Shin-etsu Handotai Co., Ltd.

Other

Kiyoshi Demizu

Shigetoshi Sugawa

Tadahiro Ohmi

Kiyoshi Mitani

Isao Yokokawa

Tadahiro Kato

Akinobu Teramoto

Hideki Yamanaka

Shigeyoshi Netsu

The present invention has been made in order to manufacture a silicon semiconductor substrate used for a semiconductor integrated circuit device, higher in carrier mobility, especially in electron mobility, which is a carrier of an n-type FET, on a {100} plane as a main surface, and provides a silicon semiconductor substrate and a method for manufacturing the same, wherein the conventional RCA cleaning is employed without the use of special cleaning and the surface of the substrate is planarized at an atomic level to thereby decrease the surface roughness thereof without the use of the radical oxidation. The present invention provides a silicon semiconductor substrate comprising: a {110} plane or a plane inclined from a {110} plane as a main surface of the substrate; and steps arranged at an atomic level along a &#x3c;110&#x3e; orientation on the main surface.

Silicon semiconductor substrate and its manufacturing method

The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.

Bonded wafer and method of producing bonded wafer

In order to improve the productivity or production yield of chips in the process for device fabrication, the present invention provides a wafer or an apparatus of process for fabricating semiconductor devices having the backside of the wafer or the surface of a wafer holding means adjusted so as to have a distribution in contact surface density between the surface of the wafer holding means and the backside of the wafer when the semiconductor wafer is held on the wafer holding means in the process for fabricating devices.

Semiconductor wafer and device for semiconductor device manufacturing process

Growing community of inventors

Tokyo, Japan

Kiyoshi Demizu