Fujitsu Corporation

Fujitsu Display Technologies Corporation

Sharp Kabushiki Kaisha Corporation

Sharp Corporation

Kiyoshi Ozaki

Tsuyoshi Kamada

Satoru Kawai

Kenji Okamoto

Kouji Tsukao

Yoshihisa Taguchi

Kunio Matsubara

Katsushige Asada

Shogo Hayashi

Yoshio Dejima

Jun Inoue

Shinya Katoh

Teiji Majima

Makoto Igarashi

It is an object of the invention to provide a display and a method for repairing defects of the same in which defects such as inter-layer short-circuits and short-circuits in a single that have occurred at steps for manufacturing the display can be easily repaired to provide a good product with a probability higher than that in the related art. Laser irradiation is carried out as a first cycle of laser irradiation by forming a slit Sin a region where a drain bus linecompletely covers a gate bus lineto form a cut portion longer than the width of the gate bus lineadjacent to an inter-layer short-circuitsuch that it splits an intersecting portion of the drain bus lineinto two parts as shown in FIG.Next, as shown in FIG.slits Sand Sare respectively used for second and third cycles of laser irradiation to cut the drain bus lineat both ends of the cut portion (indicated by S), thereby isolating the inter-layer short-circuitof the drain bus line

Display and method for repairing defects thereof

The present invention relates to a liquid crystal display device and a defect repairing method for the same, and has an object to provide a liquid crystal display device in which a disconnection defect occurring in a storage capacitor bus line can be repaired without producing a new point defect, and a defect repairing method for the same. In the defect repairing method for the liquid crystal display device in which the disconnection defect of the storage capacitor bus line formed on a substrate is repaired, the method includes a step of forming disconnection repairing contact holes for exposing the storage capacitor bus line at both end portions of a disconnection of the storage capacitor bus line and in regions where a pixel electrode is not formed, and a step of forming a disconnection repairing conductive film for electrically connecting both the end portions of the disconnection through the disconnection repairing contact holes without short-circuiting the pixel electrode, and is constructed such that the disconnection defect is repaired by a disconnection repair path constituted by the disconnection repairing conductive film.

Liquid crystal display device and defect repairing method for the same

It is an object of the invention to provide a display and a method for repairing defects of the same in which defects such as inter-layer short-circuits and short-circuits in a single that have occurred at steps for manufacturing the display can be easily repaired to provide a good product with a probability higher than that in the related art. Laser irradiation is carried out as a first cycle of laser irradiation by forming a slit Sin a region where a drain bus linecompletely covers a gate bus lineto form a cut portion longer than the width of the gate bus lineadjacent to an inter-layer short-circuitsuch that it splits an intersecting portion of the drain bus lineinto two parts as shown in FIG.. Next, as shown in FIG., slits Sand Sare respectively used for second and third cycles of laser irradiation to cut the drain bus lineat both ends of the cut portion (indicated by S), thereby isolating the inter-layer short-circuitof the drain bus line

A repairable integrated thin film transistor matrix substrate includes an insulated substrate, and a plurality of parallel gate bus lines and a plurality of accumulated capacitance bus lines formed on the insulated substrate. Each of the accumulated capacitance bus lines extend parallel to and between a pair of the gate bus lines, and has a plurality of auxiliary capacitance electrodes which extend from it. A first insulated film is provided on the gate and accumulated capacitance bus lines and the auxiliary capacitance electrodes. A plurality of operating films are formed on the first insulated film, and on each of the operating films, a corresponding thin film transistors are provided. At least two of the thin film transistors are electrically connected to each of the gate bus lines. Also included is a plurality of parallel drain bus lines which are provided substantially perpendicular to the gate and the accumulated capacitance bus lines on the first insulated film. Each drain bus line electrically connects at least two of the thin film transistors. In addition, a second insulated film having an opening over each of the thin film transistors is provided on the thin film transistors and the drain bus lines. Further, a plurality of pixel electrodes are provided on the second insulated film, which pixel electrodes being electrically connected to a corresponding one of the transistors via the opening. At least one first portion of at least one of the gate and the drain bus lines overlaps with at least one second portion of at least one of the auxiliary capacitance and the pixel electrodes. A method for repairing the matrix substrate generally includes electrically connecting a conductor to either sides of a defect to act as a bypass.

Repairable thin film transistor matrix substrate and method of repairing the substrate

To provide a liquid crystal display device which allows disconnection defects caused in the manufacturing process to be readily repaired with a higher success rate than conventional cases so that the device can be modified into a non-defective device, and a defect repairing method therefor. In a liquid crystal display device having a lead-out portion provided at a lowermost layer bus line formed on a transparent insulating substrate , and a pixel electrode layer formed on the lead-out portion through insulating layers , an independent intermediate conductive layer is formed between the lead-out portion and said pixel electrode layer

Liquid crystal display device and defect repairing method therefor

It is intended to provide a manufacturing method of a liquid crystal display that can reduce the manufacturing cost by decreasing the number of masks. A gate insulating film, a semiconductor film, and a silicon nitride film are laid on a substrate on which a gate bus line is formed, back exposure is performed by using the gate bus line as a mask, and the silicon nitride film is then patterned, whereby a channel protective film is formed along the gate bus line. Two device isolation holes are formed over the gate bus line at two locations that are on both sides of a source electrode and a drain electrode and that are separated from each other in the extending direction of the gate bus line. A thin-film transistor is formed in such a manner that a semiconductor active film is formed by a portion of the semiconductor film that is interposed between the two device isolation holes and is thereby electrically isolated from other pixel regions and that a gate electrode is formed by a portion of the gate bus line that is located between the two device isolation holes.

Manufacturing method of a liquid crystal display

Repairable thin film transistor matrix substrate having overlapping regions between auxiliary capacitance electrodes and drain bus

A thin film transistor matrix including: a plurality of thin film transistors disposed in a matrix shape on a transparent insulating substrate, each thin film transistor having a gate electrode, a source electrode and a drain electrode; a pixel electrode formed on the transparent insulating substrate and connected to the source electrode of each of the plurality of thin film transistors; a plurality of gate bus lines connected to the gate electrode, disposed as a whole along a row direction on the transparent insulating substrate, and including a first lamination of a first metal layer and an underlying first semiconductor layer; and a plurality of drain bus lines connected to the drain electrode, disposed as a whole along a column direction on the transparent insulating substrate, and including a second lamination of a second metal layer and an underlying second semiconductor layer.

Thin film transistor matrix with repairable bus line

A method of forming a pattern of metal elements arranged with very small gaps therebetween on a substrate in magnetic bubble memory devices, semiconductor devices, and the like. In this method, first, a pattern forming layer having metal portions adapted for forming pattern elements and insulating portions for providing the gaps is formed on the substrate, and thereafter the pattern forming layer is processed by using a photolithograhic technique to form the pattern. By using this method, it is possible to form a permalloy propagation pattern with gaps of a size smaller than 1 .mu.m in a magnetic bubble memory device, for example, by using conventional photolithograhic techniques.

Growing community of inventors

Yonago, Japan

Kiyoshi Ozaki