National Institute for Materials Science

Koha Co., Ltd.

Waseda University

Fujikura Limited

Tamura Corporation

Toyoda Gosei Co., Ltd.

Sakai Chemical Industry Co., Ltd.

Hokushin Corporation

Kiyoshi Shimamura

Encarnacion Antonia Garcia Villora

Kazuo Aoki

Noboru Ichinose

Yukio Kaneko

Daisuke Inomata

Villora Encarnacion Antonia Garcia

Yusuke Arai

Makoto Watanabe

Yoshihiro Yamashita

Hiroyuki Sawano

Hiroaki Sano

Akiharu Funaki

Tsubasa Hatanaka

Seitaro Yoshida

Naoki Shibata

Kenji Kitamura

Naoki Ohashi

Keiji Sumiya

Koji Hirata

Kazuo Sanada

Yasuhisa Ushida

Daisuke Shinoda

Rikiya Suzuki

Yuhei Ikemoto

Yasuhiko Kuwano

Isao Sakaguchi

Yoshihiro Irokawa

Garcia Villora

Yoshihiko Masa

Daisuke Yamazaki

Satoshi Nakakita

Nobuhiro Izaki

Villora Encarnacion Garcia

A wavelength conversion member includes a support, and a wavelength conversion layer that includes a phosphor particle group and a sealing member to seal the phosphor particle group and that is provided directly or through an other layer on the support. A predetermined region, in which a cross-sectional area rate of the phosphor particle group is not less than 50%, is included in an arbitrary cross section of the wavelength conversion layer taken parallel to a thickness direction thereof. The predetermined region includes a rectangular region with a width of 700 μm and a thickness of 50 μm from a bottom surface of the wavelength conversion layer when a thickness of the wavelength conversion layer is not less than 50 μm, or a rectangular region with a width of 700 μm and a thickness equal to the thickness of the wavelength conversion layer when it is less than 50 μm.

Wavelength conversion member

A wavelength conversion member includes a sintered body of a phosphor. An average diameter of pores in an arbitrary cross section falls within a range of not less than 0.28 μm and not more than 0.98 μm. A ratio of an area of pores to a whole area in an arbitrary cross section falls within a range of not less than 0.04% and not more than 2.7%. An average diameter of grains of the phosphor in an arbitrary cross section falls within a range of not less than 1 μm and not more than 3 μm.

Provided is a particulate phosphor including a single crystal having a composition represented by a compositional formula (YLuGdCe)AlO(0&#x2264;x&#x2264;0.9994, 0&#x2264;y&#x2264;0.0669, 0.001&#x2264;z&#x2264;0.004, &#x2212;0.016&#x2264;a&#x2264;0.315) and a particle diameter (D50) of not less than 20 &#x3bc;m. Also provided is a light-emitting device including a phosphor-including member that includes the phosphor and a sealing member including a transparent inorganic material sealing the phosphor or a binder including an inorganic material binding particles of the phosphor, and a light-emitting element that emits a blue light for exciting the phosphor.

Phosphor and production method thereof phosphor-including member, and light emitting device or projector

A phosphor-containing member includes a transparent member, and a plurality of granular single crystal phosphors dispersed in the transparent member. Each of the plurality of granular single crystal phosphors includes a YAG crystal as a mother crystal. The plurality of granular single crystal phosphors are prepared by crushing the YAG crystal. The YAG crystal has a composition represented by a formula of YGdCeAlO(0.03&#x2264;x&#x2264;0.2, 0.003&#x2264;y&#x2264;0.2, &#x2212;0.2&#x2264;w&#x2264;0.2). Reduction of fluorescence intensity of the phosphors is less than 3% when an excitation light wavelength is 460 nm and a temperature is increased from 25&#xb0; C. to 100&#xb0; C.

Phosphor, method for manufacturing same, and light-emitting device

A piezoelectric material for a combustion pressure sensor, a method for producing the piezoelectric material, and a combustion pressure sensor using the piezoelectric material are provided. The piezoelectric material of the present invention includes a single crystal containing Ca, Ta, an element M (M is Al or Ga), Si, and O, the single crystal has the same crystal structure as the crystal structure of langasite represented by LaGaSiO, and at least the content of the element M is insufficient for the stoichiometric composition represented by CaTaMSiO. Preferably, in a case where the element M is Ga, each content of the Ca and the Si is excessive for the stoichiometric composition, and in a case where the element M is Al, the content of the Ca is excessive for the stoichiometric composition, and the content of the Ta is insufficient for the stoichiometric composition.

Piezoelectric material, method for producing the same, piezoelectric element and combustion pressure sensor

According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder.

Light emitting device

An optical material used in a UV-excited yellow light-emitting material and an optical isolator, capable of emitting yellow light stably and highly efficiently even if a large current is fed to obtain the high luminance emission. The optical material used for the UV-excited yellow light-emitting material () and the optical isolator () is an oxide containing Ce, which is a terbium cerium aluminum garnet type single crystal wherein a part of terbium of a terbium aluminum garnet type single crystal is substituted by cerium. The ratio of number of moles of cerium to the total number of moles of terbium and cerium, namely the composition ratio of cerium, preferably falls within the range from 0.01 mol % to 50 mol %. A part of aluminum may be substituted by scandium or further by any one of terbium, cerium, yttrium, lutetium, ytterbium, and thulium.

Optical material used in light-emitting device, optical isolator, and optical processing apparatus, and manufacturing method thereof

A UV photoexcited red light-emitting material comprising a fluoride single crystal represented by the chemical formula: MREF, wherein M is at least one metal element belonging to Group 2 of the Periodic Table selected from the group consisting of Be, Mg, Ca, Sr, and Ba, RE is a rare earth element, and the relationships: 0&#x3c;x&#x2266;0.4 and 0&#x2266;w&#x2266;0.5 are satisfied.

UV photoexcited red light-emitting material and light emitting apparatus

The inorganic optical filter of the invention consists of a NdFsingle crystal. The optical element of the invention comprises a wavelength conversion element wherein incident light is subjected to wavelength conversion to twice the frequency by quasi-phase-matching using primary matching or tertiary matching, and emitted, and an inorganic optical filter situated in the optical path of light emitted from the wavelength conversion element, wherein the wavelength conversion element consists of a ferroelectric fluoride single crystal represented by Ba(MgZn)F(where 0&#x2266;x&#x2266;1, and &#x2212;0.2&#x2266;y&#x2266;0.2), and the inorganic optical filter consists of a NdFsingle crystal.

Inorganic optical filter, optical element, and light source

An AlN single crystal Schottky barrier diode including: an AlN single crystal substrate having a defect density of 10cmor less and a thickness of 300 &#x3bc;m or more; a first electrode formed on one surface of the AlN single crystal substrate; and a second electrode formed on one surface of the AlN single crystal substrate while being spaced apart from the first electrode, the AlN single crystal Schottky barrier diode being provided with: a rectifying property such that an on-off ratio at the time of applying 10 V and &#x2212;40 V is at least 10even at a high temperature of 573 K; a high voltage resistance such that a voltage can be applied at least within a range of &#x2212;40 V to 10 V; and a low on-resistance characteristic such that a current begins to flow at no greater than 5 V.

AlN single crystal Schottky barrier diode and method of producing the same

A light emitting element that includes a GaOsubstrate; an AlGaN buffer layer (0&#x2266;&#xd7;&#x2266;1) formed on the GaOsubstrate; an n-GaN layer formed on the AlGaN buffer layer; an p-GaN layer formed on a portion of the n-GaN layer; an n-electrode formed on a portion of the n-GaN layer; and an p-electrode formed on the p-GaN layer.

Light emitting element and method of making same

[Problem] To provide a light-emitting device which does not undergo the deterioration in luminous efficiency associated with the long-term use. [Solution] A light-emitting device () comprises a light-emitting element () which can emit blue light and a phosphor () which is composed of a single kind of single crystal and can emit yellow light upon the irradiation with the light emitted from the light-emitting element () which serves as excitation light. Thus, it becomes possible to prevent the deterioration in luminous efficiency associated with the deterioration in a binder or the like compared with a light-emitting device which utilizes multiple kinds of granular phosphors, because any binder for binding phosphors to each other is not required in the light-emitting device ().

Light-emitting device

The present invention provides a single crystal for an optical isolator having a Faraday rotation angle exceeding that of TGG single crystal in a wavelength region of 1064 nm or longer or in a wavelength region of shorter than 1064 nm, and is capable of realizing enlargement of crystal size, a production process thereof, an optical isolator, and an optical processor that uses the optical isolator. The single crystal according to the present invention is composed of a terbium aluminum garnet single crystal, and mainly a portion of the aluminum is replaced with lutetium.

Single crystal, production process of same, optical isolator, and optical processor using same

The present invention provides a garnet single crystal comprising a terbium aluminum garnet single crystal, wherein a portion of the aluminum is substituted with scandium, and a portion of at least one of the aluminum and terbium is substituted with at least one type selected from the group consisting of thulium, ytterbium and yttrium.

Growing community of inventors

Tokyo, Japan

Kiyoshi Shimamura