Tokyo Keiki Company Limited

Nikon Corporation

Renesas Electronics Corporation

Renesas Technology Corp.

Tokyo Keiko Co., Ltd.

Kiyoshi Hayashi

Kunihiko Takeuchi

Yasuo Shimomura

Toshiaki Iwamatsu

Kozo Ishikawa

Hirofumi Shinohara

Ryuta Tsuchiya

Takashi Terada

Atsushi Shibayama

Akio Mito

Yuji Morishige

Toshifumi Kakinuma

Yasuo Inoue

Kenji Kawai

Yutaka Suenaga

Masaaki Shinohara

Takahiro Maruyama

Yoshiyuki Shimizu

Masashi Kitazawa

Toshiro Ishiyama

Masao Oba

Fujio Baba

Yoshisuke Akita

Teruyoshi Tsunashima

Kazuyuki Kihara

Hidetoshi Tetsuka

Tsuyoshi Ando

Tomawaki Takahashi

Ichiro Tenmyo

Saburo Yajima

A semiconductor device including a well resistance element of high accuracy and high withstand voltage and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a semiconductor substrate, a well region, an input terminal, an output terminal, a separation insulating film, and an active region. The input terminal and the output terminal are electrically coupled to the well region. The separation insulating film is arranged to be in contact with the upper surface of the well region in an intermediate region between the input terminal and the output terminal. The active region is arranged to be in contact with the upper surface of the well region. The separation insulating film and the active region in the intermediate region have an elongated shape in plan view. In the intermediate region, a plurality of separation insulating films and a plurality of active regions are alternately and repeatedly arranged.

Semiconductor device with well resistor and alternated insulating and active regions between input and output terminals

An object of the present invention is to provide a semiconductor device having a fin-type transistor that is excellent in characteristics by forming a fin-shaped semiconductor portion and a gate electrode with high precision or by making improvement regarding variations in characteristics among elements. The present invention is a semiconductor device including a fin-shaped semiconductor portion having a source region formed on one side thereof and a drain region formed on the other side thereof, and a gate electrode formed between the source region and the drain region to surround the fin-shaped semiconductor portion with a gate insulating film interposed therebetween. One solution for solving the problem according to the invention is that the gate electrode uses a metal material or a silicide material that is wet etchable.

Semiconductor device and method for manufacturing the same

There are provided a semiconductor device which can be miniaturized without being deteriorated in characteristics, and a manufacturing method thereof. The semiconductor device includes a semiconductor substrate having a main surface, a source region and a drain region formed apart from each other in the main surface, a gate electrode layer formed over the main surface sandwiched between the source region and the drain region, a first conductive layer formed so as to be in contact with the surface of the source region, and a second conductive layer formed so as to be in contact with the surface of the drain region. A recess is formed in the main surface so as to extend from the contact region between the first conductive layer and the source region through a part underlying the gate electrode layer to the contact region between the second conductive layer and the drain region.

Semiconductor device having gate in recess

Provided are a semiconductor device comprising a polymetal gate electrode that can prevent formation of a silicide layer at the interface between metal and conductive silicon and also exhibit low resistance property and ohmic property, and a method for manufacturing the same. Specifically, a polymetal gate electrode is formed via a gate insulating film ( ), e.g., an oxide film, on a semiconductor substrate ( ), e.g., a silicon substrate. The polymetal gate electrode has such a structure that a conductive silicon film ( ), e.g., a poly-Si film, a silicide film ( ), e.g., a WSi film, a barrier film ( ), e.g., a WSiN film, and a metal film ( ), e.g., a W film, are stacked over the semiconductor substrate ( ) in the order named.

Semiconductor device and CMOS transistor

A high-performance dioptric reduction projection lens and projection exposure apparatus and projection exposure method using same. The projection lens includes six lens groups and has a positive negative positive negative positive refractive power arrangement. The third and fifth lens groups have overall positive refractive power and include at least three lens elements having positive refractive power. The fourth lens group has negative refractive power and includes at least three lens elements having negative refractive power. At least one lens element in either the fourth lens group or the fifth lens group includes an aspheric surface. The projection lens preferably satisfies at least one of a number of design conditions.

Projection lens system and apparatus

A large aperture wide angle zoom lens system including four groups of lenses. The four lens groups, viewed from the object side, include a first group with negative refractive power, a second group with positive refractive power, a third group with negative refractive power, and a fourth group with positive refractive power. The zoom lens system is capable of maintaining the position of the image constant during zooming, has fine imaging performance despite a large zoom ratio of 2.times. and a speed which is as fast as F/2.8 with an angle of view of 84.degree. on the wide side.

High speed wide angle zoom lens system

A first partial optical system including a first group of lenses having a positive refractive power, a first concave reflection mirror and a second group of lenses having a positive refractive power, for forming a primary reduced image of an object, a second partial optical system including a second concave reelection mirror and a third group of lenses having a positive refractive power, for further reducing the primary reduced image and refocusing it, and a reflection mirror arranged between the first partial optical system and the second partial optical system, for deflecting a light path are arranged in a sequence as viewed from the object. A good image-forming ability as a projection optical system for fabricating a semiconductor device is attained with a simple construction.

Catadioptric reduction projection optical system

A zoom lens comprises a first lens group having the positive refractivity which relatively travels along the optical axis to change the distance between the groups for varying powers, and a second lens group having negative refractivity. The first lens group has sequentially from an object side a first positive lens component, a second negative lens component, a third lens component having positive refractivity, a fourth positive lens component, and fifth lens component having positive refractivity, and the second lens group has sequentially from the object side a sixth positive lens component, a seventh negative lens component, and an eighth negative lens component. Further, the first lens group includes a diaphragm adjacent to the fifth lens component, and the zoom lens is characterized in being structured to satisfy conditions given below.

Compact zoom lens

A spool of a valve main body is switched and driven by exciting a solenoid coil by supplying a DC or AC voltage. An intensity of the magnetism generated by the excitation of the solenoid coil is detected by a magnetic sensor. When a predetermined sensor output is obtained, an indicator lamp is lit to indicate that the spool has operated correctly. The intensity of the magnetism due to the DC excitation is detected by magnetoresistive devices. The intensity of magnetism due to the AC excitation is detected by a pickup coil or a current transformer.

Electromagnetic directional control valve

In a relief valve of the type including a main valve unit incorporating a main valve member (poppet) adapted for engagement with a cylindrical member and a pilot valve unit for controlling a fluid pressure whereby an inlet port of the main valve unit is communicated with a control chamber of the pilot valve unit by an internal pilot passage through a choke formed in a seat member of the pilot valve unit, the choke is formed with an expanded portion having a closed end and through holes for directly communicating the expanded portion with the internal pilot passage and/or the cylindrical member is composed of a unitary-construction member formed with a plurality of flow paths communicated with one another.

Relief valve

A zoom lens comprises a first lens group having a positive refractive power and a second lens group having a negative refractive power sequentially from an object to be photographed. The first lens group comprises an aperture, a front group including at least two lens components having a positive refractive power, and a lens component which has a negative refractive power and an object-side lens surface of which has a concave surface directed toward an object side, and a rear group located nearer to an image than the aperture and including at least one lens component having a positive refractive power. The front group is located nearer to the object than the aperture and has a positive refractive power as a whole. The second lens group comprises at least one lens component having a positive refractive power and at least two lens components having a negative refractive power. A relative distance between the first and second lens groups is changed to perform zooming.

Micro zoom lens

An optical multiplex communication system in which n kinds of digital signals whose logical levels do not simultaneously become true, such as, pulse motor controlling pulses, are multiplexed through a single optical fiber line. The transmitting end generates n kinds of carrier clock signals of different frequencies by clock generating means, produces the respective logical products of the carrier clock signals and the digital signals and then produces a logical sum of the logical product outputs by logical circuits and converts the logical sum output to a light signal by a light transmitter, thereby delivering the light signal onto the single optical fiber line. On the other hand, the receiving end receives and reconverts the light signal to an electric signal by a light receiver, applies the electric signal to n band-pass filters each having a pass band corresponding to the frequency of one of the carrier clock signals to extract the signal according to the frequency, and then detects the filter output by detection circuit means to restore it to the transmitted digital signal.

Growing community of inventors

Tokyo, Japan

Kiyoshi Hayashi