

Yasushi Akasaka

Yoshio Ozawa

Masayuki Tanaka

Kazuaki Nakajima

Toshihiko Iinuma

Yusuke Oshiki

Yasumasa Suizu

Seiji Inumiya

Hajime Nagano

Kouji Matsuo

Tsunetoshi Arikado

Takayuki Hiraoka

Kenichi Yoshino

Tsutomu Sato

Takayuki Ito

Tomohiro Saito

Yuichiro Mitani

Yukihiro Ushiku

Yasushi Iyechika

Kunihiro Miyazaki

Takuo Ohashi

Takaharu Itani

Hideshi Takahashi

Shigeru Kambayashi

Yoshiaki Fukuzumi

Hideaki Aochi

Masaru Kito

Fumitaka Arai

Riichiro Shirota

Hiroshi Ohno

Hiroyuki Yano

Makoto Mizukami

Hajime Nago

Yukiteru Matsui

Nobutoshi Aoki

Yoshinori Honguh

Atsushi Shigeta

Masataka Shiratsuchi

Shinji Mori

Kazunari Ishimaru

Shigehiko Saida

Toshiyuki Enda

Kazuya Ohuchi

Takeshi Nishioka

Tatsunori Isogai

Hiroyoshi Tanimoto

Yoshiaki Daigo

Yasunori Okayama

Toshitaka Miyata

Naoki Kusunoki

Takashi Haraguchi

Mitsuaki Izuha

Shinichi Hirasawa

Wakana Kai

Hiroshi Nakazawa

Yoshitaka Ishikawa

Masayuki Tsukui

Takehiko Kobayashi

Seiji Ihumiya

Kyoioni Suguro

A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

Vapor phase growth method using reflector with changeable pattern

A semiconductor device includes: a silicon substrate having a first plane with a first plane orientation; a silicon oxide layer provided on a first region of the silicon substrate; a first silicon layer provided on the silicon oxide layer, the first silicon layer having a second plane with a second plane orientation different from the first plane orientation; and a wide-bandgap compound semiconductor layer having a hexagonal crystal structure.

Semiconductor device and method for manufacturing the same

The film forming apparatus includes a reaction chamber in which a substrate subjected to film forming processing can be placed, a gas supplier provided in an upper part of the reaction chamber, having a portion where gas is introduced and gas supply holes to face the substrate, a source-gas introducing line introducing a source gas into the gas supplier, a replacement-gas introducing line introducing a replacement gas into the gas supplier, a discharge line discharging the replacement gas along with a remaining source gas which is the source gas remaining in the gas supplier from the gas supplier; and a controller controlling one of an introduction amount of the replacement gas and a discharge amount of the remaining source gas and the replacement gas to be an amount corresponding to the other amount.

Film forming apparatus and film forming method

A vapor phase growth method according to an embodiment is a vapor phase growth method of forming on a single substrate a film having a composition different from a composition of the substrate. The method includes, rotating the single substrate with a center of the single substrate being a rotation center, heating a single substrate to a first temperature, and forming a silicon carbide film having a film thickness of 10 nm or more and 200 nm or less on a surface of the single substrate by supplying a first process gas containing silicon and carbon as a laminar flow in a direction substantially perpendicular to the surface of the single substrate.

Vapor phase growth method

According to one embodiment, a microwave annealing apparatus is provided, including a housing shielding electromagnetic waves, a first electromagnetic wave source configured to apply a first electromagnetic wave into the housing, a second electromagnetic wave source configured to apply, into the housing, a second electromagnetic wave having a higher frequency than the first electromagnetic wave, a susceptor configured to hold a semiconductor substrate, made of a material transparent to the first electromagnetic wave and provided in the housing, a temperature measuring device configured to measure the temperature of the semiconductor substrate, and a control unit configured to control the power of each of the first and second electromagnetic wave sources in accordance with the temperature measured by the temperature measuring device.

Microwave annealing apparatus and method of manufacturing a semiconductor device

According to one embodiment, the manufacturing method for the semiconductor device according to the embodiment includes carrying out ion implantation to the semiconductor layer and forming an amorphous layer on the surface of the semiconductor layer, and a heat treatment process using microwave annealing at a temperature higher than or equal to 200&#xb0; C. and lower than or equal to 700&#xb0; C. and single crystallizes the amorphous layer.

Manufacturing method for semiconductor device, annealing device, and annealing method

In a method, a gate dielectric film is formed on a semiconductor substrate. A gate electrode is formed on the gate dielectric film. Impurities of a first conduction-type are introduced into a drain-layer formation region. The impurities of the first conduction-type in the drain-layer formation region are activated by performing heat treatment. Single crystals of the semiconductor substrate in a source-layer formation region are amorphized by introducing inert impurities into the source-layer formation region. Impurities of a second conduction-type is introduced into the source-layer formation region. At least an amorphous semiconductor in the source-layer formation region is brought into a single crystal semiconductor and the impurities of the second conduction-type in the source-layer formation region is activated by irradiating the semiconductor substrate with microwaves. The impurities of the second conduction-type in the source-layer formation region is shallower than the impurities of the first conduction-type in the drain-layer formation region.

Semiconductor device and manufacturing method thereof

In one embodiment, a method of manufacturing a semiconductor device includes forming an amorphous semiconductor film on a substrate. The method further includes annealing the amorphous semiconductor film by irradiating the substrate with a microwave to form a polycrystalline semiconductor film from the amorphous semiconductor film. The method further includes forming a transistor whose channel is the polycrystalline semiconductor film.

Semiconductor device and method of manufacturing the same

According to one embodiment, a method for manufacturing a semiconductor device, wherein an amorphous semiconductor film comprising a microcrystal is annealed using a microwave, to crystallize the amorphous semiconductor film comprising the microcrystal using the microcrystal as a nucleus.

Semiconductor device and method for manufacturing semiconductor device

According to one embodiment, a method of manufacturing a semiconductor device includes forming a gate electrode on a channel region in a silicon substrate via a gate insulation film; forming a source region and a drain region in the silicon substrate so as to sandwich the channel region along a channel direction by injecting desired impurities to the silicon substrate; forming amorphous regions containing the impurities on surfaces of the source region and the drain region by amorphousizing the surfaces of the source region and the drain region; forming nickel films on the amorphous regions; and forming crystal layers containing the activated impurities and forming nickel silicide films on the crystal layers at low temperature by radiating microwaves to the amorphous regions and the nickel films.

Method of manufacturing semiconductor device

According to one embodiment, a manufacturing method of semiconductor device includes forming plural elements on a substrate, forming a silicon compound film so as to bury between a plurality of elements, and modifying the silicon compound film to a silicon dioxide film by radiating microwaves.

Manufacturing method of semiconductor device

According to one embodiment, a semiconductor memory device includes a semiconductor substrate, memory cell array portion, single-crystal semiconductor layer, and circuit portion. The memory cell array portion is formed on the semiconductor substrate, and includes memory cells. The semiconductor layer is formed on the memory cell array portion, and connected to the semiconductor substrate by being formed in a hole extending through the memory cell array portion. The circuit portion is formed on the semiconductor layer. The Ge concentration in the lower portion of the semiconductor layer is higher than that in the upper portion of the semiconductor layer.

Semiconductor memory device having a circuit formed on a single crystal semiconductor layer with varied germanium concentration

An ion implantation is performed to implant ions into a silicon substrate, and a microwave irradiation is performed to irradiate the silicon substrate with microwaves after the ion implantation. After the microwave irradiation, the silicon substrate is transferred to a heat-treatment apparatus, where the silicon substrate is treated with heat by being irradiated with light having a pulse width ranging from 0.1 milliseconds to 100 milliseconds, both inclusive.

Method of fabricating semiconductor device

In one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can include depositing a first amorphous film having a first impurity, depositing a third amorphous lower-layer film on the first amorphous film, forming microcrystals on the third amorphous lower-layer film, depositing a third amorphous upper-layer film on the third amorphous lower-layer film to cover the microcrystals, depositing a second amorphous film having a second impurity on the third amorphous upper-layer film, and radiating microwaves to crystallize the third amorphous lower-layer film and the third amorphous upper-layer film to form a third crystal layer, and crystallize the first amorphous film and the second amorphous film to form a first crystal layer and a second crystal layer.

In one embodiment, a method of manufacturing a back side illuminated imaging device includes forming a semiconductor detection device and a peripheral circuit device on a semiconductor substrate, and bonding the semiconductor substrate onto a holding substrate via the semiconductor detection device and the peripheral circuit device. The method further includes removing the semiconductor substrate from the holding substrate to transfer the semiconductor detection device and the peripheral circuit device onto the holding substrate. The method further includes forming an amorphous semiconductor layer in which impurities are introduced, on the semiconductor detection device transferred onto the holding substrate, and annealing the amorphous semiconductor layer by using a microwave.

Method of manufacturing back side illuminated imaging device

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Tokyo, Japan

Kiyotaka Miyano