Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Citizen Watch Company, Ltd.

Sinfonia Technology Co., Ltd.

Kiyoshi Mori

Junichi Tsuchimoto

Yutaka Inaba

Tamotsu Ogata

Masami Matsumoto

Masami Shirosaki

Takuro Kohyama

Akinobu Teramoto

Hirotsugu Shiraiwa

Yoshiyuki Ohishi

Toshifumi Kitahara

Kunitada Hatabayashi

Tamotu Ogata

A culture container linkage device according to the present disclosure includes a first actuator configured to advance or retract needles, an actuator holder rotatably provided on a frame and configured to hold the first actuator, a second actuator, and a washer configured to wash the needles. The second actuator rotates the needles via the actuator holder. The needles are configured to be positioned, by the second actuator, at a container-facing position at which the needles face a culture container and a washing-facing position at which the needles face the washer.

Culture container linkage device, culture system, and method for washing needle

A disk drive apparatus according to the present invention includes a horizontal guide mechanism and a vertical guide mechanism, which are disposed between a frame () and a slider () for slidably guiding the slider (). The horizontal guide mechanism includes an engaging piece () disposed in at least one of the frame () and the slider () and an engaging hole (), which is disposed in the other and is engaged with the engaging piece (). One of the frame () and the slider (), in which the engaging piece () is formed, is made of a metallic sheet material while the engaging piece () is formed by bending part of the metallic sheet material. Forming the engaging piece () by bending part of the metallic sheet material in such a manner simplifies the structure of the disk drive apparatus according to the present invention so that the fabrication is facilitated, enabling fabricating cost to be reduced.

Disk drive

In a semiconductor device comprising a cylindrical storage node, the surface area of the storage node is increased by forming silicone grains in an amorphous silicone film by a heat treatment only to an outer wall of the cylindrical portion to thereby form a roughened surface in the outer wall, and the amorphous silicone film is left in an inner wall without conducting a surface roughening treatment to the inner wall whereby the physical strength of the cylindrical portion is maintained and the destruction and the breakage of the cylindrical portion are prevented.

Semiconductor device and method for producing a semiconductor device

Isolation regions are formed on a silicon substrate to isolate NMOS and PMOS regions in which to form NMOS and PMOS transistors respectively. A silicon oxide film and an amorphous silicon film are formed as a gate insulating film on the silicon substrate N-type impurities are injected into the NMOS regions (FIG. A). A WSi film is formed on the amorphous silicon film and N-type impurities are injected only into the PMOS regions of the film (FIG. C). A silicon oxide film and a silicon nitride film are formed on the WSi film and then etched into gate electrodes (FIG. E).

Semiconductor device and method for manufacturing the same

In a fabrication method of semiconductor device, a storage node connected to one of source/drain regions of an MOS (Metal Oxide Semiconductor) transistor provided at a semiconductor substrate is formed along a trench provided through a silicon nitride film, a BPTEOS (Boro Phospho Tetra Ethyl Ortho Silicate) film and a silicon oxide film grown at low temperature. The silicon oxide film grown at low temperature is formed by either atmospheric pressure CVD (chemical vapor deposition) or plasma CVD. Also, a sidewall protection film is formed so as to prevent shorting between adjacent capacitors by growing a film at low temperature. Thus, a semiconductor device of high performance and high reliability can be provided even in a system LSI (Large Scale Integrated circuit) in which a memory circuit and logic circuit are embedded.

Fabrication method of semiconductor device with capacitor

Improvements are realized in the coverage characteristics of a cell plate electrode with respect to a cylindrical storage node electrode which has a high aspect ratio (height/diameter) and a surface having minute irregularities formed thereon, thereby improving the electrical characteristics and reliability of a semiconductor device. The semiconductor device is manufactured through a step of forming a first cell plate electrode film on a cylindrical storage node electrode, a process of implanting conductive impurities into the first cell plate electrode film, and a process of forming a second cell plate electrode film on the first cell plate electrode film.

Semiconductor device and manufacturing method thereof

On the photo mask are drawn product patterns and mask dimension inspection marks to be arranged around the respective product patterns. Each of the mask dimension inspection marks includes a line pattern having a width equal to a line width of the product pattern. Further, each of the mask dimension inspection marks includes a reference pattern that is disposed adjacent to the line pattern. A width of the mask dimension inspection mark is wider than that of the line pattern.

Photo mask to be used for photolithography, method of inspecting pattern defect, and method of manufacturing semiconductor device through use of the mask

A manufacturing method of a semiconductor device obtaining performances respectively required in a MOS transistor in semiconductor memories and a MOS transistor in logic devices even in case of manufacturing a system LSI combining the semiconductor memories with the logic devices. Forming silicide films in a logic device region makes it possible to reduce the resistivity of diffusion regions and a conductive film of polysilicon or the like that will serve as an electrode of a resulting MOS transistor. Therefore, the semiconductor devices can be manufactured in which such the MOS transistor can be used as the MOS transistor in the logic devices that is required to operate at high speed and the MOS transistor is also formed in a DRAM or the like where miniaturization is required. Since no alternation is made of the structures of the respective MOS transistors, a semiconductor device whose performance is equivalent to that of the conventional counterpart can be manufactured.

Manufacturing method of semiconductor device

After a bottom electrode,of a capacitor is formed, a nitride film as an insulating film,of the capacitor is formed on the bottom electrode,by CVD. Then, the insulating film,is wet-oxidized at a temperature in a range of 700&deg; C. to 760&deg; C. Finally, a top electrode,of the capacitor is formed on the insulating film,The insulating film,forming step includes a substep of increasing the temperature of a silicon wafer to a CVD reaction temperature in an ammonia atmosphere.

Manufacturing method of a semiconductor device

Semiconductor device having stacked capacitor structure

A method of manufacturing a semiconductor device including a capacitor having an increased capacity with improved yield is provided. Ions are implanted at an incidence angle of 0&deg; in a dose of 8&times;10,atom/cm,, at an energy of 20 keV, using a heavy current device and an amorphous silicon film having an upper surface flattened is formed. Only the flattened amorphous silicon film formed on the upper surface of an interlayer oxide film is etched back to form a storage electrode.

Method of manufacturing semiconductor device

An amorphous silicon film is formed on an interlayer insulating film to cover an upper surface of the interlayer insulating film, and a side surface and a bottom surface of an opening formed at the interlayer insulating film. Phosphorus ions are implanted into the amorphous silicon film. The phosphorous ions are implanted into the amorphous silicon film located on the upper surface of the interlayer insulating film to prevent crystal grains from growing, and thus a polysilicon film having no hemispherical grains is formed. Accordingly, a semiconductor device having capacitors with respective storage nodes adjacent to each other that are electrically isolated properly is obtained.

A polysilicon film having a rough surface is formed by a reduced pressure CVD method at a temperature of 575.degree. C. and a deposition pressure of 0.2 Torr. Silicon ions are implanted into the polysilicon film having a rough surface. Thus, the tips of concaves and convexes at the rough surface of the polysilicon film are rounded. Then, this polysilicon film having a rough surface is patterned to form a storage node. A cell plate is formed to cover the storage node with a capacitor insulating layer therebetween. Consequently, a semiconductor device capable of suppressing leak current between capacitor electrodes can be manufactured.

Method of manufacturing a semiconductor device having a capacitor

It is an object to obtain a semiconductor device free from a necessity of stacking a contact hole and a lower electrode, thus preventing occurrence of an error in stacking and enabling the capacitor to be formed precisely. Amorphous silicon 10b is deposited on a interlayer insulating film 9 including the inside portion of the contact hole 9a, and then a resist 14 is applied to the amorphous silicon 10b. Then, a mask for photolithography which has been used to form the contact hole 9a is used to perform a photolithography process to form the resist 14 to have a required shape. Then, implantation of phosphorus ions is performed such that the resist 14 is used as a mask 14a for preventing implantation of ions. Then, the amorphous silicon 10b is subjected to heat treatment to partially single crystallize the amorphous silicon 10b so that single crystal silicon 10c is grown. The difference in the etching rate between the amorphous silicon 10b and the single crystal silicon 10c is used to selectively remove the amorphous silicon 10b by using dry etching technique so that a storage node 10 is formed.

Method of manufacturing a semiconductor device having a single crystal

In the semiconductor device according to the invention, a tubular storage node is formed, then slanting rotation implantation of impurity phosphorus ions is executed for changing the phosphorus concentration and the etching rate at the thermal phosphoric acid treatment time is changed for roughening the surface under good control. Since the surface roughening does not extend to the center of the film of the storage node, the strength of the storage node can be held sufficient. Therefore, the capacitance can be increased.

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Tokyo, Japan

Kiyoshi Mori