Matsushita Electric Industrial Co., Ltd.

Kiyoshi Onaka

Masaya Mannou

When an n-type semiconductor layer is formed on a p-type semiconductor layer in a device such as a semiconductor multi-layer film, the n-type semiconductor layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously. In a double heterostructure semiconductor laser including an AlGaInP active layer and AlGaInP cladding layers, when an n-type current blocking layer is formed on the p-type cladding layer, the n-type current blocking layer is formed by adding a p-type dopant as well as an n-type dopant simultaneously.

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Osaka, Japan

Kiyoshi Onaka