Hitachi Displays, Ltd.

Hitachi, Ltd.

Panasonic Liquid Crystal Display Co., Ltd.

Kiyoshi Ouchi

Mutsuko Hatano

Takeshi Sato

Mitsuharu Tai

Tomonori Tanoue

Kazuhiro Mochizuki

Tomoyoshi Mishima

Takahiko Muneyoshi

Makoto Kudo

Seongkee Park

Disorder in the initial orientation (pretilt angle) and active orientation of liquid crystal molecules associated with higher resolution can be reduced to achieve high image quality displays. A layer having a drive element is bonded into an adhesive layer above color filters provided on the inner surface of a rear panel. The layer with the drive element, a drive electrode (pixel electrode), and a counter electrode are buried in the adhesive layer, so that the surface on the liquid crystal layer side is smooth. An orientation film is formed on the smooth surface to have a liquid crystal orientation control capability (orientation capability). A front panel includes a transparent substrate formed of glass or resin, with a smooth surface on the liquid crystal layer side. An orientation film is formed on the smooth surface of the front panel also to have liquid crystal orientation control capability (orientation capability).

Image display device and manufacturing method of the same

An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration &#x2266;3&#xd7;10cm, nitrogen concentration &#x2266;5&#xd7;10cm, and oxygen concentration &#x2266;3&#xd7;10cm.

Semiconductor device and method for manufacturing the same

Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.

Image display device and method for manufacturing the same

The present invention provides a method of manufacturing semiconductor devices, by which InGaAs-base C-top HBTs are manufactured at low cost. Helium ions with a smaller radius are implanted into a p-type InGaAs layer (in external base regions) not covered with a lamination consisting of an undoped InGaAs spacer layer, n-type InP collector layer, n-type InGaAs cap layer, and collector electrode from a direction vertical to the surface of the external base layer or within an angle of 3 degrees off the vertical. In consequence, the p-type InGaAs in the external base regions remains p-type conductive and low resistive and the n-type InAlAs layer in the external emitter regions can be made highly resistive. By this method, InGaAs-base C-top HBTs can be fabricated on a smaller chip at low cost without increase of the number of processes.

Method of manufacturing semiconductor device

A semiconductor laser which has an active layer of a lattice strain of less than 2% of a thickness mean on a GaAs substrate and can be used in a long wavelength band of 1.3 &mgr;m band or more and a photo module which uses the semiconductor laser are provided. The semiconductor laser device has a first semiconductor layer and second semiconductor layers , the layer and the layers forming a type-II heterojunction structure, in which an energy of conduction band edge of said first conductor layer is larger than the energy of conduction band of said second semiconductor layers . The device has third semiconductor layers as barrier layers formed on both sides of said type-II heterojunction structure. In the device, the second semiconductor layers are arranged on both sides of the first semiconductor layer and the thickness of the first semiconductor layer is set in such a degree of thickness that a wave function of an electron of a quantum well formed by making the second semiconductor layer well layers is coupled.

Growing community of inventors

Kodaira, Japan

Kiyoshi Ouchi