Kabushiki Kaisha Toshiba

Tokyo Shibaura Denki Kabushiki Kaisha

Kiyoshi Fukuda

Masaru Shimbo

Kazuyoshi Furukawa

Akio Nakagawa

Yoshihiro Yamaguchi

Hiromichi Ohashi

Kiminori Watanabe

Katsujiro Tanzawa

Yoshiaki Ohwada

Katsujirou Tanzawa

Kazuyoshi Furukama

A dielectrically isolated semiconductor wafer substrate includes first and second semiconductive layers bonded to each other by a direct bonding technique in such a manner that an insulative layer is sandwiched therebetween. The first semiconductive layer is a first silicon layer having a (100) or (110) crystal surface orientation, while the second semiconductive layer is a second silicon layer having a (111) crystal surface orientation. Thereafter, a peripheral portion of the resultant substrate is removed, and a substrate of a slightly smaller size is obtained which is provided with an additionally formed new orientation flat.

Dielectrically isolated semiconductor substrate

A method of manufacturing a compound semiconductor device has the steps of mirror-polishing a surface of each of two compound semiconductor substrates, bringing the mirror-polished surfaces of the two compound semiconductor substrates in contact with each other in a clean atmosphere and in a state wherein substantially no foreign substances are present therebetween, and annealing the compound semiconductor substrates which are in contact with each other so as to provide a bonded structure having a junction with excellent electrical characteristics at the interface.

Method of manufacturing compound semiconductor apparatus

A method of bonding two single-crystal silicon bodies comprises the steps of: (i) mirror-polishing the contact surfaces of the bodies to reduce the surface roughness to 500A or less; (ii) removing contaminant from the mirror-polished surfaces; and (iii) bringing the surfaces into mutual contact so that substantially no foreign substance enter the gap between these surfaces.

Method of bonding crystalline silicon bodies

A method of manufacturing a semiconductor substrate having a modified layer therein comprises the steps of mirror-polishing one surface of each of first and second semiconductor plates, forming a modified layer on at least one of the polished surfaces of the first and second semiconductor plates, and bonding the polished surfaces of the first and second semiconductor plates with each other in a clean atmosphere.

Method of manufacturing semiconductor substrate

A glass composition for covering a semiconductor element. The glass composition has excellent resistance to chemicals and excellent electric characteristics. The glass composition includes 3 to 8% by weight of Al.sub.2 O.sub.3, 35 to 45% by weight of SiO.sub.2, 10 to 30% by weight of ZnO, 5 to 30% by weight of PbO, 1 to 10% by weight of B.sub.2 O.sub.3, and more than 5% but not exceeding 20% by weight of an alkaline earth metal oxide selected from the group consisting of MgO, CaO, SrO and BaO, where the maximum contents of MgO, CaO, SrO and BaO are 7% by weight, 3% by weight, 7% by weight, and 15% by weight, respectively.

Growing community of inventors

Yokohama, Japan

Kiyoshi Fukuda