Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Kiyoshi Hashimotodani

Yusuke Kitagawa

Masaya Nakatani

Hiroshi Kagata

Susumu Fukushima

Hiroshi Ushio

Masaya Tamura

Takeki Yamamoto

Takuya Oka

Yoshiki Yamada

Akihiko Takada

Yusuke Nakano

A flow channel device includes a flow channel section and an introduction channel section. The flow channel section includes a flow channel in which a detection object flows and a wall surface surrounding the flow channel. The introduction channel section includes an introduction channel having a first end connected to the flow channel and a second end connected to an introduction port, and a wall surface surrounding the introduction channel. At least a part of the wall surface surrounding the introduction channel is a curved surface protruding toward the introduction channel.

Flow channel device and detection method using same

A sensor device includes a flow path and a metal layer disposed in the flow path. The flow path is configured to allow a sample containing analytes to flow and to allow a carrier to be disposed therein. The carrier has acceptors that are fixed on a surface thereof and specifically bound with the analytes for producing aggregates. The flow path includes an aggregate trapping section at which the analytes locally concentrate to the section. This sensor device has high detection sensitivity with a simple structure.

Sensor device

An optical sensor includes an input part, a fixing part, and a determining part. The input part is provided on the upper side of the sensor. The fixing part on which a carrier is disposed is provided below the input part. The carrier has an acceptor that reacts with an analyte contained in the sample and is fixed on the carrier. The determining part includes a first metal layer, a second metal layer, and a hollow area. The first metal layer is configured to receive an electromagnetic wave. The second metal layer faces the first metal layer. The hollow area is sandwiched between the first metal layer and the second metal layer. The input part, the fixing part, and the hollow area form a part of a passage where the sample flows from the input part to the hollow area.

Optical sensor

A plasmon sensor includes a supporter, a first metal layer on a lower surface of the first supporter, and a second metal layer having an upper surface facing a lower surface of the first metal layer. A hollow space is provided between the first and second metal layers, and is configured to be filled with a test sample containing a medium. The area of the first metal layer is smaller than the area of the upper surface of the supporter. The supporter has a region having hydrophilic property and facing and contacting the hollow space. This the plasmon sensor has a small size and a simple structure.

Plasmon sensor

A sensor chip is a sensor device for measuring a property of a substance by adsorbing the substance on a surface of the sensor chip. The sensor chip includes a diaphragm having a first surface, a second surface, and at least one through hole penetrating from the first surface to the second surface. At least a part of the first surface, the second surface, and an inner wall surface of the through hole is covered with a noncrystalline solid layer including SiOX as a main component, in which substance X is an element having higher electronegativity than that of silicon.

Sensor chip and storage method thereof

With the objective of achieving increased luminous efficiency while suppressing a rise in discharge voltage in a high-definition PDP, a PDP is configured with ribs at intervals between a front plate and a back plate, the ribs partitioning a gap between the front plate and the back plate into spaces. Each space constitutes a discharge cell. A minimum width of a discharge space in the discharge cell is in a range from 65 &#x3bc;m to 100 &#x3bc;m at a position adjacent to a pair of discharge electrodes. A ternary discharge gas of xenon, neon, and helium is enclosed in the discharge space. The partial pressure ratio of xenon in the discharge gas is in a range of 15% to 25%, and the partial pressure ratio of helium is in a range of 20% to 50%. The total pressure of the discharge gas is set between 60 kPa and 70 kPa.

Growing community of inventors

Kyoto, Japan

Kiyoshi Hashimotodani