Mitsubishi Gas Chemical Company, Inc.

Kiyonari Hiramatsu

Yasumasa Norisue

Makoto Miyamoto

Daisuke Ohno

Kenji Ishii

Katsutoshi Yamazaki

Akikazu Amagai

Makoto Yamazaki

Kenzi Ishii

Norio Takeda

Kazushi Shirai

Kenji Ishikura

Yuji Takeda

Yoshio Mukai

Hidemi Hirashima

Katsuhiko Yanagida

A process for producing a phenylene ether oligomer comprising oxidative polymerization of a specific bivalent phenol compound and a specific monovalent phenol compound in an aromatic hydrocarbon solvent, wherein the aromatic hydrocarbon solvent of a phenylene ether oligomer solution obtained after the termination of the polymerization is replaced with a water-soluble organic solvent having a boiling point higher than that of the aromatic hydrocarbon solvent and the resultant phenylene ether oligomer solution is brought into contact with water, thereby precipitating the phenylene ether oligomer as particles.

Process for the production of phenylene ether oligomer

The present invention provides a bifunctional phenylene ether oligomer compound having a thermosetting functional group at each terminal, an epoxy resin containing the above oligomer compound and a use thereof. That is, it provides a sealing epoxy resin composition for sealing an electric part, an epoxy resin composition for laminates, a laminate, a printed wiring board, a curable resin composition and a photosensitive resin composition. The resins and resin compositions of the present invention are used in electronics fields in which a low dielectric constant, a low dielectric loss tangent and high toughness are required and also used for various uses such as coating, bonding and molding.

Cyanate-terminated polyphenylene ether

Carboxylic acid-modified bisphenol epoxy di(meth)acrylate

(Meth)acrylated epoxy-terminated polyphenylene ether

A bifunctional phenylene ether oligomer of the formula (1), obtained by oxidation polymerization of a bivalent phenol of the formula (2) and a monovalent phenol of the formula (3),HO&#x2014;YO&#x2014;X&#x2014;OY&#x2014;OH &#x2003;&#x2003;(1)HO&#x2014;X&#x2014;OH &#x2003;&#x2003;(2)Y&#x2014;OH &#x2003;&#x2003;(3) and Y&#x2014;O&#x2014; is represented by the formula (3), 

Carboxylic acid-modified biphenyl epoxy diacrylate

(Meth)acrylate-terminated polyphenylene ether

A bifunctional phenylene ether oligomer containing monophenylene and biphenylene moieties can be rendered thermosetting by reacting the terminal phenolic hydroxyl groups with a) a cyanogen halide to introduce terminal cyanate groups, b) a halogenated glycidyl to form terminal epoxy groups, or c) an allyl halide to produce allylic terminal groups. The epoxy-terminated phenylene ether oligomer can be further reacted acrylic and/or methacrylic acid to yield an epoxy di(meth)acrylate which can be further modified with a carboxylic acid or anhydride to obtain and acid-modified epoxy di(meth)acrylate.

Di(meth)acrylate of epoxy-terminated polyphenylene ether

Polyphenylene ether oligomer compound, derivatives thereof and use thereof

A bifunctional phenylene ether oligomer of the formula (1), obtained by oxidation polymerization of a bivalent phenol of the formula (2) and a monovalent phenol of the formula (3),  and Y&#x2014;O&#x2014; is represented by the formula (3), 

Bifunctional phenylene ether oligomer, its derivatives, its use and process for the production thereof

A bifunctional phenylene ether oligomer of the formula (1), obtained by oxidation polymerization of a bivalent phenol of the formula (2) and a monovalent phenol of the formula (3),

Bifunctional biphenyl and process for producing bifunctional phenylene ether oligomer compound using the same

A method is used when manufacturing a bismuth-substituted rare-earth iron garnet single crystal (BIG) film by the LPE method. The BIG film is grown on one side of a non-magnetic garnet substrate using a melt that contains flux components and rare-earth oxides. An amount of calcium is added to the melt such that a difference between optical absorption coefficients of the film at a wavelength of 0.78 .mu.m before and after subjecting the film to hydrogen-reduction treatment ranges from 660 to 1430 dB/cm. The film is grown on a non-magnetic garnet substrate having a thickness in the range of 400-600 .mu.m, at a crystal growth temperature of the melt to form a film-substrate structure. The film-substrate structure has a curvature ranging from +0.3 to +0.7 m.sup.-1 at room temperature. The film-substrate structure is subjected to the hydrogen reduction at a temperature ranging from 320 to 400.degree. C. in a hydrogen atmosphere, so that the curvature of the film-substrate structure decreases to a value ranging from -0.1 to +0.1 m.sup.-1.

Method of manufacturing a bismuth-substituted rare-earth iron garnet

A low magnetic saturation type bismuth-substituted rare-earth iron garnet crystal film of the invention is grown on a substrate of (111) garnet single crystal (GdCa)3(GaMgZr)5O12 by using a liquid phase epitaxial method. This single crystal has a lattice constant of 1.2497.+-.0.0002 nm and has a chemical structural formula expressed by

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Tokyo, Japan

Kiyonari Hiramatsu