Hitachi, Ltd.

Hitachi Ulsi Engineering Corp.

Kiyoshi Hayashi

Takashi Harada

Satoshi Ueno

Nobuhiro Shiramizu

Kenji Nagai

Chiyoshi Kamada

Kazutaka Masuzawa

Masahiko Nishiuma

Kazuhiro Yoshihara

Jun Kumazawa

Disclosed herein is a communication module, comprising a semiconductor chip in which channels for allowing signal converting means to convert current signals inputted from input terminals to voltage signals and outputting the same from output terminals respectively are arranged in parallel in plural form, and wherein the semiconductor chip is comprised principally of a semiconductor substrate in which a second semiconductor layer is provided on a first semiconductor layer with an insulating layer interposed therebetween, each of the signal converting means is formed in a channel forming region of the second semiconductor layer, which is defined for each channel, and the input and output terminals are formed on the channel forming regions of the second semiconductor layer with the insulating layer interposed therebetween. In the communication module, the first semiconductor layer is formed with resistivity smaller than that of the second semiconductor layer and fixed to a fixed potential, whereby the amount of transfer of noise power developed through the substrate can be lessened and crosstalk developed between adjacent channels can be reduced.

Communication module having a structure for reducing crosstalk

The present invention provides an optical interconnection receiving module that can cancel out the effect of cross talk noise caused by the input signal of another channel on the preamplifier side and the reference amplifier side, and provides suitable device structures for a bypass capacitor used to stabilize supply voltage and for a capacitance device used to cancel out the effect of cross talk noise caused by the input signal of another channel on the preamplifier side and on the reference amplifier side. According to the present invention, there are provided: a photodiode array comprising a plurality of photodiodes, each of which receives an optical signal on a plurality of channels and converts the optical signal into an electric signal; and a receiving circuit for distinguishing an input signal which comprises: a preamplifier for amplifying the electric signal converted from the optical signal by the photodiode array for each of the channels; a comparator; and a reference amplifier for generating reference voltage, wherein a plurality of capacitance devices each equivalent to the photodiode are formed on the semiconductor chip where the receiving circuit is formed, and each of the equivalent capacitance devices is connected between the input terminal of the reference amplifier and a supply voltage terminal.

Optical interconnection receiving module

For taking a characteristic impedance matching of signal transmission lines in a package which carries thereon a semiconductor chip with a very high-speed LSI formed thereon, there is provided a semiconductor integrated circuit device wherein one ends of signal transmission lines formed on a main surface of a package substrate are extended up to the position just under pads formed on a main surface of the semiconductor chip and are connected to the pads on the chip electrically through bump electrodes, while opposite ends of the signal transmission lines are extended to the outer peripheral portion of the main surface of the package substrate and outer leads are bonded thereto.

Semiconductor integrated device having parallel signal lines

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Takamatsu, Japan

Kiyoshi Hayashi