Inoue-japax Research Incorporated

Hitachi, Ltd.

Renesas Technology Corp.

Sony Corporation

Kabushiki Kaisha Toshiba

Nissan Motor Company Limited

Hitachi Tohbu Semiconductor, Ltd.

Renesas Electronics Corporation

Tokyo Shibaura Denki Kabushiki Kaisha

Toshiba Kikai Kabushiki Kaisha

Kayaba Kogyo Kabushiki Kaisha

Ichikoh Industries, Ltd.

National Research Institute for Metals

Hitachi Ulsi Engineering Corp.

Hitachi Hokkai Semiconductor Ltd.

Kiyoshi Inoue

Kunihiro Katayama

Takayuki Tamura

Shigemasa Shiota

Akihiko Shimizu

Masashi Naito

Satoshi Watatani

Yooichi Shintani

Eiki Kamada

Kazunori Kuriyama

Tohru Shonai

Hirohiko Sagawa

Masahiro Abe

Kazumasa Yanagisawa

Yuji Toda

Sadao Sano

Makoto Onoue

Toshio Sugano

Seiichiro Tsukui

Hideo Kaneko

Masashi Horiguchi

Masakazu Aoki

Tsutomu Ishii

Toshio Sasaki

Masaru Ohki

Akira Ichikawa

Takanori Shimura

Yasunari Obuchi

Tsutomu Takamori

Kazuhiko Sagara

Takashi Teraoka

Shigeru Honjo

Tomoko Sakiyama

Shigeru Suzuki

Kiyoshi Arai

Hiroshi Sakou

Eiji Oohira

Makoto Wagatsuma

Toru Takamura

Jun Hayakawa

Jinzo Yabe

Toru Takahashi

Hirotaka Nishizawa

Toshio Yamada

Takeo Ito

Jun Fujita

Masamichi Ishihara

Hidetoshi Iwai

Yasunori Yamaguchi

Makoto Nishizawa

Yutaka Yamaguchi

Takashi Itoh

Katsumi Kimura

Tetsuro Kato

Tadaharu Yokota

Kyoji Tachikawa

Akira Yamaoka

Masahiro Yamamura

Norio Ebihara

Jiro Sawada

Hiroshi Katsuta

Tadao Kaji

Hiroyuki Fujiki

Ichiro Ninomiya

Kazumasa Togano

Kenichi Yamaguchi

Minoru Watanabe

Mitsuhiro Oikawa

Takeo Nishijima

Takashi Araki

Takashi Hosotani

Masataka Mukai

Masao Asada

Yasumasa Sugiyama

Noboru Shiozawa

Shinobu Takeura

Norihiko Kasai

Masakatsu Kaburagi

Ryoji Tominaga

Kunihiko Noda

Masao Naito

Yoshiharu Michiura

Ichirou Anjou

Christopher Grey

Mitsuo Nakamura

Satoru Kusaka

Hirotaka Sekino

Takayuki Kishimoto

Naoki Yoshida

Masakatsu Goto

Yoshiaki Anata

Yasushi Sekine

Tetsuji Kohara

Sadao Morita

Tomoyoshi Miura

Mutsuo Tsukuda

Shigeru Kato

Susumu Matsuura

Kenji Maekawa

A nonvolatile memory apparatus includes a control unit, a main storage medium with an electrically reloadable nonvolatile memory adapted to be operable even when faulty memory cells exist therein, and a storage region storing registered address values of faulty regions of the main storage medium containing the faulty memory cells. Data which is stored in the electrically reloadable nonvolatile memory is divided into blocks, each block having a plurality of data to be administrated and which is assigned an access address by the control unit. An administrative information region is provided in each block. The control unit carries out access requests of the main storage medium and the administration of faulty regions and the number of occurrences of reloading of respective memory cells of the main storage medium.

Semiconductor memory device having faulty cells

In response to a read command received by a system interface unit for accessing a plurality of blocks of data stored in said non-volatile semiconductor memory, a controller carries out selective read operations of blocks of data to two memories from the non-volatile semiconductor memory. The controller also carries out parallel operations of data transferring a first block of data, which has already been subjected to error detection and error correction operations by an error correction unit, from one of the two memories to a host system via said system interface unit and of data transferring of a second block of data to be subjected to the error detection and error correction operation, from said non-volatile semiconductor memory to the other of the two memories.

Nonvolatile memory with faulty cell registration

In a nonvolatile memory apparatus, a system bus receives address, command, and/or control signals. Memory cells store bits of data by shifting a threshold voltage to one of plural ranges. In writing a first page, the threshold voltage of a first memory cell remains in a first range or shifts into a second range. In writing a second page, the threshold voltage remains in the first or second voltages, or shifts into a third range from the first range or into a fourth range from the second range. Before writing the second page, the memory reads data from the first memory cell for generating the second page writing data. A shifting direction of the threshold voltage from the first to the second range is the same as a shifting direction from the first to the third range.

Semiconductor memory having electrically erasable and programmable semiconductor memory cells

An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cells to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.

In a power steering device employing a hydraulic power cylinder, a motor-driven pump, and a driving power source for the motor, a power steering control system is configured to electrically connected to at least the motor and the power source for controlling a driving state of the motor and a power source voltage of the power source. The power steering control system includes a motor control circuit that generates a motor driving signal, whose command signal value is determined based on a steering assist force applied through the power cylinder to steered road wheels, a booster circuit that boosts the power source voltage, a motor angular acceleration detection circuit that detects or estimates a motor angular acceleration, and a booster-circuit control circuit that controls, responsively to the motor angular acceleration, switching between operating and non-operating states of the booster circuit.

Power steering device

A steering angle of steered wheels and a vehicle speed of a fork-lift truck are respectively detected by sensors (). A CPU () compares the vehicle speed with a predetermined speed (S), and causes a meter () to display the steering angle when the vehicle speed is lower than the predetermined speed (S, S), and causes the meter () to display the vehicle speed when the vehicle speed not lower than the predetermined speed (S, S). As a result, the space for the display device can be reduced without affecting the operation efficiency of the fork-lift truck.

Operation information display for industrial vehicle

A priority flow rate control valve () distributes pressurized working oil discharged from a hydraulic pump () driven by an electric motor () to a power steering device () first, and distributes the residual pressurized working oil to a cargo handling device (). The rotation speed of the electric motor () and the distribution ratio of the pressurized working oil of the priority flow rate control valve () vary depending on the operation states of these devices (). By decreasing the rotation speed of the electric motor () at a rate smaller than a normal decrease rate when the cargo handling device () stops operation in a state where the power steering device () and the cargo handling device () are in operation, a kickback in a steering wheel () due to a response delay of the priority flow rate control valve () can be prevented.

Hydraulic pressure supply control in industrial vehicle

A control device of an injection molding machine which injects a molten resin from an injection nozzle is provided with a display section in which a touch panel is disposed, and a human-machine interface section equipped with a general-purpose operating system, and the human-machine interface section is provided with at least a storage section to store set values which are various molding conditions for each mold article and a control section which controls the display of the display section. The interface section displays, on the display section, a main screen to change settings for the molding conditions stored in the storage section and a subscreen to display indications such as monitors, and also constantly displays a change switch for a change of the screen in a fixed region of the display section.

Control device for use in injection molding machine

An electrically alterable non-volatile multi-level memory device and a method of operating such a device, which includes setting a status of at least one of the memory cell to one state selected from a plurality of states including at least first to fourth level states, in response to information to be stored in the one memory cell, and reading the status of the memory cell to determine whether the read out status corresponds to one of the first to fourth level states by utilizing a first reference level set between the second and third level states, a second reference level set between the first and second level states and a third reference level set between the third and fourth level states.

Electrically alterable non-volatile multi-level memory device and method of operating such a device

Growing community of inventors

Tokyo, Japan

Kiyoshi Inoue