Shin-etsu Handotai Co., Ltd.

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Shin-etsu Chemical Co., Ltd.

S.o.i.tec Silicon on Insulator Technologies

S.o.i. Tec Silicon on Insulator Technologies, S.a.

Kiyoshi Mitani

Hiroji Aga

Isao Yokokawa

Masatake Nakano

Masatake Katayama

Naoto Tate

Thierry Barge

Tsuyoshi Ohtsuki

Susumu Kuwabara

Norihiro Kobayashi

Fumio Tahara

Kazushi Nakazawa

Shinichi Tomizawa

Shigetoshi Sugawa

Bruno Ghyselen

Yoshihiro Kubota

Tadahiro Ohmi

Christophe Maleville

Atsuo Ito

Wei Feng Qu

Kiyoshi Demizu

Yuuki Ooi

Katsuo Yoshizawa

Yukio Inazuki

Toshiaki Iwamatsu

Hideki Naruoka

Junichiro Furihata

Jun-ichiro Furihata

Shoji Akiyama

Nobuhiko Noto

Kiyotaka Takano

Takatoshi Nagoya

Toru Takahashi

Wei Feig Qu

Shigenori Saisu

Susumu Kuwahara

Hiroyuki Takahashi

Masae Wada

Tsutomu Sato

Masahiro Sakai

Naota Tate

The invention provides a method for manufacturing a bonded substrate by bonding a base substrate to a bond substrate through an insulator film, including: a porous layer forming step of partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; an insulator film forming step of changing the porous layer into the insulator film, and thereby forming the insulator film whose thickness partially varies on the bonding surface of the base substrate; a bonding step of bonding the base substrate to the bond substrate through the insulator film; and a film thickness reducing step of reducing a film thickness of the bonded bond substrate to form a thin-film layer. As a result, there is provided the method for manufacturing a bonded substrate that enables obtaining an insulator film whose thickness partially varies with use of a simple method.

Bonded substrate and manufacturing method thereof

A method for manufacturing a bonded substrate that has an insulator layer in part of the bonded substrate includes: partially forming a porous layer or forming a porous layer whose thickness partially varies on a bonding surface of the base substrate; performing a heat treatment to the base substrate having the porous layer formed thereon to change the porous layer into the insulator layer, and thereby forming the insulator layer whose thickness partially varies on the bonding surface of the base substrate; removing the insulator layer whose thickness varies by an amount corresponding to a thickness of a small-thickness portion by etching; bonding the bonding surface of the base substrate on which an unetched remaining insulator layer is exposed to a bond substrate; and reducing a thickness of the bonded bond substrate and thereby forming a thin film layer.

Method for manufacturing bonded substrate having an insulator layer in part of bonded substrate

In a manufacturing method for manufacturing a silicon on insulator (SOI) wafer, an ion injection layer is formed within the wafer, by injecting a hydrogen ion or a rare gas ion from a surface of the single crystal silicon wafer, the ion injection surface of the single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone, the ion injection surface of the single crystal silicon wafer is bonded to the surface of the transparent insulation substrate, by bringing them into close contact with each other at room temperature, with the processed surface(s) as bonding surface(s), and an SOI layer is formed on the transparent insulation substrate, by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer.

Silicon on insulator (SOI) wafer and process for producing same

A method for producing a semiconductor wafer having a multilayer film, in production of a semiconductor device by the steps of forming a porous layer on a surface of a semiconductor wafer by changing a surface portion into the porous layer, forming a semiconductor film on a surface of the porous layer to produce a semiconductor wafer having a multilayer film, fabricating a device on the semiconductor film, and producing the semiconductor device by delaminating the semiconductor film along the porous layer, the semiconductor film having the device formed thereon, including flattening the semiconductor wafer after delaminating and reusing the flattened semiconductor wafer, the method further including a thickness adjusting step of adjusting a whole thickness of the semiconductor wafer having a multilayer film to be produced by reusing the semiconductor wafer so as to satisfy a predetermined standard.

Semiconductor substrate having multilayer film and method to reuse the substrate by delaminating a porous layer

A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.

Method for evaluating oxide dielectric breakdown voltage of a silicon single crystal wafer

Ion injection is performed to a single crystal silicon wafer to form an ion injection layer, with the ion injection surface of the single crystal silicon wafer and/or the surface of the transparent insulation substrate are/is processed using plasma and/or ozone. The ion injection surface of the single crystal silicon wafer and the surface of the transparent insulation substrate are bonded to each other by bringing them into close contact with each other at room temperature. A silicon on insulator (SOI) wafer is obtained by mechanically peeling the single crystal silicon wafer by giving an impact to the ion injection layer, to form an SOI layer on the transparent insulation substrate, and thermal processing for flattening the SOI layer surface is performed to the SOI wafer, under an atmosphere of an inert gas, a hydrogen gas, and a mixture gas of them.

A method for producing a semiconductor wafer, including epitaxially growing a SiGelayer (0&#x3c;X&#x2266;1) on a surface of a silicon single crystal wafer to be a bond wafer; implanting at least one kind of a hydrogen ion or a rare gas ion through the SiGelayer and forming an ion-implanted layer inside the bond wafer; contacting and bonding a surface of the SiGelayer and a surface of a base wafer through an insulator film; then performing delamination at the ion-implanted layer; performing a bonding heat treatment of binding the bonded surfaces; and then removing a Si layer of a delaminated layer transferred to a side of the base wafer by the delamination. Thereby, the method does not cause lattice relaxation in the SiGe layer. Therefore, the method is suitable for production of a semiconductor wafer for high-speed semiconductor devices.

Method for producing semiconductor wafer

Disclosed is a method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, where the SiGe layer is an outermost surface of the SiGe layer and then cleaning the multilayer substrate with a first cleaning liquid capable of etching the protective film so that the protective film remains. The protective film prevents roughening of the surface of the SiGe layer while the cleaning is performed. The cleaning is performed. The cleaning is performed so that a thickness of the remaining protective film is from 1 nm to 100 nm.

Method for cleaning a multilayer substrate and method for bonding substrates and method for producing a bonded wafer

In a first ion implantation step (a1), a delamination-intended ion implantation layeris formed by implanting ions at a dosage less than a critical dosage from the insulating filmside of a bond wafer. In an additional function layer deposition step (b2), an additional function layeris deposited on the insulating filmof the bond wafer. In a second ion implantation step (c1), by implanting ions at a dosage, the delamination-intended ion implantation layeris matured into a delamination ion implantation layer'. Thereby, the delamination ion implantation layer is formed by two steps of ion implantation having the additional function layer deposition step therebetween, and therefore non-uniformity of the additional function layer does not influence uniformity of a film thickness of a bonded semiconductor thin layer.

Manufacturing method of bonded wafer

The present invention provides a SOI wafer produced by an ion implantation delamination method wherein a width of a SOI island region in a terrace portion generated in an edge portion of the SOI wafer where a surface of a base wafer is exposed is narrower than 1 mm and a density of pit-shaped defects having a size of 0.19 &#x3bc;m or more existing in a surface of a SOI layer detected by a LPD inspection is 1 counts/cmor less, and also provides a method for producing the SOI wafer. Thereby, there is provided a SOI wafer produced by an ion implantation delamination method wherein generation of SOI islands generated in delamination can be suppressed and a defect density of LPDs existing in a surface of the SOI wafer can be reduced, and a method for producing the same, so that device failure can be reduced.

SOI wafer and method for producing the same

The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a SiGelayer (0&#x3c;X&#x3c;1) on an SOI wafer, forming a SiGelayer (0&#x2266;Y&#x3c;X) on the epitaxially grown SiGelayer, and then enriching Ge in the epitaxially grown SiGelayer by an oxidation heat treatment so that the SiGelayer becomes an enriched SiGe layer, wherein, at least, the oxidation heat treatment is initiated from 950&#xb0; C. or less under an oxidizing atmosphere, and the oxidation is performed so that the formed SiGelayer remains during a temperature rise to 950&#xb0; C. Thereby, there can be provided a method for producing a semiconductor wafer by which the lattice relaxation of the SiGe layer in an SGOI wafer can be sufficiently performed by a heat treatment for a short time and its production cost can be reduced.

This invention relates to a method of fabricating a bonded waferin which a bond waferand a base wafer, both of which are composed of silicon single crystal, are bonded while placing an oxide filmin between, and the bond waferis thinned. Use of modified chemically-etched wafers as both of the bond waferand base waferis successful in reducing an unbonded area UA therebetween after annealing for bonding, where the modified chemically-etched wafer refers to a wafer which is etched by alkali etching and succeeding acid etching, while setting etching amount larger in the alkali etching than in the acid etching.

Method of fabricating bonded wafer

The present invention provides a method of producing an SOI wafer, comprising at least steps of forming an oxygen ion-implanted layer by implanting oxygen ions into a silicon wafer from one main surface thereof, subjecting the silicon wafer to oxide film-forming heat treatment to convert the oxygen ion-implanted layer into a buried oxide film, and thereby producing an SOI wafer having an SOI layer on the buried oxide film, wherein when the buried oxide film is formed in the silicon wafer, the buried oxide film is formed so that a thickness thereof is thicker than a thickness of the buried oxide film which the SOI wafer to be produced has, and thereafter the silicon wafer in which the thicker buried oxide film is formed is subjected to a heat treatment to reduce the thickness of the buried oxide film. Thereby, there can be provided a method of producing an SOI wafer in which a high quality SOI wafer having a buried oxide film of which a film thickness is thin and perfectness is high and an SOI layer of which crystallinity and surface quality are extremely good can be produced by using SIMOX method.

Method of producing SOI wafer and SOI wafer

In order to adjust thickness of a bonded silicon single crystal filmdepending of thickness of an SOI layerto be obtained, depth of formation dtx of a separatory ion implanted layer, measured from a first main surface J, in the separatory ion implanted layer formation step is adjusted through energy of the ion implantation. Dose of the ion implantation is set smaller as the depth of formation measured from the first main surface J becomes smaller. A smaller dose results in a smaller surface roughness of the separation surface, and makes it possible to reduce polishing stock removal of the separation surface of the bonded silicon single crystal film in the planarization step. Uniformity in the thickness of the SOI layer can consequently be improved even for the case where a thin SOI layer has to be formed. The present invention is therefore successful in providing a method of fabricating an SOI wafer capable of suppressing variations in the intra-wafer and inter-wafer uniformity of the thickness of the SOI layer to a sufficiently low level, even for the case where a required level of the thickness of the SOI layer is extremely small.

Method of fabricating SOI wafer

The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.

Growing community of inventors

Gunma, Japan

Kiyoshi Mitani