Sony Corporation

Kiyoshi Hirata

Mitsuru Sato

Hideshi Abe

Yoshiaki Kitano

Nobuhiro Karasawa

Ritsuo Takizawa

Hiroaki Ohki

Jun Kuroiwa

Mitsuru Yamashita

Katsunori Kokubun

Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

Solid-state imaging device with channel stop region with multiple impurity regions in depth direction and method for manufacturing the same

Solid-state imaging devices with impurity regions between photoelectric conversion regions and methods for manufacturing the same

Solid-state imaging device with channel stop region with multiple impurity regions in depth direction

Solid-state imaging device with channel stop region with multiple impurity regions in depth direction to reduce leakage of electrical charges and method for manufacturing the same

A solid-state imaging device with a structure such that an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal V is applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area is formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area is formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device

Channel stop sections formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk) so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

Solid-state imaging device and method for manufacturing thereof as well as driving method of solid-state imaging device

A solid-state imaging device having an electrode for reading a signal charge is provided on one side of a light-receiving sensor portion constituting a pixel; a predetermined voltage signal applied to a light-shielding film formed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor area formed in the center on the surface of a first-conductivity-type semiconductor area constituting a photo-electric conversion area of the light-receiving sensor portion; and areas containing a lower impurity concentration than that of the second-conductivity-type semiconductor area formed on the surface of the first-conductivity-type semiconductor area at the end on the side of the electrode and at the opposite end on the side of a pixel-separation area.

Solid-state imaging device and driving method of solid-state imaging device

Solid-state imaging device with biased light shielding film

Channel stop sections are formed by multiple times of impurity ion implanting processes. Four-layer impurity regions are formed across the depth of a semiconductor substrate (across the depth of the bulk), so that a P-type impurity region is formed deep in the semiconductor substrate; thus, incorrect movement of electric charges is prevented. Other four-layer impurity regions of another channel stop section are decreased in width step by step across the depth of the substrate, so that the reduction of a charge storage region of a light receiving section due to the dispersion of P-type impurity in the channel stop section is prevented in the depth of the substrate.

Solid-state imaging device and method for manufacturing the same

A solid-state imaging device that has a satisfactory noise characteristic and readout characteristic is provided by improving the noise characteristic and readout characteristic in a well balanced way. The solid-state imaging device has such a structure that an electrodefor reading a signal charge is provided on one side of a light-receiving sensor portionconstituting a pixel; a predetermined voltage signal V is applied to a light-shielding filmformed to cover an image pickup area except the light-receiving sensor portion; a second-conductivity-type semiconductor areais formed in the center on the surface of a first-conductivity-type semiconductor areaconstituting a photo-electric conversion area of the light-receiving sensor portion; and areas(A,B) containing a lower impurity concentration than that of the second-conductivity-type semiconductor areais formed on the surface of the first-conductivity-type semiconductor areaat the end on the side of the electrodeand at the opposite end on the side of a pixel-separation area

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Kanagawa, Japan

Kiyoshi Hirata