Matsushita Electric Industrial Co., Ltd.

Panasonic Corporation

Kiyoshi Fujihara

Masaya Tateyanagi

Shigeki Okamoto

Yoshihiro Mori

Toshiyuki Fukuda

Masato Ishino

Tooru Aoyagi

Kenichi Ito

Masanori Minamio

Isao Kidoguchi

Masahiro Kume

Tomoaki Uno

Jun Ohya

Masahiro Mitsuda

Yuichi Inaba

Masanori Nishino

Hiroyuki Ishida

Akihiko Murai

Naoki Takenaka

Yuu Hasegawa

Yoshikazu Tamura

Masanori Mimamio

Akiko Nakamura

Takeshi Shimazaki

Shigehisa Oonakahara

A semiconductor device includes: a lead frame; a semiconductor element held by the lead frame; a frame body which is formed on the lead frame to surround the semiconductor element, cover a side surface of the lead frame, and expose a bottom surface of the lead frame; and a protective resin filling a region surrounded by the frame body. The lead frame includes an uneven part formed in a section which is part of an upper surface of the lead frame, and is covered with the frame body.

Semiconductor device

A light distribution controller of a light-emitting device includes a first optical member formed of ZnO disposed over an LED interposing a transparent adhesive, and a second optical member which covers the first optical member. The first optical member includes a first concave portion having an opening in a regular hexagon shape whose area gradually increases. In the first concave portion, inner wall surfaces having inclined surfaces, each of whose bases is formed by one side of the hexagon of the opening shape, are formed. Outside of the first optical member, outer wall surfaces each having a trapezoidal shape are formed. The second optical member includes a second concave portion arranged so that light at an annular peak in the light distribution characteristic of the light traveled through the first optical member is totally reflected.

Light distribution controller, light-emitting device using the same, and method for fabricating light distribution controller

A semiconductor device includes a lead frame, a semiconductor element mounted on the lead frame, and a frame-like member formed on the lead frame, surrounding the semiconductor element, and covering a side surface of the lead frame and exposing a lower surface of the lead frame. The frame-like member has at least one concave portion in a side surface thereof. The concave portion has a ceiling portion located at the same height as or lower than an upper surface of the lead frame, and a bottom portion located higher than the lower surface of the lead frame.

Semiconductor device, lead frame assembly, and method for fabricating the same

A copper frame plate () has a central frame plate () and a pair of side frame plates () bent from both ends of the central frame plate. A flexible substrate () has a central substrate () covering the central frame plate and bent substrates () bent from the central substrate so as to cover the side frame plates. An optical element () is mounted on the central frame plate. A plurality of internal wiring terminals () connected to the optical element are disposed on the central substrate and arranged in the width direction (W) along which the pair of side frame plates are opposed to each other. A plurality of external wiring terminals () used for connection to external equipment are disposed on the bent substrates and arranged in the length direction (L) orthogonal to the width direction.

Optical device and method of manufacturing the same

The semiconductor laser unit includes: a metal plate having a center portion wider than the remaining portions; a flexible substrate having a first opening; a substrate mounted on the center portion; a semiconductor laser placed on the substrate; a frame having a second opening and fixing the flexible substrate in the state of being bent along from the top surface to both side faces of the metal plate; and an optical element covering the second opening. The flexible substrate is fixed so that the first opening extends over the top surface and both side faces of the center portion.

Semiconductor laser unit and optical pickup device

An optical device includes a copper plate, light receiving elements mounted on the copper plate, a light emitting element mounted on the light receiving elements, a flexible substrate bent to cover portions of upper and side surfaces of the copper plate, and a positioning frame of metal for fixing the flexible substrate and the copper plate to each other. Since the positioning frame secures the flexible substrate and the copper plate against movement, a thin optical device can be attained without employing a resin-molded construction.

Optical device, method for fabricating optical device, cap component, and method for forming cap component

The invention provides a semiconductor laser module and an optical transmission system, with which noise caused by light reflected back from a transmission path can be suppressed. The semiconductor laser module, includes a package having a window, a semiconductor laser chip outputting light, a lens that is optically designed such that it couples the light that is output by the semiconductor laser chip into an optical transmission path, an optical isolator that is disposed between the lens and the window, a temperature control mechanism for keeping temperature of these components constant, and a tubular ferrule that is holds and covers the optical transmission path. The semiconductor laser chip, the lens, the optical isolator, and the temperature control mechanism are arranged inside the package. A polarizer is arranged at an end face of the ferrule on the side of the package, such that the polarizer matches a polarization plane of the light that is emitted through the window of the package.

Semiconductor laser module and optical transmission system

A semiconductor laser includes a substrate of a first conductive type, a mesa provided on the substrate and having a multilayered structure including at least a cladding layer of the first conductive type, an active layer and another cladding layer of a second conductive type, a current blocking layer provided on both sides of the mesa, a buried layer of the second conductive type provided on the mesa and the current blocking layer, and a contact layer of the second conductive type provided in a predetermined region on the buried layer. The predetermined region does not include a portion immediately above the mesa.

Semiconductor laser and method for producing the same

The optical fiber amplifier of this invention includes plural pump light sources for emitting pump light; a first wavelength multiplexer for receiving the pump light emitted by the pump light sources at plural input ports and wavelength multiplexing the received pump light, so as to generate wavelength multiplexed pump light and output the wavelength multiplexed pump light from an output port; a second wavelength multiplexer for receiving the wavelength multiplexed pump light at a first input port and receiving signal light at a second input port, so as to generate coupled light by coupling the wavelength multiplexed pump light and the signal light and emit the coupled light from an output port; and a rare earth-doped optical fiber for receiving the coupled light emitted from the output port of the second wavelength multiplexer and amplifying the coupled light. At least one of the pump light sources is a narrow-linewidth light source for emitting light with a laser linewidth of approximately 5 nm or less as the pump light.

Optical fiber amplifier, semiconductor laser module for pumping and

A semiconductor light emitting element includes a p-type electrode which in turn includes a contact electrode layer including at least a Pt layer. Particularly, the semiconductor light emitting element further includes a layered structure including at least an n-type cladding layer, an active layer, and a p-type cladding layer; and a p-type contact layer formed above the layered structure, and the contact electrode layer is formed on the p-type contact layer.

Semiconductor light emitting element with p-type non-alloy electrode

An n-InP buffer layer 102, an InGaAsP active layer 103, a p-InP cladding layer 104 and a p-InGaAsP surface protective layer 105 are successively epitaxially grown on an n-InP substrate 101 having a (100) plane as a main plane. An etching mask 106, an insulating film, is formed in a stripe in the &lt;011&gt; direction by photolithography and dry etching. Using a solution comprising a mixture of hydrochloric acid, oxygenated water and acetic acid, the n-InP buffer layer 102 is etched to a depth lower than the p-InP cladding layer 103, to form a mesa stripe 107. Next, the insulating film 106 is removed and the p-InGaAsP surface protective layer 105 is removed using a solution comprising a mixture of sulfuric acid and oxygenated water. Thereafter, InP current blocking layers 108 and 109 are selectively formed at the regions other than the mesa stripe 107 by the liquid-phase epitaxial growth. Thus, a buried heterostructure semiconductor laser is fabricated, having good laser characteristics and a high reliability.

Growing community of inventors

Shiga, Japan

Kiyoshi Fujihara