Terumo Kabushiki Kaisha

Kiyoshi Komatsu

Takehisa Mori

Takeshi Kudo

Mitsuteru Kimura

Atsushi Sone

Takashi Kitamura

Masao Takinami

Ryo Tsukamoto

Hitomi Kadono

The disclosed infrared sensor comprises a substrate provided with a bridging part and a sensing part made of an infrared temperature-sensitive film formed on the bridging part. A first lid member covers the sensing part and bridging part and a second lid member covers the reverse surface of the substrate and tightly seals a cavity formed between the substrate and the bridging part. The invention preferably comprises an electrode pad electrically connected to the infrared temperature sensitive film and formed of a laminate film including an etchant-resistant electrically conductive film. The invention provides an infrared sensor with a small stable bridging structure which allows easy formation of a contact hole on an electrode pad without causing a breakage of the bridging part. A method for the production of an infrared sensor is also disclosed.

Infrared sensor and method for production thereof

An infrared sensor comprising a sensor substrate formed of a semiconducting material and at least one set of infrared sensing portions formed one each on the opposite surfaces of said sensor substrate, wherein said infrared sensing portions are superposed one each on bride portions formed on cavities formed one each on the opposite surfaces of said sensor substrate.

Infrared radiation sensor

An infrared sensor including a substrate provided with a bridging part; a detecting part composed of an infrared temperature-sensitive film formed in the bridging part; an electrode pad formed of a laminate film and an etchant-resistant electrically conductive film electrically connected to the infrared temperature-sensitive film; a first lid covering the detecting part and the bridging part; and a second lid covering another surface of the substrate and tightly closing a cavity formed between the substrate and the bridging part.

A semiconductor device includes a cavity portion formed in a supporting portion made of a semiconductor material so as to be surrounded by the supporting portion, and a silicon oxynitride film supported on one surface of the supporting portion so as to cover the cavity portion on the side of the one surface or a silicon oxynitride film supported on one surface of the supporting portion and so arranged as to form a bridged structure over the cavity portion. The composition of the silicon oxynitride film is selected in accordance with the material of the supporting portion. The former semiconductor device is produced by forming a silicon oxynitride film on one surface of a semiconductor substrate, forming an etching resistant film which has a pattern of a cavity portion, on another surface of the semiconductor substrate, and forming the cavity portion by selectively etching the semiconductor substrate using the etching resistant film as a mask until the formed cavity portion reaches said silicon oxynitride film. The latter semiconductor device is produced by the same process except that another step for patterning the silicon oxynitride film to form a bridge structure is included.

Semiconductor device and method for production thereof

A micro-pump having a cross-sectional area of not more than 5 mm.sup.2 and usable as a drive source for the operation of a micro-machine and as the controlled flow of a fluid and a method for the production of this micro-pump are provided. The micro-pump is characterized by comprising a comb-shaped stationary electrodes, a fluid chamber, a piston formed in the fluid chamber, comb-shaped movable electrodes formed integrally with the piston, a conductive film for imparting a grounding potential to the piston and the comb-shaped movable electrodes, and check valves and consequently having a drive source integrally formed therein.

Micro-pump and method for production thereof

A photoelectric transducer advantageously usable as an electrical energy source for driving units of work modules and sensors of a micromachine is provided. This photoelectric transducer is characterized by having a photoelectric transducing element, a self-exciting oscillating circuit, and voltage transformer and optionally further a storage mechanism formed on one substrate. It is further characterized by producing electrical power by the exposure of the photoelectric transducing element to a continuous light.

Photoelectric transducing device having a self-exciting oscillating

A contraction-extension mechanism type actuator is provided which operates with a small and simple mechanism, offers no hindrance to other work units, adopts a construction capable of fine adjustment, and enables only the leading end of a module to be freely moved while producing virtually no motion of the module itself. These objects are accomplished by a contraction-extension mechanism type actuator which is a joint array formed of a shape-memorizing alloy and provided with a contraction-extension mechanism having shape-controlling heaters integrally attached to the component joints of the array and having the joint array itself serving as its own a drive source.

Contraction-extension mechanism type actuator

An infrared radiation sensor has a bridge portion which bridges a cave portion formed in a sensor substrate. The bridge portion includes an infrared radiation receiving portion and support portions for supporting the infrared radiation receiving portion. The plane shape of the infrared radiation receiving portion is a square or a circle which has a greater side length or a greater diameter than the width of the supporting portions to increase the amount of infrared radiation received by the infrared receiving portion.

Growing community of inventors

Kanagawa, Japan

Kiyoshi Komatsu