Tohoku University

Stanley Electric Co., Ltd

Sakai Chemical Industry Co., Ltd.

Fuji Ceramics Corporation

Nikon Corporation

Japan Science and Technology Corporation

Dowa Electronics Materials Co., Ltd.

Kiyoshi Kanie

Atsushi Muramatsu

Takuya Kazama

Satoru Sueda

Wataru Tamura

Yasuyuki Miyake

Atsuki Terabe

Hideto Mizutani

Hirofumi Takahashi

Yasuhiro Okamoto

Ryoko Suzuki

Kenji Moriyama

Takashi Kato

Akira Nagatomi

Hiroyuki Ohno

Masahiro Yoshizawa

Yasutaka Nishi

Koji Tanoue

Makoto Nakazumi

Kazuhisa Saito

Masafumi Yoshio

Takayuki Omori

Single-phase manganese oxide particles having a wurtzite crystal structure. The particles can be obtained by thermally decomposing a compound containing manganese. In this procedure, a reducing agent consisting of at least one of a polyol-based material and an ethylene glycol stearate-based material is added as an additive to the reaction system. It is heated at a first temperature (200° C. or lower) under a reduced pressure atmosphere, then the temperature is raised, and the product is heated at a temperature higher than the first temperature under an inert gas atmosphere.

Wurtzite-type manganese oxide particles and method for producing same

A method for manufacturing Group-III nitride semiconductor nanoparticles includes synthesizing Group-III nitride semiconductor nanoparticles having a particle size of 16 nm or less by reacting materials containing one or more Group-III elements M in a liquid phase, wherein a coordination solvent is used, and trimethyl M is used as at least one Group-III element material among the materials containing one or more Group-III elements M.

Group-III nitride semiconductor nanoparticles, core-shell-type particles, and method for manufacturing same

Provided are ITO particles having a non-rectangular parallelepiped shape and an aligned crystal orientation inside particles.

ITO particles, dispersion, production method of ITO particles, production method of dispersion, and production method of ITO film

Provided are group-III nitride nanoparticles that prevent the piezoelectric field caused by strains on the nanoparticles, achieving good luminous efficiency. The group-III nitride nanoparticle represented by AlGaInN (0&#x2264;x, y, z&#x2264;1) incorporating two crystal structures; a wurtzite structure and a zincblende structure, in a single particle. As another example, the group-III nitride nanoparticle has a core-shell structure with a core and a shell, in which the particle constituting the core contains two crystal structures; the wurtzite structure and the zincblende structure, in the particle. Nanoparticles containing the two crystal structures can be produced by using a phosphorus-containing solvent as a reaction solvent, and the mixture ratio of the two crystal structures, (wurtzite structure)/(zincblende structure), is 20/80 or higher.

Group-III nitride semiconductor nanoparticles and production method thereof

Provided is ITO particles satisfying a relationship expressed in Expression (1) given below. 16&#xd7;S/P&#x2264;0.330 . . . (1) (In the expression, S indicates a particle area in a TEM photographed image, and P indicates a perimeter of the particle).

ITO particles, dispersion, and production method of ITO film

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of the particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. One of specifically disclosed is a method of producing a substantially rectangular cuboid particulate alkali metal niobate represented by MNbO(1), wherein M represents one element selected from alkaline metals, including specific four steps. Another one of specifically disclosed is particulate alkali metal niobate represented by the formula (1) having a substantially rectangular cuboid shape, wherein the substantially rectangular cuboid shape has a longest side and a shortest side, the length of the longest side represented by an index Lis 0.10 to 25 &#x3bc;m, and the length of the shortest side represented by an index Lis 0.050 to 15 &#x3bc;m.

Method for producing alkali metal niobate particles, and alkali metal niobate particles

Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): NaKNbO(1), the method including four specific steps, wherein a high-concentration alkaline solution containing Naion and Kion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.

A production method capable of producing ITO particles without using a solvent with a high boiling point as a solvent used in the producing step by a simple treatment method without through a heating process in an atmosphere which disadvantageously causes sintering among the ITO particles to coarsen the ITO particles. An ITO powder suitable for a coating material for a transparent electroconductive material, being produced by a first step of dissolving salt containing indium and salt containing tin into an organic solvent, then adding to this organic solvent, an organic solvent containing a basic precipitant, to thereby manufacture a mixture of a precursor containing indium and tin, and the organic solvent; and a second step of applying heat treatment to the mixture of the precursor containing indium and tin, and the organic solvent in a pressurizing vessel at 200&#xb0; C. or more and 300&#xb0; C. or less, to generate ITO particles.

Method of producing ITO particles

A novel liquid-crystalline ionic conductor, which is useful in the electric, electronic, chemical and bioengineering fields, as an anisotropic reaction solvent, ionic conductor, electric field-responsible conductor or the like, and a method for producing the same, is provided. The liquid-crystalline ionic conductor is obtained by mixing an organic molten salt with a-liquid-crystalline organic molecule or a liquid-crystalline inorganic molecule, which comprises a moiety miscible to the organic molten salt and a moiety that shows liquid-crystalline orientation, thereby forming a liquid-crystalline ionic conductor, wherein the organic molten salt is assembled to the liquid-crystalline molecule.

Liquid-crystalline ionic conductor and method for producing the same

Growing community of inventors

Miyagi, Japan

Kiyoshi Kanie