National Institute of Advanced Industrial Science and Technology

Taiheiyo Cement Corporation

Kiyoshi Nonaka

Masakazu Suzuki

Tomohisa Kato

Kouki Ichitsubo

Kenta Masuda

Hideaki Tanaka

A silicon carbide powder which, when used as a raw material in a sublimation recrystallization method, enables improvement in productivity of a silicon carbide single crystal by exhibiting a high sublimation rate and allowing a small amount of silicon carbide to remain without being sublimated, and enables an increase in size of the silicon carbide single crystal (for example, a single crystal wafer). The silicon carbide powder has a Blaine specific surface area of from 250 cm/g to 1,000 cm/g and a ratio of a silicon carbide powder having a particle size of more than 0.70 mm and 3.00 mm or less of 50 vol % or more with respect to a total amount of the silicon carbide powder. When a silicon carbide powder accommodated in a crucible is heated to be sublimated, a silicon carbide single crystal is formed on a seed crystal provided on an undersurface of a lid.

Growing community of inventors

Chiba, Japan

Kiyoshi Nonaka