Matsushita Electric Industrial Co., Ltd.

Mita Industrial Co., Ltd.

Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Sharp Kabushiki Kaisha Corporation

Mita Kogyo Kabushiki Kaisha

Kiyoshi Morimoto

Kiyoyuki Morita

Koichiro Yuki

Yoshihiko Hirai

Hiroshi Kimura

Masahiko Hisajima

Yoichiro Irie

Masaaki Niwa

Kenji Okada

Juro Yasui

Takashi Nagashima

Kazuhiko Yamanaka

Yutaka Shigemura

Masaharu Udagawa

Kiyoshi Shibata

Isao Yada

Yasuaki Terui

Kiyoshi Araki

Hideyuki Tanaka

Yasuhiko Yoshikawa

Seigo Shiraishi

Takashi Ohtsuka

Yoshihisa Nagasaki

Kiyonori Yamamoto

Masahiro Watashi

Shinsuke Yoshinaga

Toshihiko Yamamoto

Kenji Toyoda

Hideki Kasugai

Atsuo Wada

Masayuki Endo

Yuka Yamada

Hiroshi Kobayashi

Ichiro Yamashita

Nobuyasu Suzuki

Michihito Ueda

Masuo Kawamoto

Shigeo Yoshii

Haruyuki Sorada

Hiroshi Kutsumi

Kiyotaka Shibata

Hideaki Tsudaka

Tetsuya Matsushita

Kazuyasu Adachi

Kaoru Inoue

Makoto Kato

Nobuaki Nagao

Toru Iwata

Yasuyuki Ishiguro

Shinji Odanaka

Hiroshi Kubota

Hisashi Kunihiro

Nobuyuki Otsuka

Shin Hashimoto

Kikunosuke Tsuji

Takeshi Wakabayashi

Takatoshi Nishimura

Akihito Miyamoto

Takahiro Hamada

Masahiro Hashizume

Fumito Mizoguchi

Toshikazu Matsui

Tadakazu Ogiri

Jun Kajiwara

Masaki Sato

Takashi Miyake

Arihiro Tsunoda

Akira Nakakuma

Takuma Katayama

Hideo Yamaguchi

Takashi Maekawa

Kimihiro Murakami

Ryo Haseyama

Yoshiaki Yanagida

Hirofumi Ozaki

Kazuyuki Matsumura

Hisaki Shimosaka

Nobuo Kitao

Hiroshi Tanizawa

Included are: a laser light source which emits a plurality of laser beams; an aspherical lens which the plurality of laser beams emitted from the laser light source enters and which converts the plurality of laser beams into convergent beams; and a phosphor which is irradiated with the convergent beams from the aspherical lens as excitation beams to generate fluorescence, wherein the plurality of laser beams have different spread angles in a horizontal direction and a vertical direction and enter the aspherical lens while arranged in a direction in which the spread angle is smaller, from among the horizontal direction and the vertical direction, and the aspherical lens has a function of equalizing a light intensity in a direction in which the spread angle is larger, from among the horizontal direction and the vertical direction.

Light-emitting device and illumination device

A light source device includes: a semiconductor light-emitting device including a flat-shaped base having a first main surface on a first side and a second main surface and a semiconductor light-emitting element disposed on the first side; a first fixing component having a first through-hole and a first pressing surface that presses the first main surface; and a second fixing component having a second through-hole and a second pressing surface that presses the second main surface. The base is fixed between the first and second pressing surfaces by an engagement between a first inner surface surrounding the first through-hole of the first fixing component and a second outer surface of the second fixing component. A distance between the first and second pressing surfaces is smaller than or equal to a thickness of the base, and a void is formed lateral to the base between the first and second pressing surfaces.

Light source device

The present disclosure aims to enhance controllability of a lighting apparatus and increase durability. A lighting apparatus includes a light source; a condenser that converges first light emitted from the light source onto a predetermined focal position of a wavelength conversion element as converged light; the wavelength conversion element that receives the converged light and emits second light at an emission point; and a projection lens that projects the second light as projection light. The lighting apparatus changes the focal position of the condenser lens to change the emission point of the second light to the projection lens, thereby being capable of projecting the second light in any direction.

Lighting apparatus having electrodes that change the focal position on a wavelength conversion element, vehicle having the same and method of controlling the same

A projection apparatus of the present disclosure includes a light-emitting element for emitting excitation light, a wavelength converter for receiving the excitation light, converting the excitation light into light of a different wavelength, and emitting the converted light as radiation light, and an optical filter for receiving the radiation light. The optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light. With this configuration, the optical filter reflects long-wavelength light of wavelengths longer than wavelengths of the radiation light, thus being able to prevent the wavelength converter from being irradiated with long-wavelength light, and being able to prevent deterioration of the wavelength converter.

Projection apparatus

An illumination apparatus of the disclosure includes a semiconductor light-emitting element and a light conversion element. The semiconductor light-emitting element has a first optical waveguide and a second optical waveguide. The light conversion element has a first light converter and a second light converter. A first emitted light emitted from first optical waveguide enters the first light converter and a second emitted light emitted from the second optical waveguide enters the second light converter. First power applied to the first optical waveguide and second power applied to the second optical waveguide are independent.

Illumination apparatus

In a light source in which a semiconductor luminescence element and a phosphor are combined, red light having high color purity is efficiently radiated. The light source includes: a semiconductor luminescence element; a fixed or rotatable first wavelength converting unit; and a rotatable second wavelength converting unit. The second wavelength converting unit includes: a second wavelength converting region that absorbs output light emitted from the semiconductor luminescence element and radiates light having a second wavelength different from that of the output light; and a transmission region that transmits the output light. The first wavelength converting unit absorbs the output light to radiate light having a first wavelength longer than the second wavelength of the light, and the light having the first wavelength is transmitted through the transmission region.

Light source and image projection apparatus

A wavelength conversion member includes: a heat conducting layer; a sapphire substrate having a third surface directly contact with a second surface of the heat conducting layer and the fourth surface opposite to the third surface; and a phosphor layer having a fifth surface directly contact with the fourth surface and a sixth surface opposite to the fifth surface, the phosphor layer including phosphor. At least one of an area of a first surface and an area of the second surface of the heat conducting layer is at least 2800 times as large as an area of the sixth surface of the phosphor layer. At least one of an area of the third surface and an area of the fourth surface of the sapphire substrate is at least two times as large as the area of the sixth surface of the phosphor layer.

Wavelength conversion member, light source, and vehicle head lamp

A light-emitting device includes: a semiconductor light-emitting element which emits light of a first wavelength; and a first wavelength conversion unit which includes a first phosphor and emits light of a second wavelength by being excited by the light of the first wavelength. The first phosphor contains europium as an activator. The light of the first wavelength is emitted to the first wavelength conversion unit at 1 kW/cmor greater. 1&#x2266;&#x3b7;1/&#x3b7;1&#x2266;1.17 is satisfied where &#x3b7;1 is light output ratio of the light of the first wavelength to the light of the second wavelength, &#x3b7;1is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 5 kW/cm, and &#x3b7;1is light output ratio obtained when the light of the first wavelength is emitted to the first wavelength conversion unit at 2.5 kW/cm.

Light-emitting device and projection apparatus

A health care system includes a sampling device for sampling body fluid of a test subject, an analysis device for analyzing the sampled body fluid, and a transmission device for transmitting analytical data obtained from the analysis to a diagnosis unit, where the diagnosis unit is for diagnosing a health status of the test subject from the transmitted analytical data. Moreover, the system includes a server for storing and accumulating analytical data and/or diagnostic results, and a health-care-information display device for receiving and displaying diagnostic results.

Health management system and health management method

A server, which transmits phonetic-sound information to a plurality of client machines and reproduces the transmitted phonetic-sound information, includes a storage unit for storing a plurality of pieces of voiced phonetic-sound information whose contents are voices of a plurality of speakers in a conversation made up of the voices of the plurality of speakers. The server also includes a timing determining unit for determining reproduction timing of the plurality of pieces of voiced phonetic-sound information, and a transmitting unit for transmitting the voiced phonetic-sound information which is applicable to each client machine, so that its reproduction is executed in the reproduction timing determined by the timing determining unit.

Phonetic-sound providing system, server, client machine, information-provision managing server and phonetic-sound providing method

A non-volatile memory () which comprises an insulating substrate () having a plurality of first electrodes () extending therethrough from a front surface of the substrate to a rear surface thereof, a second electrode () formed on one surface side of the substrate (), and a recording layer () held between the first electrodes () and the second electrode () and variable in resistance value by electric pulses applied across the first electrodes () and the second electrode (), the plurality of first electrodes () being electrically connected to the recording layer () in a region constituting a single memory cell (MC). The non-volatile memory () can be reduced in power consumption and has great freedom of design and high reliability.

Non-volatile memory

A non-volatile memory, which comprises an insulating substrate () that has a first electrode () that extends through the substrate from the front surface to the rear surface thereof; a second electrode () that is formed on one side of the insulating substrate (); and a recording layer () that is clamped between the first electrode () and the second electrode () and whose resistance value varies when an electric pulse is applied across the first electrode () and the second electrode (); wherein the insulating substrate () has a layered structure composed of an organic dielectric thin film () and an inorganic dielectric layer () that is thinner than the organic dielectric thin film (); with the recording layer () being formed on the side on which the inorganic dielectric layer is formed. Use of this non-volatile memory increases the possible number of data writing cycles while saving power.

Method of fabrication of non-volatile memory

A method of driving a non-volatile memory which comprises a plurality of memory cells arranged in a two dimensional array, each having a field-effect transistor () whose gate and substrate are connected and a variable resistor element () comprising a phase change material; in which a specific voltage is applied to a specific word line (WL), bit line (BL) and voltage supply section (VA) so that a voltage which is higher than a forward rise voltage of the pn junction between the source and substrate of the field-effect transistor () is applied between the specific word line (WL) and bit line (BL), and then the voltage applied to the word line (WL) is rapidly or gradually returned to the initial voltage to change an applicable variable resistor element () into the high or low resistance state, whereby data is deleted or recorded, and data is read by turning on the field-effect transistor () and detecting the resistance value of the applicable variable resistor element ().

Method of driving a non-volatile memory

A voltage generating circuit comprising a capacitor (), a ferroelectric capacitor () serially connected to the capacitor (), an output terminal (), a capacitor () which grounds the output terminal (), a supply voltage supplying terminal (), a switch () which connects the supply voltage supplying terminal () and the connecting node (N) of the two capacitors (), and a switch () which connects the connecting node (N) and output terminal (); wherein during a first period, with the two switches () and () placed in the OFF state, a terminal () is grounded and a terminal () is provided with a supply voltage; wherein during a second period, the terminal () is provided with the supply voltage and the switch () is placed in the ON state; wherein during a third period, the switch () is placed in the OFF state, the switch () is placed in the ON state, and the terminal () is grounded; wherein during a fourth period, the terminal () is provided with the supply voltage; and wherein thereafter the first through fourth periods are repeated.

Voltage generating circuit, voltage generating device and semiconductor device using the same, and driving method thereof

The present invention relates to a non-volatile memory comprising: a first electrode (); a second electrode (); and a phase-change recording medium () sandwiched between the first electrode () and the second electrode (), in which resistance value is varied by applying an electrical pulse across the first electrode () and the second electrode (), at least one of the first electrode () and the second electrode () contains as a main ingredient at least one member selected from the group consisting of ruthenium, rhodium and osmium, and the phase-change recording medium () is formed of a phase-change material that contains chalcogen(s). This non-volatile memory exhibits improved durability and reliability by preventing deterioration of property (i.e., mutual impurity diffusion between the electrode and the phase-change recording medium) caused by application of current.

Non-volatile memory and fabrication method thereof

Growing community of inventors

Osaka, Japan

Kiyoshi Morimoto