Hitachi, Ltd.

Other

Kiyoshi Miyake

Terunori Warabisako

Moriaki Fuyama

Noriyuki Ohnaka

Kenya Ohashi

Naoyuki Miyata

Keizo Suzuki

Eiichi Murakami

Hideo Sunami

Masato Isogai

Takayoshi Seki

ShinIchiro Kimura

Takao Miyazaki

Keiji Arimatsu

Yasunori Ohno

Akira Shintani

Kenichi Natsui

Yukio Nakagawa

Koukichi Ouhata

Shin-ichiro Kimura

A highly corrosive-resistant metal having a high purity and a specific plane index is manufactured by ion beam deposition (IBD). A thin film having less defects and impurities is obtained. A magnetoresistant effect film for a magnetoresistant effect type magnetic head which is highly corrosion-resistant and exhibits excellent characteristics can be formed. In IBD according to the present invention, metal ions are provided with adjusted ion energy of 10 to 100 eV, and a metal having a particular mass number is selected by a mass separation electromagnet.

Magnetic disk device having a corrosion resistant magnetoresistive head

Corrosion-resistant laminate which consists of a metal of a single mass

This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.

Method and apparatus for forming a film

A method of forming a thin film wherein a gas which contains an element used to constitute a desired thin film as at least a part of its constituent elements or a condensed solid layer of this gas is irradiated with a high output power laser beam to dissociate the gas or the solid layer of the gas and thereby locally produce a plasma, and a substrate is irradiated with reactive particles produced in the plasma, thereby obtaining a highly-pure high-quality thin film. Also disclosed is an apparatus for realizing this method.

Method of and apparatus for forming a thin film

An insulator film can be formed at a low temperature without any damage to a substrate to be treated by a plasma in a plasma treatment system which comprises a magnetron for generating a microwave, an isolator for isolating a wave guide from the magnetron, a discharge tube for generating a plasma, the wave guide for leading the microwave from the magnetron to the discharge tube, a vacuum chamber integrally formed together with the discharge tube, an evaporation source provided in the vacuum chamber, a substrate to be treated and provided at a position to sandwich a stream of the plasma between the substrate and the evaporation source, electromagnets provided around the discharge tube and the vacuum chamber, and a manipulator for manipulating the substrate, the electromagnets generating a magnetic field to confine the stream of the plasma.

Plasma treatment system

A cusp field is applied between a plasma source of a vacuum chamber of a plasma anodization system and a substance such as a semiconductor substrate or a metal plate to be oxidized so that the substance may not be adversely affected by the plasma. The temperature control can be conducted independently of the plasma generating condition because the substance to be treated is not adversely affected by the plasma in a direct manner.

Plasma anodization system

Cadmium-tin oxide films are prepared by d-c reactive sputtering of Cd-Sn alloys in Ar-O.sub.2 mixtures. The films obtained have low resistivity of the order of 10.sup.-3 -10.sup.-4 .OMEGA.-cm and high optical transparency depending upon deposition conditions.

Transparent conductive films and methods of producing same

Growing community of inventors

Katsuta, Japan

Kiyoshi Miyake